2N1131 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (oC)175o I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)150m @I(B) (A) (Test Condition)15m h(FE) Min. Current gain.20 h(FE) Max. Current gain.45 @I(C) (A) (Test Condition)150m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) C(obo) (Max) (F)45p @V(CB) (V) (Test Condition)10 @Freq. (Hz) (Test Condition)140k