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2N5550 — NPN Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5550 Rev. 1.4
February 2015
2N5550
NPN Epitaxial Silicon Transistor
Features
Amplifier Transistor
Collector-Emitter Voltage: VCEO = 140 V
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
2N5550BU 2N5550 TO-92 3L Bulk
2N5550TA 2N5550 TO-92 3L Ammo
2N5550TAR 2N5550 TO-92 3L Ammo
2N5550TF 2N5550 TO-92 3L Tape and Reel
2N5550TFR 2N5550 TO-92 3L Tape and Reel
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 160 V
VCEO Collector-Emitter Voltage 140 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 600 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 to 150 °C
1. Emitter 2. Base 3. Collector
TO-92
1
2N5550 — NPN Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5550 Rev. 1.4 2
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
2. Pulse test: pulse width 300 μs, duty cycle 2%
Symbol Parameter Max. Unit
PDTotal Device Dissipation 625 mW
Derate Above 25°C5.0mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 200 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 160 V
BVCEO Collector-Emitter Breakdown Voltage(2) IC = 1 mA, IB = 0 140 V
BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6 V
ICBO Collector Cut-Of f Curren t VCB = 100 V, IE = 0 100 nA
IEBO Emitter Cut-Off Current VEB = 4 V, IC = 0 50 nA
hFE DC Current Gain(2) IC = 1 mA, VCE = 5 V 60
IC = 10 mA, VCE = 5 V 60 250
IC = 50 mA, VCE = 5 V 20
VCE(sat) Collector-Emitter Saturation Voltage(2) IC = 10 mA, IB = 1 mA 0.15 V
IC = 50 mA, IB = 5 mA 0.25
VBE(sat) Base-Emitter Saturation Voltage(2) IC = 10 mA, IB = 1 mA 1.0 V
IC = 50 mA, IB = 5 mA 1.2
fTCurrent Gain Bandwidth Product IC = 10 mA, VCE = 10 V
f = 100 MHz 100 300 MHz
Cob Output Capacitance VCB = 10 V, IE = 0,
f = 1 MHz 6pF
NF Noise Figure IC = 250 μA, VCE = 5 V,
RS = 1 kΩ,f = 10 Hz to
15.7 kHz 10 dB
2N5550 — NPN Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5550 Rev. 1.4 3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs.
Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current Figure 4. Base-Emitter On Voltage vs .
Collector Current
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature Figure 6. Input and Output Capacitance vs.
Reverse Voltage
1 10 100 1000
0
50
100
150
200
250 125oC
100oC
75oC
-40oC
25oC
VCE=5V
hFE- DC CURRENT GAIN
IC- COLLECTOR CURRENT [mA]
1 10 100
0.01
0.1
1
10 ?10
125oC
100oC
75oC
-40oC25oC
VCE(SAT)- COLLECTOR-EMITTER VOLTAGE [V]
IC- COLLECTOR CURRENT [mA]
110100
0.2
0.4
0.6
0.8
1.0
125oC
100oC
75oC
-40oC
25oC
VBE(SAT)- BASE-EMITTER VOLTAGE [V]
IC- COLLECTOR CURRENT [mA]
1 10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TA = 125oCTA = 100oC
TA = 75oC
TA = -40oC
TA = 25oC
VBE(ON)- BASE-EMITTER VOLTAGE [V]
IC- COLLECTOR CURRENT [mA]
25 50 75 100 125
1
10
50
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
°
V = 10 0V
CB
012345678910
1
10
100
COB
CIB
CAPACITANCE [pF]
REVERSE BIAS VOLTAGE [V]
2N5550 — NPN Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5550 Rev. 1.4 4
Typical Performance Characteristics (Continued)
Figure 7. Collector- Emitter Breakdown Voltage
with Resistance between Emitter-Base Figure 8. Small Signal Current Gain vs.
Collector Current
Figure 9. Power Dissipation vs.
Ambient Temperature
0.1 1 10 100 1000
160
180
200
220
240
260
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
I = 1.0 mA
C
11050
0
4
8
12
16
I - COLLECTOR CURRENT (mA)
h - SMALL SIGNAL CURRENT GAIN
C
FE
FREG = 20 MHz
V = 10V
CE
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
2N5550 — NPN Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5550 Rev. 1.4 5
Physical Dimensions
Figure 10. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
D
2N5550 — NPN Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5550 Rev. 1.4 6
Physical Dimensions (Continued)
Figure 11. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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