© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 3
1Publication Order Number:
NVMFS5826NL/D
NVMFS5826NL
Power MOSFET
60 V, 24 mW, 26 A, Single N−Channel
Features
•Small Footprint (5x6 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•NVMFS5826NLWF − Wettable Flanks Product
•AEC−Q101 Qualified and PPAP Capable
•These are Pb−Free Devices and RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 60 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain Cur-
rent RYJ−mb (Notes 1,
2, 3, 4) Steady
State
Tmb = 25°CID26 A
Tmb = 100°C 19
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Tmb = 25°CPD39 W
Tmb = 100°C 19
Continuous Drain Cur-
rent RqJA (Notes 1, 3,
4) Steady
State
TA = 25°CID8.0 A
TA = 100°C 6.0
Power Dissipation
RqJA (Notes 1 & 3)
TA = 25°CPD3.6 W
TA = 100°C 1.8
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 130 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
+ 175
°C
Source Current (Body Diode) IS32 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL(pk) = 20 A, L = 0.1 mH, RG = 25 W)
EAS 20 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
RYJ−mb 3.9 °C/W
Junction−to−Ambient − Steady State (Note 3) RqJA 42
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
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A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
XXXXXX
AYWZZ
V(BR)DSS RDS(ON) MAX ID MAX
60 V 24 mW @ 10 V
26 A
32 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
S
S
S
G
D
D
D
D
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1
NVMFS5826NL
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25°C 1.0 mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.5 2.5 V
Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 10 A 18 24 mW
VGS = 4.5 V, ID = 10 A 24 32
Forward Transconductance gFS VDS = 15 V, ID = 5 A 8.0 S
CHARGES AND CAPACITANCES
Input Capacitance Ciss VGS = 0 V, f = 1 MHz,
VDS = 25 V
850 pF
Output Capacitance Coss 85
Reverse Transfer Capacitance Crss 50
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 48 V, ID = 10 A
9.1
nC
Threshold Gate Charge QG(TH) 1.0
Gate−to−Source Charge QGS 3.0
Gate−to−Drain Charge QGD 4.0
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V, ID = 10 A 17 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 48 V,
ID = 10 A, RG = 2.5 W
9.0
ns
Rise Time tr32
Turn−Off Delay Time td(OFF) 15
Fall Time tf24
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 A
TJ = 25°C 0.8 1.2 V
TJ = 125°C 0.7
Reverse Recovery Time tRR
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 10 A
15
ns
Charge Time ta11
Discharge Time tb4.0
Reverse Recovery Charge QRR 11 nC
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
TYPICAL CHARACTERISTICS
012345
Figure 1. On−Region Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
10 V
4.0 V
4.5 V
TJ = 25°C
VGS = 3.0 V
0
10
20
40
30
0
10
20
40
30
1345
VDS ≥ 10 V
TJ = 25°C
TJ = −55°C
TJ = 125°C
Figure 2. Transfer Characteristics
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
0.010
0.020
0.030
0.040
246810
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID = 10 A
TJ = 25°C
0.010
0.030
510152025
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
0.6
0.8
1.0
1.2
1.4
1.6
2.0
−50 −25 0 25 50 75 100 125 175
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
VGS = 10 V
ID = 10 A
1000
10000
10 20 30 40
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (nA)
TJ = 125°C
TJ = 150°C
VGS = 0 V
0.020
0.040
30 35 45
1.8
100
50
60
3.5 V
0.050
2
40
2.2
2.4
150 50 60
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TYPICAL CHARACTERISTICS
0
200
400
600
800
1000
1200
0 10203040
Figure 7. Capacitance Variation
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss 0
2
4
6
8
10
02468 12
Figure 8. Gate−to−Source Voltage vs. Total
Charge
Qg, TOTAL GATE CHARGE (nC)
VGS, GATE−TO−SOURCE VOLTAGE (V)
VDS = 48 A
ID = 10 A
TJ = 25°C
QT
Qgs Qgd
1.0
10
100
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
RG, GATE RESISTANCE (W)
t, TIME (ns)
VDD = 48 V
VGS = 4.5 V
ID = 10 A
td(off)
td(on)
tf
tr
0
10
20
30
50
0.5 0.6 0.7 0.9
Figure 10. Diode Forward Voltage vs. Current
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
IS, SOURCE CURRENT (A)
VGS = 0 V
TJ = 25°C
0.1
1
10
1000
0.1 1 10 100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
1 ms
dc
10 ms
40
100
10 14 16 18
1.00.8
60
10 ms
50 60
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
175125100755025
0
5
15
20
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
10
ID = 20 A
150
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5
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Response
PULSE TIME (sec)
RqJA(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.1
Duty Cycle = 0.5
0.2
0.05
0.02
0.01
Single Pulse
DEVICE ORDERING INFORMATION
Device Marking Package Shipping†
NVMFS5826NLT1G V5826L DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5826NLWFT1G 5826LW DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5826NLT3G V5826L DFN5
(Pb−Free)
5000 / Tape & Reel
NVMFS5826NLWFT3G 5826LW DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVMFS5826NL
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6
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
0.475
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
3X 4X
4X
M3.00 3.40
q0 −−−
_
3.80
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15 BSC
D1 4.70 4.90
D2 3.80 4.00
E6.15 BSC
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.61
K1.20 1.35
L0.51 0.61
L1 0.05 0.17
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 BC
0.05 cL
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
0.20
M
PIN 5
(EXPOSED PAD)
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NVMFS5826NL/D
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