MRF6S20010GNR1 - Freescale Semiconductor, Inc.

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement - Mode Lateral MOSFETs

Designed for Class A or Class AB general purpose applications with

frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation

and multipurpose amplifier applications.

•Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ =

130 mA, Pout = 10 Watts PEP

Power Gain — 15.5 dB

Drain Efficiency — 36%

IMD — -34 dBc

•Typical 2 - Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 130 mA,

Pout = 1 Watt Avg., Full Frequency Band (2130-2170 MHz), Channel

Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability

Power Gain — 15.5 dB

Drain Efficiency — 15%

IM3 @ 10 MHz Offset — -47 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -49 dBc in 3.84 MHz Channel Bandwidth

•Typical Single- Carrier N - CDMA Performance: VDD = 28 Volts, IDQ =

130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930-1990 MHz),

IS-95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Band-

width = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 15.5 dB

Drain Efficiency— 16%

ACPR @ 885 kHz Offset = -60 dBc in 30 kHz Bandwidth

•Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout =

4 Watts Avg., Full Frequency Band (1805-1880 MHz)

Power Gain — 16 dB

Drain Efficiency — 33%

EVM — 1.3% rms

•Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW

Output Power

Features

•Characterized with Series Equivalent Large-Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•225°C Capable Plastic Package

•RoHS Compliant

•In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain- Source Voltage VDSS -0.5, +68 Vdc

Gate- Source Voltage VGS -0.5, +12 Vdc

Storage Temperature Range Tstg -65 to +150 °C

Case Operating Temperature TC150 °C

Operating Junction Temperature (1,2) TJ225 °C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

Document Number: MRF6S20010N

Rev. 3, 6/2009

Freescale Semiconductor

Technical Data

1600- 2200 MHz, 10 W, 28 V

GSM, GSM EDGE

SINGLE N-CDMA

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

MRF6S20010NR1

MRF6S20010GNR1

CASE 1265- 09, STYLE 1

TO-270 - 2

PLASTIC

MRF6S20010NR1

CASE 1265A- 03, STYLE 1

TO-270- 2 GULL

PLASTIC

MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

Table 2. Thermal Characteristics

Characteristic Symbol Value (1,2) Unit

Thermal Resistance, Junction to Case

Case Temperature 78°C, 1 W CW

Case Temperature 79°C, 10 W PEP, Two- Tone Test

RθJC

2.5

5.9

°C/W

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22- A114) 1A (Minimum)

Machine Model (per EIA/JESD22- A115) A (Minimum)

Charge Device Model (per JESD22- C101) IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD22- A113, IPC/JEDEC J- STD- 020 3 260 °C

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

IDSS — — 10 µAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS — — 1 µAdc

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS — — 500 µAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 40 µAdc)

VGS(th) 1.5 2.2 3.5 Vdc

Gate Quiescent Voltage

(VDD = 28 Vdc, ID = 130 mAdc, Measured in Functional Test)

VGS(Q) 2 2.8 4 Vdc

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 0.4 Adc)

VDS(on) — 0.33 0.4 Vdc

Dynamic Characteristics (3)

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss — 20 — pF

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss — 11.6 — pF

Input Capacitance

(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Ciss — 120 — pF

Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP, f1 = 2170 MHz,

f2 = 2170.1 MHz, Two- Tone Test

Power Gain Gps 14 15.5 17 dB

Drain Efficiency ηD33 36 — %

Intermodulation Distortion IMD — -34 -28 dBc

Input Return Loss IRL — -15 -9 dB

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

3. Part internally matched on input.

4. Measurement made with device in straight lead configuration before any lead forming operation is applied.

(continued)

MRF6S20010NR1 MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic Symbol Min Typ Max Unit

Typical 2-Carrier W - CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout =

1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2- Carrier W - CDMA, 3.84 MHz Channel Bandwidth

Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset.

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain Gps — 15.5 — dB

Drain Efficiency ηD— 15 — %

Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW GF— 0.3 — dB

Intermodulation Distortion IM3 —-47 — dBc

Adjacent Channel Power Ratio ACPR — -49 — dBc

Typical N-CDMA Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg.,

1930 MHz<Frequency<1990 MHz, Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel

Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF

Power Gain Gps — 15.5 — dB

Drain Efficiency ηD— 16 — %

Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW GF— 0.3 — dB

Adjacent Channel Power Ratio ACPR — -60 — dBc

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg.,

1805- 1880 MHz, EDGE Modulation

Power Gain Gps — 16 — dB

Drain Efficiency ηD— 33 — %

Gain Flatness in 30 MHz Bandwidth @ Pout = 4 W CW GF— 0.3 — dB

Error Vector Magnitude EVM — 1.3 — % rms

Spectral Regrowth at 400 kHz Offset SR1 — -60 — dBc

Spectral Regrowth at 600 kHz Offset SR2 — -70 — dBc

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

Figure 1. MRF6S20010NR1(GNR1) Test Circuit Schematic — 2110- 2170 MHz

Z10 0.930″ x 0.350″ Microstrip

Z11 0.930″ x 0.400″ Microstrip

Z12 0.050″ x 0.105″ Microstrip

Z13 0.405″ x 0.242″ Microstrip

Z14 0.066″ x 0.740″ Microstrip

Z16, Z17 0.050″ x 1.250″ Microstrip

PCB Taconic RF -35, 0.030″, εr = 3.5

Z1, Z15 0.066″ x 0.480″ Microstrip

Z2 0.066″ x 0.765″ Microstrip

Z3, Z5 0.066″ x 0.340″ x 0.050″ Taper

Z4 0.340″ x 0.295″ Microstrip

Z6 0.020″ x 0.060″ Microstrip

Z7 0.0905″ x 0.280″ Microstrip

Z8 0.0905″ x 0.330″ Microstrip

Z9 0.050″ x 0.980″ Microstrip

OUTPUT

VBIAS VSUPPLY

INPUT

DUT

C11

C1 C7

R2 Z9

Z2 Z3 Z4 Z5 Z6 Z7 Z8

Z10

Z16

C3 C4 C5

Z11 Z12 Z13 Z14

Z15

Z17

C8 C9 C10

Table 6. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values — 2110-2170 MHz

Part Description Part Number Manufacturer

C1 100 nF Chip Capacitor CDR33BX104AKYS Kemet

C2, C6 4.7 pF Chip Capacitors ATC100B4R7CT500XT ATC

C3, C7, C8 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC

C4, C5, C9, C10 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata

C11 10 µF, 35 V Tantalum Chip Capacitor T490D106K035AT Kemet

R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay

R2 10 kΩ, 1/4 W Chip Resistor CRCW12061002FKEA Vishay

R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay

MRF6S20010NR1 MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

Figure 2. MRF6S20010NR1(GNR1) Test Circuit Component Layout — 2110- 2170 MHz

CUT OUT AREA

C11

R2 C1

C4 C5

C9 C10

MRF6S20010N, Rev. 2

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

TYPICAL CHARACTERISTICS — 2110-2170 MHz

2210

2050

−40

−5

IRL

Gps

IMD

f, FREQUENCY (MHz)

VDD = 28 Vdc, Pout = 10 W (PEP)

IDQ = 130 mA, 100 kHz Tone Spacing

−10

−15

−20

−25

−30

2130 2170

Figure 3. Two-Tone Wideband Performance

@ Pout = 10 Watts (PEP)

Pout, OUTPUT POWER (WATTS) PEP

IDQ = 195 mA

VDD = 28 Vdc, f = 2170 MHz

Two−Tone Measurements

100 kHz Tone Spacing

10 30

Figure 4. Two-Tone Power Gain versus

Output Power

−60

−10

0.1 1 10

−20

−30

−40

−50

Pout, OUTPUT POWER (WATTS) PEP

Figure 5. Third Order Intermodulation

Distortion versus Output Power

Gps, POWER GAIN (dB)

IRL, INPUT RETURN LOSS (dB)

IMD, INTERMODULATION DISTORTION (dBc)

−70

−10

0.1

7th Order

VDD = 28 Vdc, IDQ = 130 mA

f1 = 2170 MHz, f2 = 2170.1 MHz

Two−Tone Measurements

5th Order

3rd Order

−20

−30

−40

130

Figure 6. Intermodulation Distortion Products

versus Output Power

IMD, INTERMODULATION DISTORTION (dBc)

2090

65 mA

130 mA

−50

−35

0.1

ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)

ηD

97.5 mA

162.5 mA

INTERMODULATION DISTORTION (dBc)

IMD, THIRD ORDER

130 mA

97.5 mA

195 mA

−70

−20

0.1

7th Order

TWO−TONE SPACING (MHz)

VDD = 28 Vdc, Pout = 10 W (PEP)

IDQ = 130 mA, Two−Tone Measurements

(f1 + f2)/2 = Center Frequency of 2170 MHz

5th Order

3rd Order

−30

−40

−50

1 100

Figure 7. Intermodulation Distortion Products

versus Tone Spacing

IMD, INTERMODULATION DISTORTION (dBc)

−60

Pout, OUTPUT POWER (WATTS) PEP

−60

VDD = 28 Vdc, f = 2170 MHz

Two−Tone Measurements

100 kHz Tone Spacing

162.5 mA

IDQ = 65 mA

MRF6S20010NR1 MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS — 2110-2170 MHz

P3dB = 41.5 dBm (14.2 W)

Pin, INPUT POWER (dBm)

VDD = 28 Vdc, IDQ = 130 mA

Pulsed CW, 8 µsec(on), 1 msec(off)

f = 2170 MHz

22 24 26

Actual

Ideal

2820

Figure 8. Pulsed CW Output Power versus

Input Power

Pout, OUTPUT POWER (dBm)

P1dB = 40.9 dBm (12.26 W)

0.1

TC = −30_C

25_C

−30_C

101

Pout, OUTPUT POWER (WATTS) CW

Figure 9. Power Gain and Drain Efficiency

versus CW Output Power

Gps, POWER GAIN (dB)

Gps

85_C

25_C

85_C

VDD = 28 Vdc

IDQ = 130 mA

f = 2170 MHz

ηD

ηD, DRAIN EFFICIENCY (%)

Pout, OUTPUT POWER (WATTS) CW

Figure 10. Power Gain versus Output Power

IDQ = 130 mA

f = 2170 MHz

018

6912

Gps, POWER GAIN (dB)

21153

VDD = 24 V 28 V 32 V

−36

400

−15

S21

f, FREQUENCY (MHz)

Figure 11. Broadband Frequency Response

S11

18 3

0−3

−18

−6

−27 −12

320028002400200016001200800

VDD = 28 Vdc

Pout = 10 W (PEP)

IDQ = 130 mA

S11 (dB)

S21 (dB)

−9

210

108

TJ, JUNCTION TEMPERATURE (°C)

Figure 12. MTTF Factor versus Junction Temperature

107

106

105

190

MTTF FACTOR (HOURS x AMPS2)

170150130110 230 250

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc, Pout = 10 W PEP, and ηD = 36%.

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

W- CDMA TYPICAL CHARACTERISTICS — 2110-2170 MHz

Gps, POWER GAIN (dB)

IRL, INPUT RETURN LOSS (dB)

IM3 (dBc), ACPR (dBc)

−18

−10

−12

−16

22202060

IRL

Gps

ACPR

IM3

f, FREQUENCY (MHz)

Figure 13. 2-Carrier W-CDMA Broadband Performance

@ Pout = 1 Watt Avg.

2200218021602140212021002080

−55

−45

−47

−49

ηD, DRAIN

EFFICIENCY (%)

15.8

15.6

15.4

15.2

14.8

14.6

−51 −14

ηD

VDD = 28 Vdc, Pout = 1 W (Avg.), IDQ = 130 mA

2−Carrier W−CDMA, 10 MHz Carrier Spacing

3.84 MHz Channel Bandwidth, PAR = 8.5 dB

@ 0.01% Probability (CCDF)

14.4

14.2

−53

IM3 (dBc), ACPR (dBc)

Figure 14. 2-Carrier W-CDMA ACPR, IM3, Power Gain

and Drain Efficiency versus Output Power

0−55

Pout, OUTPUT POWER (WATTS) AVG.

49 −20

−30

28 −35

120

−40

IM3

Gps

ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)

−45

ηD

ACPR

0.1

−25

21 TC = 25_C

VDD = 28 Vdc, IDQ = 130 mA

f1 = 2165 MHz, f2 = 2175 MHz

2−Carrier W−CDMA, 10 MHz Carrier

Spacing, 3.84 MHz Channel

Bandwidth, PAR = 8.5 dB

@ 0.01% Probability (CCDF)

7−50

MRF6S20010NR1 MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

W- CDMA TEST SIGNAL

0.0001

100

PEAK−TO−AVERAGE (dB)

Figure 15. CCDF W-CDMA 3GPP, Test Model 1,

64 DPCH, 67% Clipping, Single-Carrier Test Signal

0.1

0.01

0.001

24 68

Figure 16. 2-Carrier W-CDMA Spectrum

f, FREQUENCY (MHz)

3.84 MHz

Channel BW

−IM3 in

3.84 MHz BW

+IM3 in

3.84 MHz BW

−ACPR in

3.84 MHz BW

+ACPR in

3.84 MHz BW

PROBABILITY (%)

(dB)

+20

+30

−10

−40

−50

−60

−70

−80

−20

20515100−5−10−15−20−25 2

−30

W−CDMA. ACPR Measured in 3.84 MHz Channel

Bandwidth @ ±5 MHz Offset. IM3 Measured in

3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =

8.5 dB @ 0.01% Probability on CCDF

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

N- CDMA TYPICAL CHARACTERISTICS — 1930 - 1990 MHz

OUTPUT

VBIAS VSUPPLY

INPUT

DUT

C11

C1 C7

R2 Z7

Z2 Z3 Z4 Z5 Z6

Z17

C3 C4 C5

Z11 Z12 Z13 Z14

Z16

Z18

C8 C9 C10

Z9 Z10 Z15

Figure 17. MRF6S20010NR1(GNR1) Test Circuit Schematic — 1930-1990 MHz

Z11 0.244″ x 0.423″ Microstrip

Z12 0.244″ x 0.066″ x 0.089″ Taper

Z13 0.066″ x 0.182″ Microstrip

Z14 0.066″ x 0.263″ Microstrip

Z15 0.236″ x 0.118″ Microstrip

Z16 0.066″ x 0.099″ Microstrip

Z17, Z18 0.050″ x 1.250″ Microstrip

PCB Taconic RF -35, 0.030″, εr = 3.5

Z1 0.066″ x 0.480″ Microstrip

Z2 0.066″ x 0.728″ Microstrip

Z3 0.354″ x 0.512″ Microstrip

Z4 0.066″ x 0.079″ Microstrip

Z5, Z6 0.591″ x 0.335″ Microstrip

Z7 0.050″ x 0.980″ Microstrip

Z8 1.142″ x 0.350″ Microstrip

Z9 1.142″ x 0.516″ Microstrip

Z10 0.433″ x 0.276″ Microstrip

Table 7. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values — 1930 -1990 MHz

Part Description Part Number Manufacturer

C1 100 nF Chip Capacitor 12065C104KAT AVX

C2, C6 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC

C3, C7, C8 9.1 pF Chip Capacitors ATC100B9R1BT500XT ATC

C4, C5, C9, C10 10 µF Chip Capacitors C5750X5R1H106MT TDK

C11 10 µF, 35 V Tantalum Chip Capacitor TAJD106K035R AVX

R1, R2 10 kΩ, 1/4 W Chip Resistors CRCW12061002FKEA Vishay

R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay

MRF6S20010NR1 MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

N- CDMA TYPICAL CHARACTERISTICS — 1930 - 1990 MHz

Figure 18. MRF6S20010NR1(GNR1) Test Circuit Component Layout — 1930-1990 MHz

MRF6S20010N

Rev 0

CUT OUT AREA

C11

VDD VGS

R2 C1

C4 C5

C9 C10

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

N- CDMA TYPICAL CHARACTERISTICS — 1930 - 1990 MHz

Gps, POWER GAIN (dB)

IRL, INPUT RETURN LOSS (dB)

ACPR (dBc)

−20

−8

−11

−17

20001900

Gps

ACPR

f, FREQUENCY (MHz)

Figure 19. Single-Carrier N-CDMA Broadband Performance

@ Pout = 1 Watt Avg.

1970196019501940193019201910

15.9

−61

−59.4

−59.8

ηD, DRAIN

EFFICIENCY (%)

15.8

15.7

15.6

15.5

15.3

−60.2 −14

14.9

ηD

VDD = 28 Vdc, Pout = 1 W (Avg.), IDQ = 500 mA

N−CDMA IS−95 (Pilot, Sync, Paging, Traffic

Codes 8 Through 13)

15.1

−60.6

15.4

15.2

1980 1990

IRL

−59

ACPR (dBc)

Figure 20. Single-Carrier N-CDMA ACPR and Drain

Efficiency versus Output Power

0−65

Pout, OUTPUT POWER (WATTS) AVG.

50 −40

−50

−55

ηD, DRAIN EFFICIENCY (%)

ηD

ACPR

0.1

−45

VDD = 28 Vdc, IDQ = 130 mA

f = 1960 MHz, N−CDMA IS−95

(Pilot, Sync, Paging, Traffic Codes

8 Through 13)

10 −60

MRF6S20010NR1 MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

N- CDMA TEST SIGNAL

0.0001

100

PEAK−TO−AVERAGE (dB)

Figure 21. Single-Carrier CCDF N-CDMA

0.1

0.01

0.001

2468

IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8

Through 13) 1.2288 MHz Channel Bandwidth

Carriers. ACPR Measured in 30 kHz Bandwidth @

±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability

on CCDF.

PROBABILITY (%)

.....

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−60

−110

−10

(dB)

−20

−30

−40

−50

−70

−80

−90

−100

+ACPR in 30 kHz

Integrated BW

1.2288 MHz

Channel BW

2.90.7 2.21.50−0.7−1.5−2.2−2.9−3.6 3.6

f, FREQUENCY (MHz)

Figure 22. Single-Carrier N-CDMA Spectrum

−ACPR in 30 kHz

Integrated BW

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

GSM EDGE TYPICAL CHARACTERISTICS — 1805-1880 MHz

OUTPUT

VBIAS VSUPPLY

INPUT

DUT

C11

C1 C7

R2 Z9

Z2 Z3 Z4 Z5 Z8

Z10

Z17

C3 C4 C5

Z11 Z12 Z13 Z14

Z16

Z18

C8 C9 C10

Z15

Figure 23. MRF6S20010NR1(GNR1) Test Circuit Schematic — 1805-1880 MHz

Z10 1.142″ x 0.350″ Microstrip

Z11 1.142″ x 0.516″ Microstrip

Z12 0.433″ x 0.276″ Microstrip

Z13 0.276″ x 0.157″ Microstrip

Z14 0.236″ x 0.433″ Microstrip

Z15 0.066″ x 0.104″ Microstrip

Z17, Z18 0.050″ x 1.250″ Microstrip

PCB Taconic RF -35, 0.030″, εr = 3.5

Z1, Z16 0.066″ x 0.480″ Microstrip

Z2 0.066″ x 0.137″ Microstrip

Z3 0.236″ x 0.236″ Microstrip

Z4 0.066″ x 0.354″ Microstrip

Z5 0.551″ x 0.512″ Microstrip

Z6 0.066″ x 0.079″ Microstrip

Z7 0.591″ x 0.189″ Microstrip

Z8 0.591″ x 0.334″ Microstrip

Z9 0.050″ x 0.980″ Microstrip

Z7Z6

Table 8. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values —1805 -1880 MHz

Part Description Part Number Manufacturer

C1 100 nF Chip Capacitor 12065C104KAT AVX

C2, C6 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC

C3, C7, C8 9.1 pF Chip Capacitors ATC100B9R1BT500XT ATC

C4, C5, C9, C10 10 µF Chip Capacitors C5750X5R1H106MT TDK

C11 10 µF, 35 V Tantalum Chip Capacitor TAJD106K035R AVX

R1, R2 10 kΩ, 1/4 W Chip Resistors CRCW12061001FKEA Vishay

R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay

MRF6S20010NR1 MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

GSM EDGE TYPICAL CHARACTERISTICS — 1805-1880 MHz

Figure 24. MRF6S20010NR1(GNR1) Test Circuit Component Layout — 1805-1880 MHz

MRF6S20010N

Rev. 0

CUT OUT AREA

C11

VDD VGS

R2 C1

C4 C5

C9 C10

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

GSM EDGE TYPICAL CHARACTERISTICS — 1805-1880 MHz

Gps, POWER GAIN (dB)

IRL, INPUT RETURN LOSS (dB)

f, FREQUENCY (MHz)

1800

Gps

VDD = 28 Vdc

IDQ = 130 mA

17 50

16 40

15 30

14 20

1900

IRL

Figure 25. Power Gain, Input Return Loss and Drain

Efficiency versus Frequency @ Pout = 4 Watts

−30

−10

−20

−40

ηD

ηD, DRAIN EFFICIENCY (%)

1810 1820 1830 1840 1850 1860 1870 1880 1890

Figure 26. Error Vector Magnitude and Drain

Efficiency versus Output Power

Pout, OUTPUT POWER (WATTS) AVG.

VDD = 28 Vdc

IDQ = 130 mA

f = 1840 MHz

10.1

EVM

ηD

ηD, DRAIN EFFICIENCY (%)

EVM, ERROR VECTOR MAGNITUDE (% ms)

−80

−50

0.1

Pout, OUTPUT POWER (WATTS)

−55

−60

−65

−70

−75

VDD = 28 Vdc

IDQ = 130 mA

f = 1840 MHz

Figure 27. Spectral Regrowth at 400 kHz and

600 kHz versus Output Power

SPECTRAL REGROWTH (dBc)

SR @ 400 kHz

SR @ 600 kHz

Figure 28. EDGE Spectrum

−10

−20

−30

−40

−50

−60

−70

−80

−90

−100

200 kHz Span 2 MHzCenter 1.96 GHz

−110

400 kHz

600 kHz

400 kHz

600 kHz

(dB)

Reference Power VBW = 30 kHz

Sweep Time = 70 ms

RBW = 30 kHz

GSM EDGE TEST SIGNAL

MRF6S20010NR1 MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

Figure 29. Series Equivalent Source and Load Impedance

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Zsource Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 1880 MHz

Zo = 25 Ω

Zload Zsource

MHz

Zsource

Ω

Zload

Ω

1805

1840

1880

13.237 + j5.810

14.858 + j6.279

13.953 + j6.084

2.445 + j3.698

2.542 + j3.942

2.695 + j4.170

VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg.

1800 MHz

MHz

Zsource

Ω

Zload

Ω

2110

2140

2170

3.619 + j0.792

4.087 + j0.558

3.918 + j0.797

2.544 + j3.068

2.673 + j3.291

2.818 + j3.406

VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP

2170 MHz

MHz

Zsource

Ω

Zload

Ω

1930

1960

1990

9.237 + j1.849

9.889 + j2.434

9.521 + j2.144

2.770 + j3.497

2.754 + j3.668

2.772 + j3.833

VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg.

1900 MHz

f = 1805 MHz

f = 1880 MHz

f = 1930 MHz

f = 1990 MHz

Zload

Zsource

Zo = 25 Ω

f = 1990 MHz

f = 1930 MHz

f = 2110 MHz

Zsource

Zload

f = 2170 MHz

f = 2110 MHz

Zo = 25 Ω

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

Table 9. Common Source Scattering Parameters (VDD = 28 V, IDQ = 126 mA, TA = 25°C, 50 ohm system)

S11 S21 S12 S22

MHz |S11|∠φ |S21|∠φ |S12|∠φ |S22|∠φ

500 0.984 -178.1 1.195 42.42 0.001 - 129.1 0.875 -116.3

550 0.986 -179.0 0.947 40.48 0.001 - 159.2 0.892 - 121.6

600 0.985 179.9 0.747 39.66 0.001 147.4 0.905 - 125.9

650 0.986 178.9 0.581 39.89 0.001 119.1 0.913 -129.9

700 0.982 177.9 0.446 41.80 0.001 108.1 0.927 - 133.4

750 0.983 177.2 0.336 46.70 0.002 102.9 0.935 - 136.4

800 0.983 176.5 0.248 56.02 0.002 96.99 0.941 - 139.5

850 0.979 175.5 0.188 72.74 0.003 97.40 0.947 - 141.9

900 0.980 174.8 0.168 96.69 0.003 94.63 0.951 - 144.4

950 0.977 174.0 0.183 119.3 0.004 91.92 0.955 - 146.6

1000 0.978 173.2 0.223 134.3 0.004 92.80 0.960 - 148.6

1050 0.972 172.4 0.276 142.2 0.004 89.92 0.962 - 150.5

1100 0.972 171.4 0.335 146.4 0.005 89.90 0.966 - 152.2

1150 0.963 170.8 0.396 148.5 0.005 87.51 0.977 - 153.7

1200 0.964 169.9 0.461 148.8 0.006 89.25 0.971 - 155.2

1250 0.956 169.0 0.531 148.2 0.007 86.98 0.977 - 156.8

1300 0.948 167.8 0.604 146.9 0.007 85.08 0.982 - 157.9

1350 0.939 167.0 0.685 144.8 0.008 82.40 0.986 - 159.5

1400 0.927 165.7 0.772 142.2 0.008 79.69 0.988 - 160.7

1450 0.910 164.5 0.869 138.7 0.009 77.79 0.994 - 162.1

1500 0.889 163.2 0.975 134.7 0.010 75.79 0.991 - 163.4

1550 0.861 161.9 1.093 129.7 0.010 72.86 0.993 - 164.7

1600 0.821 160.9 1.221 123.8 0.011 69.89 0.996 -166.0

1650 0.780 160.1 1.356 116.7 0.012 63.71 0.984 -167.4

1700 0.722 160.6 1.491 108.3 0.013 57.70 0.985 - 168.5

1750 0.666 162.5 1.606 98.77 0.014 49.85 0.977 - 169.6

1800 0.618 167.0 1.687 88.09 0.014 41.19 0.970 - 170.8

1850 0.603 173.3 1.706 76.98 0.013 32.65 0.958 - 171.3

1900 0.614 179.7 1.673 66.08 0.012 25.40 0.954 - 171.9

1950 0.654 - 175.6 1.591 55.96 0.011 20.73 0.945 - 172.3

2000 0.701 - 173.5 1.484 47.04 0.010 15.11 0.947 - 172.6

2050 0.747 - 172.7 1.364 39.29 0.008 10.13 0.947 - 173.0

2100 0.783 - 172.6 1.242 32.87 0.006 6.333 0.945 - 173.6

2150 0.816 - 172.9 1.136 27.69 0.004 15.63 0.944 - 173.9

2200 0.842 - 173.6 1.042 23.26 0.004 42.20 0.944 - 174.2

2250 0.864 - 174.2 0.961 19.26 0.005 57.76 0.948 - 174.6

2300 0.882 - 175.0 0.888 15.75 0.006 62.56 0.948 - 175.2

2350 0.894 - 175.7 0.822 12.69 0.008 59.72 0.949 - 175.7

2400 0.906 - 176.4 0.764 9.857 0.009 49.09 0.951 - 176.1

2450 0.910 - 176.9 0.712 7.587 0.008 39.24 0.955 - 176.5

(continued)

MRF6S20010NR1 MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

Table 9. Common Source Scattering Parameters (VDD = 28 V, IDQ = 126 mA, TA = 25°C, 50 ohm system) (continued)

S11 S21 S12 S22

MHz |S11|∠φ |S21|∠φ |S12|∠φ |S22|∠φ

2500 0.923 - 177.5 0.666 5.462 0.006 42.56 0.957 -177.2

2550 0.927 - 178.0 0.625 3.680 0.006 52.25 0.962 -177.8

2600 0.937 - 178.8 0.591 1.864 0.006 60.26 0.961 -178.4

2650 0.937 - 179.0 0.559 0.237 0.007 64.14 0.964 -179.1

2700 0.942 - 179.8 0.529 -1.378 0.007 65.62 0.964 -179.6

2750 0.945 - 179.9 0.504 -2.768 0.007 64.71 0.964 179.7

2800 0.946 179.5 0.479 - 4.088 0.007 67.58 0.966 179.4

2850 0.950 179.3 0.456 - 5.412 0.007 75.44 0.966 178.8

2900 0.949 178.8 0.436 - 6.305 0.008 82.04 0.964 178.3

2950 0.952 178.5 0.419 - 7.279 0.009 83.60 0.967 177.9

3000 0.950 178.4 0.402 - 8.087 0.011 83.41 0.968 177.4

3050 0.958 177.9 0.387 - 9.138 0.012 81.35 0.964 176.8

3100 0.953 177.7 0.373 - 9.904 0.013 77.45 0.969 176.4

3150 0.957 177.2 0.362 - 10.86 0.014 70.98 0.970 176.2

3200 0.960 177.4 0.350 -11.79 0.013 67.00 0.970 175.5

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

PACKAGE DIMENSIONS

MRF6S20010NR1 MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE

Refer to the following documents to aid your design process.

Application Notes

•AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

•AN1955: Thermal Measurement Methodology of RF Power Amplifiers

•AN3789: Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletins

•EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

•Electromigration MTTF Calculator

•RF High Power Model

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the

Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

2Dec. 2008 •Changed Storage Temperature Range in Max Ratings table from - 65 to +175 to - 65 to +150 for

standardization across products, p. 1

•Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1

•Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related

“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C

in Capable Plastic Package bullet, p. 1

•Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2

•Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,

Dynamic Characteristics table, p. 2

•Updated Part Numbers in Tables 6, 7, 8, Component Designations and Values, to RoHS compliant part

numbers, p. 4, 10, 14

•Adjusted scale for Fig. 7, Intermodulation Distortion Products versus Tone Spacing, to better match the

device’s capabilities, p. 6

•Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture

limitations, p. 7

•Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device, p. 7

•Removed ALT1 definition from Fig. 21, Single -Carrier CCDF N- CDMA, given no supporting performance

information provided, p. 13

•Replaced Case Outline 1265- 08 with 1265 - 09, Issue K, p. 1, 20 - 22. Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min- Max .290 - .320 to .290 Min; E3 changed from Min - Max .150-.180 to .150 Min). Added JEDEC

Standard Package Number.

•Replaced Case Outline 1265A- 02 with 1265A - 03, Issue C, p. 1, 23 - 25. Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min- Max .290 - .320 to .290 Min; E3

changed from Min- Max .150 - .180 to .150 Min). Added pin numbers. Corrected mm dimension L for

gull-wing foot from 4.90 - 5.06 Min - Max to 0.46 -0.61 Min- Max. Added JEDEC Standard Package Number.

•Added Product Documentation and Revision History, p. 26

3June 2009 •Corrected decimal placement for Ciss (changed 0.12 pF to 120 pF) and Coss (changed 0.02 pF to 20 pF),

Dynamic Characteristics table, p. 2

•Added footnote, Measurement made with device in straight lead configuration before any lead forming

operation is applied, to Functional Tests table, p. 2.

•Added AN3789, Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation, Application Notes, p. 26

•Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 26

MRF6S20010NR1 MRF6S20010GNR1

RF Device Data

Freescale Semiconductor

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Document Number: MRF6S20010N

Rev. 3, 6/2009