S-809xxC Series www.sii-ic.com ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 (c) Seiko Instruments Inc., 2001-2010 The S-809xxC Series is a high-precision voltage detector developed using CMOS process. The detection voltage is fixed internally with an accuracy of 2.0 %. A time delayed reset can be accomplished with the addition of an external capacitor. Two output forms, Nch open-drain and CMOS output, are available. Features * Ultra-low current consumption * * * * * * 1.0 A typ. (Detection voltage 1.4 V, at VDD=2.0 V) 1.1 A typ. (Detection voltage 1.5 V, at VDD=3.5 V) High-precision detection voltage 2.0 % Operating voltage range 0.7 V to 10.0 V Hysteresis characteristics 5 % typ. Detection voltage 1.3 V to 6.0 V (0.1 V step) Output forms Nch open-drain output (Active Low) CMOS output (Active Low) Lead-free, Sn 100%, halogen-free*1 *1. Refer to " Product Name Structure" for details. Applications * Power supply monitor for portable equipment such as notebook PCs, digital still cameras, PDAs and cellular phones * Constant voltage power monitor for cameras, video equipment and communication equipment * Power monitor and reset for CPUs and microcomputers Packages * SC-82AB * SOT-23-5 * SNT-4A Seiko Instruments Inc. 1 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series Block Diagrams 1. Nch Open-drain Output Products VDD + *1 - Delay circuit OUT *1 *1 VREF VSS CD *1. Parasitic diode Figure 1 2. CMOS Output Products VDD *1 *1 + - Delay circuit OUT *1 *1 VREF VSS CD *1. Parasitic diode Figure 2 2 Seiko Instruments Inc. ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series Product Name Structure The detection voltage, output form and packages for S-809xxC Series can be selected at the user's request. Refer to the "1. Product Name" for the construction of the product name, "2. Package" regarding the package drawings and "3. Product Name List" for the full product names. 1. Product Name S - 809xx C x xx - xxx xx x Environmental code U: Lead-free (Sn 100%), halogen-free G: Lead-free (for details, please contact our sales office) IC direction in tape specifications*1 T2: SC-82AB, SOT-23-5 TF: SNT-4A Product code*2 Package code NB: SC-82AB MC: SOT-23-5 PF: SNT-4A Output form N: Nch open-drain output (Active Low) L: CMOS output (Active Low) Detection voltage value 13 to 60 (e.g. When the detection voltage is 1.3 V, it is expressed as 13.) *1. Refer to the taping specifications at the end of this book. *2. Refer to the Table 1 to 2 in the "3. Product Name List" 2. Package Package name Package SC-82AB NP004-A-P-SD SOT-23-5 SNT-4A MP005-A-P-SD PF004-A-P-SD Drawing code Tape Reel NP004-A-C-SD NP004-A-R-SD NP004-A-C-S1 MP005-A-C-SD MP005-A-R-SD PF004-A-C-SD PF004-A-R-SD Seiko Instruments Inc. Land -- -- PF004-A-L-SD 3 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series 3. Product Name List 3-1. Nch Open-drain Output Products Table 1 Detection voltage Hysteresis SC-82AB SOT-23-5 SNT-4A range width (Typ.) 1.3 V 2.0 % 0.065 V S-80913CNNB-G8HT2x S-80913CNMC-G8HT2x S-80913CNPF-G8HTFx 1.4 V 2.0 % 0.070 V S-80914CNNB-G8JT2x S-80914CNMC-G8JT2x S-80914CNPF-G8JTFx 1.5 V 2.0 % 0.075 V S-80915CNNB-G8KT2x S-80915CNMC-G8KT2x S-80915CNPF-G8KTFx 1.6 V 2.0 % 0.080 V S-80916CNNB-G8LT2x S-80916CNMC-G8LT2x S-80916CNPF-G8LTFx 1.7 V 2.0 % 0.085 V S-80917CNNB-G8MT2x S-80917CNMC-G8MT2x S-80917CNPF-G8MTFx 1.8 V 2.0 % 0.090 V S-80918CNNB-G8NT2x S-80918CNMC-G8NT2x S-80918CNPF-G8NTFx 1.9 V 2.0 % 0.095 V S-80919CNNB-G8PT2x S-80919CNMC-G8PT2x S-80919CNPF-G8PTFx 2.0 V 2.0 % 0.100 V S-80920CNNB-G8QT2x S-80920CNMC-G8QT2x S-80920CNPF-G8QTFx 2.1 V 2.0 % 0.105 V S-80921CNNB-G8RT2x S-80921CNMC-G8RT2x S-80921CNPF-G8RTFx 2.2 V 2.0 % 0.110 V S-80922CNNB-G8ST2x S-80922CNMC-G8ST2x S-80922CNPF-G8STFx 2.3 V2.0 % 0.115 V S-80923CNNB-G8TT2x S-80923CNMC-G8TT2x S-80923CNPF-G8TTFx 2.4 V 2.0 % 0.120 V S-80924CNNB-G8UT2x S-80924CNMC-G8UT2x S-80924CNPF-G8UTFx 2.5 V 2.0 % 0.125 V S-80925CNNB-G8VT2x S-80925CNMC-G8VT2x S-80925CNPF-G8VTFx 2.6 V 2.0 % 0.130 V S-80926CNNB-G8WT2x S-80926CNMC-G8WT2x S-80926CNPF-G8WTFx 2.7 V 2.0 % 0.135 V S-80927CNNB-G8XT2x S-80927CNMC-G8XT2x S-80927CNPF-G8XTFx 2.8 V 2.0 % 0.140 V S-80928CNNB-G8YT2x S-80928CNMC-G8YT2x S-80928CNPF-G8YTFx 2.9 V 2.0 % 0.145 V S-80929CNNB-G8ZT2x S-80929CNMC-G8ZT2x S-80929CNPF-G8ZTFx 3.0 V 2.0 % 0.150 V S-80930CNNB-G80T2x S-80930CNMC-G80T2x S-80930CNPF-G80TFx 3.1 V 2.0 % 0.155 V S-80931CNNB-G81T2x S-80931CNMC-G81T2x S-80931CNPF-G81TFx 3.2 V 2.0 % 0.160 V S-80932CNNB-G82T2x S-80932CNMC-G82T2x S-80932CNPF-G82TFx 3.3 V 2.0 % 0.165 V S-80933CNNB-G83T2x S-80933CNMC-G83T2x S-80933CNPF-G83TFx 3.4 V 2.0 % 0.170 V S-80934CNNB-G84T2x S-80934CNMC-G84T2x S-80934CNPF-G84TFx 3.5 V 2.0 % 0.175 V S-80935CNNB-G85T2x S-80935CNMC-G85T2x S-80935CNPF-G85TFx 3.6 V 2.0 % 0.180 V S-80936CNNB-G86T2x S-80936CNMC-G86T2x S-80936CNPF-G86TFx 3.7 V 2.0 % 0.185 V S-80937CNNB-G87T2x S-80937CNMC-G87T2x S-80937CNPF-G87TFx 3.8 V 2.0 % 0.190 V S-80938CNNB-G88T2x S-80938CNMC-G88T2x S-80938CNPF-G88TFx 3.9 V 2.0 % 0.195 V S-80939CNNB-G89T2x S-80939CNMC-G89T2x S-80939CNPF-G89TFx 4.0 V 2.0 % 0.200 V S-80940CNNB-G9AT2x S-80940CNMC-G9AT2x S-80940CNPF-G9ATFx 4.1 V 2.0 % 0.205 V S-80941CNNB-G9BT2x S-80941CNMC-G9BT2x S-80941CNPF-G9BTFx 4.2 V 2.0 % 0.210 V S-80942CNNB-G9CT2x S-80942CNMC-G9CT2x S-80942CNPF-G9CTFx 4.3 V 2.0 % 0.215 V S-80943CNNB-G9DT2x S-80943CNMC-G9DT2x S-80943CNPF-G9DTFx 4.4 V 2.0 % 0.220 V S-80944CNNB-G9ET2x S-80944CNMC-G9ET2x S-80944CNPF-G9ETFx 4.5 V 2.0 % 0.225 V S-80945CNNB-G9FT2x S-80945CNMC-G9FT2x S-80945CNPF-G9FTFx 4.6 V 2.0 % 0.230 V S-80946CNNB-G9GT2x S-80946CNMC-G9GT2x S-80946CNPF-G9GTFx 4.7 V 2.0 % 0.235 V S-80947CNNB-G9HT2x S-80947CNMC-G9HT2x S-80947CNPF-G9HTFx 4.8 V 2.0 % 0.240 V S-80948CNNB-G9JT2x S-80948CNMC-G9JT2x S-80948CNPF-G9JTFx 4.9 V 2.0 % 0.245 V S-80949CNNB-G9KT2x S-80949CNMC-G9KT2x S-80949CNPF-G9KTFx 5.0 V 2.0 % 0.250 V S-80950CNNB-G9LT2x S-80950CNMC-G9LT2x S-80950CNPF-G9LTFx 5.1 V2.0 % 0.255 V S-80951CNNB-G9MT2x S-80951CNMC-G9MT2x S-80951CNPF-G9MTFx 5.2 V 2.0 % 0.260 V S-80952CNNB-G9NT2x S-80952CNMC-G9NT2x S-80952CNPF-G9NTFx 5.3 V 2.0 % 0.265 V S-80953CNNB-G9PT2x S-80953CNMC-G9PT2x S-80953CNPF-G9PTFx 5.4 V 2.0 % 0.270 V S-80954CNNB-G9QT2x S-80954CNMC-G9QT2x S-80954CNPF-G9QTFx 5.5 V 2.0 % 0.275 V S-80955CNNB-G9RT2x S-80955CNMC-G9RT2x S-80955CNPF-G9RTFx 5.6 V 2.0 % 0.280 V S-80956CNNB-G9ST2x S-80956CNMC-G9ST2x S-80956CNPF-G9STFx 5.7V 2.0 % 0.285 V S-80957CNNB-G9TT2x S-80957CNMC-G9TT2x S-80957CNPF-G9TTFx 5.8 V 2.0 % 0.290 V S-80958CNNB-G9UT2x S-80958CNMC-G9UT2x S-80958CNPF-G9UTFx 5.9 V 2.0 % 0.295 V S-80959CNNB-G9VT2x S-80959CNMC-G9VT2x S-80959CNPF-G9VTFx 6.0 V 2.0 % 0.300 V S-80960CNNB-G9WT2x S-80960CNMC-G9WT2x S-80960CNPF-G9WTFx Remark 1. x: G or U 2. Please select products of environmental code = U for Sn 100%, halogen-free products. 4 Seiko Instruments Inc. ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series 3-2. CMOS Output Products Table 2 Detection voltage Hysteresis SC-82AB SOT-23-5 SNT-4A range width (Typ.) 1.3 V 2.0 % 0.065 V S-80913CLNB-G6HT2x S-80913CLMC-G6HT2x S-80913CLPF-G6HTFx 1.4 V 2.0 % 0.070 V S-80914CLNB-G6JT2x S-80914CLMC-G6JT2x S-80914CLPF-G6JTFx 1.5 V 2.0 % 0.075 V S-80915CLNB-G6KT2x S-80915CLMC-G6KT2x S-80915CLPF-G6KTFx 1.6 V 2.0 % 0.080 V S-80916CLNB-G6LT2x S-80916CLMC-G6LT2x S-80916CLPF-G6LTFx 1.7 V 2.0 % 0.085 V S-80917CLNB-G6MT2x S-80917CLMC-G6MT2x S-80917CLPF-G6MTFx 1.8 V 2.0 % 0.090 V S-80918CLNB-G6NT2x S-80918CLMC-G6NT2x S-80918CLPF-G6NTFx 1.9 V 2.0 % 0.095 V S-80919CLNB-G6PT2x S-80919CLMC-G6PT2x S-80919CLPF-G6PTFx 2.0 V 2.0 % 0.100 V S-80920CLNB-G6QT2x S-80920CLMC-G6QT2x S-80920CLPF-G6QTFx 2.1 V 2.0 % 0.105 V S-80921CLNB-G6RT2x S-80921CLMC-G6RT2x S-80921CLPF-G6RTFx 2.2 V 2.0 % 0.110 V S-80922CLNB-G6ST2x S-80922CLMC-G6ST2x S-80922CLPF-G6STFx 2.3 V 2.0 % 0.115 V S-80923CLNB-G6TT2x S-80923CLMC-G6TT2x S-80923CLPF-G6TTFx 2.4 V 2.0 % 0.120 V S-80924CLNB-G6UT2x S-80924CLMC-G6UT2x S-80924CLPF-G6UTFx 2.5 V 2.0 % 0.125 V S-80925CLNB-G6VT2x S-80925CLMC-G6VT2x S-80925CLPF-G6VTFx 2.6 V 2.0 % 0.130 V S-80926CLNB-G6WT2x S-80926CLMC-G6WT2x S-80926CLPF-G6WTFx 2.7 V 2.0 % 0.135 V S-80927CLNB-G6XT2x S-80927CLMC-G6XT2x S-80927CLPF-G6XTFx 2.8 V 2.0 % 0.140 V S-80928CLNB-G6YT2x S-80928CLMC-G6YT2x S-80928CLPF-G6YTFx 2.9 V 2.0 % 0.145 V S-80929CLNB-G6ZT2x S-80929CLMC-G6ZT2x S-80929CLPF-G6ZTFx 3.0 V 2.0 % 0.150 V S-80930CLNB-G60T2x S-80930CLMC-G60T2x S-80930CLPF-G60TFx 3.1 V 2.0 % 0.155 V S-80931CLNB-G61T2x S-80931CLMC-G61T2x S-80931CLPF-G61TFx 3.2 V 2.0 % 0.160 V S-80932CLNB-G62T2x S-80932CLMC-G62T2x S-80932CLPF-G62TFx 3.3 V 2.0 % 0.165 V S-80933CLNB-G63T2x S-80933CLMC-G63T2x S-80933CLPF-G63TFx 3.4 V 2.0 % 0.170 V S-80934CLNB-G64T2x S-80934CLMC-G64T2x S-80934CLPF-G64TFx 3.5 V 2.0 % 0.175 V S-80935CLNB-G65T2x S-80935CLMC-G65T2x S-80935CLPF-G65TFx 3.6 V 2.0 % 0.180 V S-80936CLNB-G66T2x S-80936CLMC-G66T2x S-80936CLPF-G66TFx 3.7 V 2.0 % 0.185 V S-80937CLNB-G67T2x S-80937CLMC-G67T2x S-80937CLPF-G67TFx 3.8 V 2.0 % 0.190 V S-80938CLNB-G68T2x S-80938CLMC-G68T2x S-80938CLPF-G68TFx 3.9 V 2.0 % 0.195 V S-80939CLNB-G69T2x S-80939CLMC-G69T2x S-80939CLPF-G69TFx 4.0 V 2.0 % 0.200 V S-80940CLNB-G7AT2x S-80940CLMC-G7AT2x S-80940CLPF-G7ATFx 4.1 V 2.0 % 0.205 V S-80941CLNB-G7BT2x S-80941CLMC-G7BT2x S-80941CLPF-G7BTFx 4.2 V2.0 % 0.210 V S-80942CLNB-G7CT2x S-80942CLMC-G7CT2x S-80942CLPF-G7CTFx 4.3 V 2.0 % 0.215 V S-80943CLNB-G7DT2x S-80943CLMC-G7DT2x S-80943CLPF-G7DTFx 4.4 V 2.0 % 0.220 V S-80944CLNB-G7ET2x S-80944CLMC-G7ET2x S-80944CLPF-G7ETFx 4.5 V 2.0 % 0.225 V S-80945CLNB-G7FT2x S-80945CLMC-G7FT2x S-80945CLPF-G7FTFx 4.6 V 2.0 % 0.230 V S-80946CLNB-G7GT2x S-80946CLMC-G7GT2x S-80946CLPF-G7GTFx 4.7 V 2.0 % 0.235 V S-80947CLNB-G7HT2x S-80947CLMC-G7HT2x S-80947CLPF-G7HTFx 4.8 V 2.0 % 0.240 V S-80948CLNB-G7JT2x S-80948CLMC-G7JT2x S-80948CLPF-G7JTFx 4.9 V 2.0 % 0.245 V S-80949CLNB-G7KT2x S-80949CLMC-G7KT2x S-80949CLPF-G7KTFx 5.0 V 2.0 % 0.250 V S-80950CLNB-G7LT2x S-80950CLMC-G7LT2x S-80950CLPF-G7LTFx 5.1 V 2.0 % 0.255 V S-80951CLNB-G7MT2x S-80951CLMC-G7MT2x S-80951CLPF-G7MTFx 5.2 V 2.0 % 0.260 V S-80952CLNB-G7NT2x S-80952CLMC-G7NT2x S-80952CLPF-G7NTFx 5.3 V 2.0 % 0.265 V S-80953CLNB-G7PT2x S-80953CLMC-G7PT2x S-80953CLPF-G7PTFx 5.4 V 2.0 % 0.270 V S-80954CLNB-G7QT2x S-80954CLMC-G7QT2x S-80954CLPF-G7QTFx 5.5 V 2.0 % 0.275 V S-80955CLNB-G7RT2x S-80955CLMC-G7RT2x S-80955CLPF-G7RTFx 5.6 V 2.0 % 0.280 V S-80956CLNB-G7ST2x S-80956CLMC-G7ST2x S-80956CLPF-G7STFx 5.7 V 2.0 % 0.285 V S-80957CLNB-G7TT2x S-80957CLMC-G7TT2x S-80957CLPF-G7TTFx 5.8 V 2.0 % 0.290 V S-80958CLNB-G7UT2x S-80958CLMC-G7UT2x S-80958CLPF-G7UTFx 5.9 V 2.0 % 0.295 V S-80959CLNB-G7VT2x S-80959CLMC-G7VT2x S-80959CLPF-G7VTFx 6.0 V 2.0 % 0.300 V S-80960CLNB-G7WT2x S-80960CLMC-G7WT2x S-80960CLPF-G7WTFx Remark 1. x: G or U 2. Please select products of environmental code = U for Sn 100%, halogen-free products. Seiko Instruments Inc. 5 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series Pin Configurations Table 3 SC-82AB Top view 4 3 1 Pin No. 1 2 3 4 Symbol VSS VDD CD OUT Description GND pin Voltage input pin Connection pin for delay capacitor Voltage detection output pin 2 Figure 3 Table 4 SOT-23-5 Top view 5 1 Pin No. Symbol Description 1 OUT Voltage detection output pin 2 VDD Voltage input pin 3 VSS GND pin 4 NC*1 No connection 5 CD Connection pin for delay capacitor *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. 4 2 3 Figure 4 Table 5 SNT-4A Top view 1 4 2 3 Pin No. 1 2 3 4 Symbol VSS OUT CD VDD Figure 5 6 Seiko Instruments Inc. Description GND pin Voltage detection output pin Connection pin for delay capacitor Voltage input pin ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series Absolute Maximum Ratings Table 6 Item Power supply voltage CD pin input voltage Output Nch open-drain output products voltage CMOS output products Output current Power SC-82AB dissipation SOT-23-5 (Ta=25C unless otherwise specified) Absolute maximum ratings Unit 12 V VSS-0.3 to VDD+0.3 VSS -0.3 to VSS+12 Symbol VDD-VSS VCD VOUT IOUT PD SNT-4A Operating ambient temperature Topr Storage temperature Tstg *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm x 76.2 mm x t1.6 mm (2) Board name: JEDEC STANDARD51-7 VSS-0.3 to VDD+0.3 50 150 (When not mounted on board) 350*1 250 (When not mounted on board) 600*1 140 (When not mounted on board) 300*1 -40 to +85 -40 to +125 mA mW C Power Dissipation (PD) [mW] Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. 700 600 SOT-23-5 500 SC-82AB 400 300 200 SNT-4A 100 0 0 100 150 50 Ambient Temperature (Ta) [C] Figure 6 Power Dissipation of Package (When Mounted on Board) Seiko Instruments Inc. 7 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series Electrical Characteristics 1. Nch Open-drain Output Products Table 7 Item Symbol Condition Detection voltage*1 -VDET -- Hysteresis width VHYS S-80913 to 14 S-80915 to 60 Current consumption ISS VDD=2.0 V VDD=3.5 V VDD=4.5 V VDD=6.0 V VDD=7.5 V Operating voltage VDD Output current IOUT -- Output transistor VDD=0.95 V Nch, VDS=0.5 V S-80913 to 14 VDD=1.2 V S-80915 to 60 VDD=2.4 V S-80927 to 60 Output transistor, Nch, VDS=10.0 V, VDD=10.0 V VDD=2.0 V CD=4.7 nF S-80913 to 14 VDD=3.5 V S-80915 to 26 VDD=4.5 V S-80927 to 39 VDD=6.0 V S-80940 to 54 VDD=7.5 V S-80955 to 60 Leakage current Delay time ILEAK tD S-80913 to 14 S-80915 to 26 S-80927 to 39 S-80940 to 54 S-80955 to 60 (Ta=25C unless otherwise specified) Test Min. Typ. Max. Unit circuit -VDET(S) -VDET(S) -VDET(S) V 1 x0.98 x1.02 -VDET -VDET -VDET x0.03 x0.05 x0.08 -VDET -VDET -VDET x0.03 x0.05 x0.07 -- 1.0 2.5 2 A -- 1.1 2.8 -- 1.2 3.0 -- 1.3 3.3 -- 1.4 3.5 0.7 -- 10.0 V 1 0.23 0. 64 -- mA 0.59 1.36 -- 2.88 4.98 -- -- -- 0.1 A 2.7 3.6 4.5 ms 20 27 34 3 4 - VDET ppm/ -- 1 Ta=-40C to +85C 100 350 C Ta * - VDET *1. -VDET: Actual detection voltage, -VDET(S): Specified detection voltage (The center value of detection voltage range in Detection voltage temperature coefficient*2 Table 1.) *2. The temperature change ratio in the detection voltage [mV/C] is calculated by using the following quation. - VDET [mV/ C]*1 = -VDET (Typ.) [V ]*2 x - VDET [ppm/ C]*3 / 1000 Ta Ta * - VDET *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient 8 Seiko Instruments Inc. ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series 2. CMOS Output Products Table 8 Item Symbol Condition Detection voltage*1 -VDET -- Hysteresis width VHYS S-80913 to 14 S-80915 to 60 Current consumption ISS VDD=2.0 V VDD=3.5 V VDD=4.5 V VDD=6.0 V VDD=7.5 V Operating voltage VDD Output current IOUT -- Output transistor, VDD=0.95 V Nch, VDS=0.5 V S-80913 to 14 VDD=1.2 V S-80915 to 60 VDD=2.4 V S-80927 to 60 Output transistor, VDD=4.8 V Pch, VDS=0.5 V S-80913 to 39 VDD=6.0 V S-80940 to 54 VDD=8.4 V S-80955 to 60 VDD=2.0 V CD=4.7 nF S-80913 to 14 VDD=3.5 V S-80915 to 26 VDD=4.5 V S-80927 to 39 VDD=6.0 V S-80940 to 54 VDD=7.5 V S-80955 to 60 Delay time tD S-80913 to 14 S-80915 to 26 S-80927 to 39 S-80940 to 54 S-80955 to 60 (Ta=25C unless otherwise specified) Test Min. Typ. Max. Unit circuit -VDET(S) -VDET(S) -VDET(S) V 1 x0.98 x1.02 -VDET -VDET -VDET x0.03 x0.05 x0.08 -VDET -VDET -VDET x0.03 x0.05 x0.07 1.0 -- 2.5 2 A 1.1 -- 2.8 1.2 -- 3.0 1.3 -- 3.3 1.4 -- 3.5 0.7 -- 10.0 V 1 0.23 0.64 -- 0.59 1.36 -- 2.88 4.98 -- 1.43 2.39 -- 1.68 2.78 -- 2.08 3.42 -- 2.7 3.6 4.5 18 24 30 mA 3 5 ms 4 - VDET ppm/ Detection voltage -- 1 100 350 Ta=-40C to +85C C temperature coefficient *2 Ta * - VDET *1. -VDET: Actual detection voltage, -VDET(S): Specified detection voltage (The center value of detection voltage range in Table 2.) *2. The temperature change ratio in the detection voltage [mV/C] is calculated by using the following equation. - VDET [mV/ C]*1 = -VDET (Typ.) [V ]*2 x - VDET [ppm/ C]*3 / 1000 Ta Ta * - VDET *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient Seiko Instruments Inc. 9 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series Test Circuits 2. 1. A VDD VDD V *1 R 100 k S-809xxC OUT Series VSS CD VDD VDD S-809xxC OUT Series V VSS *1. R is unnecessary for CMOS output products. CD Figure 8 Figure 7 4. 3. VDD V *1 VDD VDD S-809xxC OUT Series VSS CD A VDS P.G. V S-809xxC OUT Series VSS CD Figure 10 5. VDS V VDD V S-809xxC OUT Series VSS A CD Figure 11 10 Oscilloscope *1. R is unnecessary for CMOS output products. Figure 9 VDD R 100 k Seiko Instruments Inc. ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series Timing Chart 1. Nch Open-drain Output Products VDD Release voltage (+VDET) Detection voltage (-VDET) Hysteresis width (VHYS) Minimum operating voltage VSS R 100 k VDD CD OUT VSS VDD V Output from the OUT pin VSS tD Figure 12 2. CMOS Output Products VDD Release voltage (+VDET) Detection voltage (-VDET) Hysteresis width (VHYS) Minimum operating voltage VSS VDD CD OUT VSS V VDD Output from the OUT pin VSS tD Remark For values of VDD less than minimum operating voltage, values of OUT pin output is free of the shaded region. Figure 13 Seiko Instruments Inc. 11 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series Operation 1. Basic Operation: CMOS Output (Active Low) 1-1. When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the Nch transistor N1 in (RB + RC) * VDD Figure 14 is OFF, the comparator input voltage is . RA + RB + RC 1-2. When the VDD goes below +VDET, the output provides the VDD level, as long as the VDD remains above the detection voltage -VDET. When the VDD falls below -VDET (point A in Figure 15), the Nch transistor becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At this time the Nch transistor N1 in Figure 14 becomes ON, the comparator input voltage is changed to RB * VDD . RA + RB 1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to the VDD when the output is pulled up to the VDD. 1-4. The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still appears even when the VDD surpasses -VDET, as long as it does not exceed the release voltage +VDET. 1-5. When VDD rises above +VDET (point B in Figure 15), the Nch transistor becomes OFF, and the Pch transistor becomes ON, and VDD appears at the output after the delay time (tD) counted by the delay circuit. VDD *1 RA *1 + Pch Delay circuit - OUT *1 RB VREF Nch *1 RC VSS N1 CD CD *1. Parasitic diode Figure 14 Operation 1 12 Seiko Instruments Inc. ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series (1) (2) (3) (4) (5) VDD B Hysteresis width (VHYS) Release volatage (+VDET) Detection voltage (-VDET) A Minimum operating voltage VSS VDD Output from OUT pin VSS tD Figure 15 Operation 2 2. Delay Circuit The delay circuit delays the output signal from the time at which the power voltage (VDD) exceeds the release voltage (+VDET) when VDD is turned on. The output signal is not delayed when the VDD goes below the detection voltage (-VDET) (Refer to Figure 15). The delay time (tD) is determined by the time constant of the built-in constant current (approx. 100 nA ) and the attached external capacitor (CD), and calculated from the following equation. tD (ms)=Delay coefficientxCD (nF) Delay coefficient: (25C) Detection voltage -VDET 1.4 V Min. 0.57, Typ. 0.77, Max. 0.96 Detection voltage -VDET 1.5 V Nch open-drain output products: Min. 4.3, Typ. 5.7, Max. 7.2 CMOS output products: Min. 3.8, Typ. 5.1, Max. 6.4 Caution 1. When the CD pin is open, a double pulse shown in Figure 16 may appear at release. To avoid the double pulse, attach 20 pF or larger capacitor to the CD pin. Do not apply voltage to the CD pin. VOUT time Figure 16 2. Print circuit board layout should be made in such a way that no current flows into or flows from the CD pin since the impedance of the CD pin is high, otherwise correct delay time cannot be provided. 3. There is no limit for the capacitance of the external capacitor (CD) as long as the leakage current of the capacitor can be ignored against the built-in constant current value. Leakage current causes deviation in delay time. When the leakage current is larger than the built-in constant current, no release takes place. Seiko Instruments Inc. 13 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series 3. Other characteristics 3-1. Temperature Characteristic of Detection Voltage The shaded area in Figure 17 shows the temperature characteristics of the detection voltage. -VDET [V] +0.945mV/C -VDET25*1 -0.945 mV/C -40 25 85 Ta [C] *1. -VDET25 is an actual detection voltage value at 25 C. Figure 17 Temperature Characteristic of Detection Voltage (Example forS-80927C) 3-2. Temperature Characteristics of Release Voltage + VDET for the release voltage is calculated by the temperature Ta - VDET coefficient of the detection voltage as follows: Ta + VDET + VDET - VDET = x Ta - VDET Ta The temperature coefficients for the release voltage and the detection voltage have the same sign consequently. The temperature coefficient 3-3. Temperature Characteristics of Hysteresis Voltage The temperature characteristics for the hysteresis voltage is expressed as calculated as follows: + VDET - VDET V - VDET - = HYS x Ta Ta - VDET Ta 14 Seiko Instruments Inc. + VDET - VDET - and is Ta Ta ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series Standard Circuit *1 R 100 k VDD CD CD *2 OUT VSS *1. R is unnecessary for CMOS output products. *2. The delay capacitor (CD) should be connected directly to the CD pin and to the VSS pin. Figure 18 Caution The above connection diagram and constant will not guarantees successful operation. Perform through evaluation using the actual application to set the constant. Technical Terms 1. Detection Voltage (-VDET), Release Voltage (+VDET) The detection voltage (-VDET) is a voltage at which the output turns to low. This detection voltage varies slightly among products of the same specification. The variation of detection voltage between the specified minimum (-VDET) Min. and maximum (-VDET) Max. is called the detection voltage range (Refer to Figure 19). Example: For the S-80927CN, detection voltage lies in the range of 2.646(-VDET) 2.754. This means that some S-80927CNs have 2.646 V for -VDET and some have 2.754 V. The release voltage (+VDET) is a voltage at which the output turns to high. This release voltage varies slightly among products of the same specification. The variation of release voltage between the specified minimum (+VDET) Min. and maximum (+VDET) Max. is called the release voltage range (Refer to Figure 20). The range is calculated from the actual detection voltage (-VDET) of a product and is expressed by -VDETx1.03+VDET-VDETx1.08 for S-80913 to S-80914, and by -VDETx1.03+VDET-VDET x1.07 for S80915 to S-80960. Example: For the S-80927CN, the release voltage lies in the range of 2.725(+VDET) 2.947. This means that some S-80927CNs have 2.725 V for +VDET and some have 2.947 V. Seiko Instruments Inc. 15 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series VDD VDD Detection voltage Release voltage (+VDET) Max. (-VDET) Max. Detection voltage range (-VDET) Min. Release voltage range (+VDET) Min. OUT OUT Delay time Figure 19 Detection Voltage (CMOS output products) Figure 20 Release Voltage (CMOS output products) Remark Although the detection voltage and release voltage overlap in the range of 2.725 V to 2.754 V, +VDET is always larger than -VDET. 2. Hysteresis Width (VHYS) Hysteresis width is the voltage difference between the detection voltage and the release voltage (The voltage at point B-The voltage at point A=VHYS in Figure 15). The existence of the hysteresis width avoids malfunction caused by noise on input signal. 3. Delay Time (tD) Delay time is a time internally measured from the instant at which input voltage to the VDD pin exceeds the release voltage (+VDET) to the point at which the output of the OUT pin inverts. The delay time changes according to the external capacitor (CD). V VDD +VDET OUT tD Figure 21 4. Through-type Current The through-type current refers to the current that flows instantaneously at the time of detection and release of a voltage detector. The through-type current is large in CMOS output products, and small in Nch open-drain output products. 16 Seiko Instruments Inc. ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series 5. Oscillation In applications where a resistor is connected to the voltage detector input (Figure 22), taking a CMOS active low product for example, the through-type current, which is generated when the output goes from low to high (release) causes a voltage drop equal to [through-type current] x [input resistance] across the resistor. When the input voltage drops below the detection voltage (-VDET) as a result, the output voltage goes to low level. In this state, the through-type current stops and its resultant voltage drop disappears, and the output goes from low to high. The through-type current again generated, a voltage drop appears, and repeatiing the process finally induces oscillation. VDD RA VIN S-809xxCL OUT RB VSS Figure 22 Example for Bad Implementation of Input Voltage Divider (CMOS Output Products) Precautions * Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. * In CMOS output products of the S-809xxC series, the through-type current flows at the detection and the release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type current during releasing. * When designing for mass production using an application circuit described herein, the product deviation and temperature characteristics should be taken into consideration. SII shall not bear any responsibility for the patents on the circuits described herein. * SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the products including this IC upon patents owned by a third party. Seiko Instruments Inc. 17 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series Characteristics (Typical Data) 1. Detection Voltage (VDET) - Temperature (Ta) S-80914CN S-80913CN 1.50 1.60 1.45 1.55 +V DET VDET(V) 1.45 1.35 1.40 1.30 -VDET 1.25 -VDET 1.35 1.30 1.20 -40 -20 0 20 Ta (C) 40 60 -40 80 -20 0 20 40 60 80 40 60 80 40 60 80 40 60 80 Ta (C) S-80960CN S-80915CN 1.60 6.40 1.55 6.30 +VDET +VDET 6.20 VDET(V) VDET (V) +V DET 1.50 VDET(V) 1.40 1.50 1.45 -V DET 6.10 6.00 -V DET 5.90 1.40 -40 -20 0 20 Ta (C) 40 60 5.80 80 -40 -20 0 20 Ta (C) 2. Hysteresis Voltage Width (VHYS) - Temperature (Ta) S-80914CN 8 8 7 7 6 6 VHYS (%) V HYS (%) S-80913CN 5 4 4 3 3 -40 -20 0 20 Ta (C) 40 60 -20 0 20 Ta (C) S-80960CN 8 8 7 7 V HYS (%) V HYS (%) -40 80 S-80915CN 6 5 4 6 5 4 -40 18 5 -20 0 20 Ta (C) 40 60 80 -40 Seiko Instruments Inc. -20 0 20 Ta (C) ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series 3. Current Consumption (ISS) - Input Voltage (VDD) S-80913CL 3.0 S-80914CL 3.0 16 A 2.5 2.0 1.5 1.0 0.5 Ta=25C 18 A 2.5 ISS ( A) ISS ( A) Ta=25C 2.0 1.5 1.0 0.5 0.0 0.0 0 2 4 6 8 10 12 0 2 4 VDD (V) S-80915CL 3.0 1.5 1.0 13 A 1.5 1.0 0.5 0.0 0.0 4 6 12 2.0 0.5 2 10 Ta=25C 3.0 2.5 2.0 0 8 S-80960CL ISS (A) ISS ( A) Ta=25C 3.4 A 2.5 6 VDD (V) 8 10 0 12 2 4 6 8 10 12 VDD (V) VDD (V) 4. Current Consumption (ISS) - Temperature (Ta) S-80913CN VDD =2.0V 2.0 S-80914CN 1.5 1.5 ISS ( A) ISS ( A) VDD =2.0V 2.0 1.0 0.5 1.0 0.5 0.0 0.0 -40 -20 0 20 40 60 80 -40 -20 0 Ta (C) S-80915CN VDD =3.5V 2.0 40 S-80960CN 60 80 VDD =7.5V 2.0 1.5 1.5 ISS ( A) ISS ( A) 20 Ta (C) 1.0 0.5 1.0 0.5 0.0 0.0 -40 -20 0 20 40 60 80 -40 Ta (C) -20 0 20 40 60 80 Ta (C) Seiko Instruments Inc. 19 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series 5. Nch Transistor Output Current (IOUT) - VDS S-80915CL Ta=25C Ta=25C 25 45 40 35 30 25 20 15 10 5 0 6.0V 8.4V 20 4.8V IOUT (mA) IOUT(mA) S-80960CL/CN 6. Pch Transistor Output Current (IOUT) - VDS 3.6V 7.2V 15 6.0V 10 2.4V 4.8V 3.6V 5 VDD=1.2V VDD =2.4V 0 0 1 2 3 4 VDS (V) 0 5 2 4 6 8 V DS (V) 10 7. Nch Transistor Output Current (IOUT) - Input Voltage(VDD) S-80914CL/CN S-80960CL VDS=0.5V Ta=-40C 3.0 2.5 IOUT (mA) 25C IOUT (mA) Ta=-40C 20 2.0 1.5 1.0 25C 15 10 5 85C 0.5 VDS=0.5V 25 3.5 85C 0 0.0 0 0.5 1 1.5 VDD (V) 0 2 2 4 6 8 V DD (V) 10 8. Pch Transistor Output Current (IOUT) - Input Voltage(VDD) S-80913CL VDS=0.5V 6 2.5 2.0 25C 1.5 1.0 0.5 0 0.5 1 1.5 2 VDD (V) 2.5 4 3 2 25C 85C 1 85C 0.0 Ta=-40C 5 Ta=-40C IOUT (mA) IOUT (mA) S-80915CL VDS=0.5V 3.0 0 3 0 2 4 6 8 VDD (V) 10 12 9. Minimum Operating Voltage - Input Voltage(VDD) S-80913CN Pull-up VDD: 100k 2.0 S-80915CN 1.5 Ta=-40C VOUT(V) VOUT(V) 1.5 1.0 25C 0.5 85C Ta=-40C 1.0 25C 0.5 85C 0.0 0.0 0 20 Pull-up VDD: 100k 2.0 0.5 1 VDD (V) 1.5 2 0 Seiko Instruments Inc. 0.5 1 V DD (V) 1.5 2 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series 10. Dynamic Response - COUT (CD pin; open) S-80913CL Ta=25C S-80913CN Response time (ms) Response time (ms) tpHL 0.1 0.01 tpLH 0.001 0.00001 0.0001 0.001 0.01 tpLH 1 tpHL 0.1 0.01 0.00001 0.0001 0.1 S-80914CL Ta=25C 0.1 Response time (ms) Response time (ms) Ta=25C tpHL 0.01 tpLH 0.001 0.001 0.01 0.1 tpLH 1 S-80915CL tpHL 0.1 0.01 0.00001 0.0001 Load capacitance (F) 0.001 0.01 0.1 Load capacitance (F) Ta=25C S-80915CN Ta=25C 10 1 tpHL Response time (ms) Response time (ms) 0.1 10 0.00001 0.0001 0.1 0.01 tpLH tpLH 1 tpHL 0.1 0.01 0.001 0.0001 0.001 0.01 0.00001 0.1 S-80960CL 0.0001 0.001 0.01 0.1 Load capacitance (F) Load capacitance (F) Ta=25C S-80960CN Ta=25C 10 1 tpHL Response time (ms) Response time (ms) 0.01 S-80914CN 1 0.1 tpLH 0.01 tpLH 1 tpHL 0.1 0.01 0.001 0.00001 0.001 Load capacitance (F) Load capacitance (F) 0.00001 Ta=25C 10 1 0.0001 0.001 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 Load capacitance (F) Load capacitance (F) Seiko Instruments Inc. 21 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series 1 s 1 s VIH VDD V Input voltage *2 VIL tpHL *1 VDD *1 tpLH VDD OUT S-809xxC Series VSS R 100 k CD COUT V VDDx90 % Output voltage VDDx10 % *1. VIH=10 V *2. VIL=0.7 V *1. R is unnecessary for CMOS output products. Figure 23 Measurement Condition for Response Time Figure 24 Measurement Circuit for Response Time Caution The above connection diagram and constant will not guarantees successful operation. Perform through evaluation using the actual application to set the constant. 11. Delay Time - CD Pin Capacitance(CD) ( No output pin capacitance) S-80913CN Ta=25C 1000 S-80915CN 10 100 td (ms) 1000 td (ms) 100 1 Ta=25C 10000 10 0.1 1 0.01 0.1 0.01 0.1 1 10 100 CD (nF) 1000 0.01 0.1 1 10 CD (nF) 100 1000 12. Delay Time - Temperature(Ta) S-80913CN CD=4.7(nF) 40 6 30 4 CD=4.7(nF) 50 8 2 20 10 0 -40 -20 0 20 Ta (C) 22 S-80915CN td (ms) td (ms) 10 40 60 80 0 -40 -20 0 20 Ta (C) Seiko Instruments Inc. 40 60 80 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series 1 s VIH*1 VDD VDD Input voltage VIL *2 S-809 V tD Ouput voltage OUT Series VSS VDDx90 % R 100 k CD CD V VSS *1. VIH=10V *2. VIL=0.7V Figure 25 Measuring Conditions of Delay Time Figure 26 Measurement Circuit for Delay Time Caution The above connection diagram and constant will not guarantees successful operation. Perform through evaluation using the actual application to set the constant. Application Circuit Examples 1. Microcomputer Reset Circuits If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may be performed or the contents of the memory register may be lost. When power supply voltage returns to normal, the microcomputer needs to be initialized before normal operations can be done. Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered. Reset circuits shown in Figures 27 to 28 can be easily constructed with the help of the S-809xxC Series that has a low operating voltage, a high-precision detection voltage, hysteresis and the reset circuits. VDD1 VDD2 VDD S-809xxCN S-809xxCL Microcomputer Microcomputer VSS VSS Only for Nch open-drain products. Figure 27 Example for Reset Circuits(S-809xxCL) Figure 28 Example for Reset Circuits(S-809xxCN) Caution The above connection diagram and constant will not guarantees successful operation. Perform through evaluation using the actual application to set the constant. Seiko Instruments Inc. 23 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.4.0_00 S-809xxC Series 2. Change of Detection Voltage In Nch open-drain output products of the S-809xxC Series, detection voltage can be changed using resistance dividers or diodes as shown in Figures 29 to 30. In Figure 29, hysteresis width also changes. VDD VDD RA Vf1 *1 (RA75 k) S809xxCN VIN RB + - Vf2 OUT (Only for Nch open-drain products) VSS RA + RB * - VDET RB RA + RB Hysteresis width = * VHYS RB Detection voltage = VIN S809xxCN OUT (Only for Nch open-drain products) VSS Detection voltage=Vf1+Vf2+(-VDET) *1. RA should be 75 k or less tp prevent oscillation. Caution If RA and RB are large, the hysteresis width may also be larger than the value given by the above equation due to through- type current (which flows slightly in an Nch open-drain products). Figure 29 Figure 30 Caution The above connection diagram and constant will not guarantees successful operation. Perform through evaluation using the actual application to set the constant. 24 Seiko Instruments Inc. 2.00.2 1.30.2 4 3 0.05 +0.1 0.3 -0.05 +0.1 0.16 -0.06 2 1 +0.1 0.4 -0.05 No. NP004-A-P-SD-1.1 TITLE SC82AB-A-PKG Dimensions NP004-A-P-SD-1.1 No. SCALE UNIT mm Seiko Instruments Inc. +0.1 o1.5 -0 4.00.1 2.00.05 1.10.1 4.00.1 0.20.05 o1.050.1 (0.7) 2.20.2 2 1 3 4 Feed direction No. NP004-A-C-SD-3.0 TITLE SC82AB-A-Carrier Tape No. NP004-A-C-SD-3.0 SCALE UNIT mm Seiko Instruments Inc. 4.00.1 2.00.1 o1.5 1.10.1 +0.1 -0 4.00.1 0.20.05 o1.050.1 2.30.15 2 1 3 4 Feed direction No. NP004-A-C-S1-2.0 TITLE SC82AB-A-Carrier Tape No. NP004-A-C-S1-2.0 SCALE UNIT mm Seiko Instruments Inc. 12.5max. 9.00.3 Enlarged drawing in the central part o130.2 (60) (60) No. NP004-A-R-SD-1.1 TITLE SC82AB-A-Reel No. NP004-A-R-SD-1.1 QTY. SCALE UNIT mm Seiko Instruments Inc. 3,000 2.90.2 1.90.2 4 5 1 2 +0.1 0.16 -0.06 3 0.950.1 0.40.1 No. MP005-A-P-SD-1.2 TITLE No. SOT235-A-PKG Dimensions MP005-A-P-SD-1.2 SCALE UNIT mm Seiko Instruments Inc. 4.00.1(10 pitches:40.00.2) +0.1 o1.5 -0 2.00.05 +0.2 o1.0 -0 0.250.1 4.00.1 1.40.2 3.20.2 3 2 1 4 5 Feed direction No. MP005-A-C-SD-2.1 TITLE SOT235-A-Carrier Tape No. MP005-A-C-SD-2.1 SCALE UNIT mm Seiko Instruments Inc. 12.5max. 9.00.3 Enlarged drawing in the central part o130.2 (60) (60) No. MP005-A-R-SD-1.1 SOT235-A-Reel TITLE No. MP005-A-R-SD-1.1 SCALE QTY. UNIT mm Seiko Instruments Inc. 3,000 1.20.04 3 4 +0.05 0.08 -0.02 2 1 0.65 0.480.02 0.20.05 No. PF004-A-P-SD-4.0 TITLE SNT-4A-A-PKG Dimensions PF004-A-P-SD-4.0 No. SCALE UNIT mm Seiko Instruments Inc. +0.1 o1.5 -0 4.00.1 2.00.05 0.250.05 +0.1 5 1.450.1 2 1 3 4 o0.5 -0 4.00.1 0.650.05 Feed direction No. PF004-A-C-SD-1.0 TITLE SNT-4A-A-Carrier Tape PF004-A-C-SD-1.0 No. SCALE UNIT mm Seiko Instruments Inc. 12.5max. 9.00.3 Enlarged drawing in the central part o130.2 (60) (60) No. PF004-A-R-SD-1.0 SNT-4A-A-Reel TITLE PF004-A-R-SD-1.0 No. SCALE UNIT QTY. mm Seiko Instruments Inc. 5,000 0.52 2 1.16 0.52 0.35 1. 2. 0.3 1 (0.25 mm min. / 0.30 mm typ.) (1.10 mm ~ 1.20 mm) 0.03 mm 1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.). 2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm). Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package. 2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm or less from the land pattern surface. 3. Match the mask aperture size and aperture position with the land pattern. 4. Refer to "SNT Package User's Guide" for details. 1. 1. (0.25 mm min. / 0.30 mm typ.) 2. (1.10 mm ~ 1.20 mm) 2. 1. 2. () 0.03 mm 3. 4. "SNT" TITLE SNT-4A-A-Land Recommendation PF004-A-L-SD-4.0 No. No. PF004-A-L-SD-4.0 SCALE UNIT mm Seiko Instruments Inc. www.sii-ic.com * * The information described herein is subject to change without notice. * When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. * Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. * The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, vehicle equipment, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior written permission of Seiko Instruments Inc. * * The products described herein are not designed to be radiation-proof. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.