
MMBTA13
MMBTA14
NPN Darlington
Amplifier Transistor
SOT-23
Suggested Solder
Pad Layout
Features
• Operating And Storage Temperatures –55OC to +150OC
• RθJA is 556OC/W (Mounted on FR-5 PCB 1.0” x0.75” x0.062” )
• Capable of 225mWatts of Power Dissipation
• Marking: MMBTA13 ---K2D; MMBTA14 ---K3D
DIMENSIONS
INCHES MM
DIM MI N MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
Electrical Characteristics @ 25O
C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(I
C=100uAdc, IB=0)
30 Vdc
V(BR)CBO Collector-Base Breakdown Voltage 30 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage 10 Vdc
ICCollector Current-Continuous 300 mAdc
ICBO Collector Cutoff Current
(VCB=30Vdc, IE=0)
100 nAdc
IEBO Emitter Cutoff Current
(VEB=10Vdc, I
C=0)
100 nAdc
ON CHARACTERISTICS
hFE
MMBTA13
MMBTA14
MMBTA13
MMBTA14
DC Current Gain*
(I
C=10mAdc, VCE=5.0Vdc)
(I
C=150mAdc, VCE=1.0Vdc)
5000
10000
10000
20000
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=100mAdc, I
B=0.1mAdc) 1.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=100mAdc,VCE=5.0Vdc) 2.0 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTCurrent Gain-Bandwidth Product
(I
C=10mAdc, VCE=5.0Vdc, f=100MHz) 125 MHz
Cobo Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz) 8.0 pF
Cibo Input Capacitance
(VBE=0.5Vdc, IC
=0, f=1.0MHz) 15 pF
SWITCHING CHARACTERISTICS
td Delay Time (VCC=30Vdc, VBE=0.5Vdc 10 ns
tr Rise Time IC=150mAdc, IB1=15mAdc) 25 ns
ts Storage Time (VCC=30Vdc, I
C=150mAdc 225 ns
tf Fall Time IB1=IB2
=15mAdc) 60 ns
2.000
mm
.800
.035
.900
.950 .037
.950
K
B
C
D
EF
GH
Revision: A 2011/01/01
omponents
20736 Marilla Street Chatsworth
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MCC TM
Micro Commercial Components
E
B
C
www.mccsemi.com
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• Lead Free Finish/RoHS Compliant ("P" Suffix designates
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• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1