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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 1
AMPLIFIERS - LINEAR & POWER - SMT
HMC797LP5E
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
v02.0811
General Description
Features
Functional Diagram
The HMC797LP5E is a GaAs MMIC pHEMT Distrib-
uted Power Amplier which operates between DC
and 22 GHz. The amplier provides 13.5 dB of gain,
39 dBm output IP3 and +28 dBm of output power at
1 dB gain compression while requiring 400 mA from
a +10 V supply. This versatile PA exhibits a positive
gain slope from 4 to 20 GHz making it ideal for EW,
ECM, Radar and test equipment applications. The
HMC797LP5E amplier I/Os are internally matched
to 50 Ohms facilitating integration into mutli-chip-
modules (MCMs), is packaged in a leadless QFN 5x5
mm surface mount package, and requires no external
matching components.
High P1dB Output Power: 28 dBm
High Psat Output Power: 29.5 dBm
High Gain: 13.5 dB
High Output IP3: 39 dBm
Supply Voltage: +10 V @ 400 mA
50 Ohm Matched Input/Output
32 Lead 5x5 mm SMT Package: 25 mm
Typical Applications
The HMC797LP5E is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Electrical Specications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 400 mA*
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range DC - 12 12 - 18 18 - 22 GHz
Gain 11 12.5 11 13.5 11 13.5 dB
Gain Flatness ±0.7 ±0.5 ±0.5 dB
Gain Variation Over Temperature 0.012 0.008 0.008 dB/ °C
Input Return Loss 13 15 15 dB
Output Return Loss 12 16 13 dB
Output Power for 1 dB Compression (P1dB) 26 28 25 27 23.5 25.5 dBm
Saturated Output Power (Psat) 29.5 29 27 dBm
Output Third Order Intercept (IP3) 39 37 35 dBm
Noise Figure 3.5 4 6 dB
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 400 440 400 440 400 440 mA
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 400 mA typical.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
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Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Low Frequency Gain & Return Loss
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
HMC797LP5E
v02.0811
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
-30
-20
-10
0
10
20
0 5 10 15 20 25 30
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0 4 8 12 16 20 24
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-45
-35
-25
-15
-5
5
15
25
0.00001 0.0001 0.001 0.01 0.1 1 10
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
0 4 8 12 16 20 24
+25C
+85C
-40C
NOISE FIGURE(dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0 4 8 12 16 20 24
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
18
0 4 8 12 16 20 24
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 3
AMPLIFIERS - LINEAR & POWER - SMT
Psat vs. Supply Current
Psat vs. Temperature Psat vs. Supply Voltage
P1dB vs. Supply Current
HMC797LP5E
v02.0811
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
20
22
24
26
28
30
32
0 4 8 12 16 20 24
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
0 4 8 12 16 20 24
+8V
+10V
+11V
Psat (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
0 4 8 12 16 20 24
300 mA
350 mA
400 mA
Psat (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
0 4 8 12 16 20 24
300 mA
350 mA
400 mA
P1dB (dBm)
FREQUENCY (GHz)
P1dB vs. Temperature P1dB vs. Supply Voltage
20
22
24
26
28
30
32
0 4 8 12 16 20 24
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
0 4 8 12 16 20 24
+8V
+10V
+11V
P1dB (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
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Output IM3 @ Vdd = +11V
Output IP3 vs.
Supply Voltage @ Pout = 18 dBm / Tone
Output IM3 @ Vdd = +8V
Output IM3 @ Vdd = +10V
Output IP3 vs.
Temperature @ Pout = 18 dBm / Tone
Output IP3 vs.
Supply Currents @ Pout = 18 dBm / Tone
20
25
30
35
40
45
0 4 8 12 16 20 24
300 mA
350 mA
400 mA
IP3 (dBm)
FREQUENCY (GHz)
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22 24
2 GHz
10 GHz
18 GHz
22 GHz
IM3 (dBc)
Pout/TONE (dBm)
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22 24
2 GHz
10 GHz
18 GHz
22 GHz
IM3 (dBc)
Pout/TONE (dBm)
20
25
30
35
40
45
0 4 8 12 16 20 24
+8V
+10V
+11V
IP3 (dBm)
FREQUENCY (GHz)
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22 24
2 GHz
10 GHz
18 GHz
22 GHz
IM3 (dBc)
Pout/TONE (dBm)
20
25
30
35
40
45
0 4 8 12 16 20 24
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
HMC797LP5E
v02.0811
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 5
AMPLIFIERS - LINEAR & POWER - SMT
HMC797LP5E
v02.0811
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Gain & Power vs. Supply Current @ 10 GHz Gain & Power vs. Supply Voltage @ 10 GHz
10
15
20
25
30
35
300 320 340 360 380 400
Gain
P1dB
Psat
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
10
15
20
25
30
35
8 9 10 11
Gain
P1dB
Psat
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
0
1
2
3
4
5
6
0 4 8 12 16 20
Max Pdis @ 85C
2 GHz
10 GHz
20 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
Power Dissipation
Power Compression @ 10 GHz
Reverse Isolation vs. Temperature
0
4
8
12
16
20
24
28
32
0 3 6 9 12 15 18 21 24
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-70
-60
-50
-40
-30
-20
-10
0
0 4 8 12 16 20 24
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 6
HMC797LP5E
v02.0811
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Second Harmonics vs. Temperature
@ Pout = 18 dBm, Vdd = 10V & Vgg = 3.5V
Second Harmonics vs.
Vdd @ Pout = 18 dBm, Idd = 400 mA [1]
Second Harmonics vs.
Idd @ Pout = 18 dBm, Vgg2 = 3.5V
Second Harmonics vs. Pout
Vdd = 10V & Vgg = 3.5V & Idd = 400 mA
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+25C
+85C
-40C
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+8V
+10V
+11V
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
300 mA
350 mA
400 mA
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+10 dBm
+12 dBm
+14 dBm
+16 dBm
+18 dBm
+20 dBm
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 7
AMPLIFIERS - LINEAR & POWER - SMT
HMC797LP5E
v02.0811
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Outline Drawing
Part Number Package Body Material Lead Finish MSL Rating Package Marking [1]
HMC797LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H797
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reow temperature of 260 °C
Package Information
Absolute Maximum Ratings
Nominal Drain Supply to GND +12.0 V
Gate Bias Voltage (Vgg1) -3.0 to 0 Vdc
Gate Bias Current (Igg1) < +10 mA
Gate Bias Voltage (Vgg2) +2.0 V to (Vdd - 6.5 V)
Gate Bias Current (Igg2) < +10 mA
Continuous Pdiss (T= 85 °C)
(derate 69 mW/°C above 85 °C) 4.5 W
RF Input Power +27 dBm
Output Power into VSWR >7:1 +29 dBm
Storage Temperature -65 to 150 °C
Max Peak Reow Temperature 260 °C
ESD Sensitivity (HBM) Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Vdd (V) Idd (mA)
+9 400
+10 400
+11 400
Typical Supply Current vs. Vdd
Junction Temperature to Main-
tain 1 Million Hour MTTF 150 °C
Nominal Junction Temperature
(T=85 °C, Vdd = 10 V) 144 °C
Thermal Resistance
(channel to ground paddle) 14.6 °C/W
Operating Temperature -40 to +85 °C
Reliability Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 8
Pin Number Function Description Interface Schematic
1, 4, 6, 8, 9, 17,
20, 22, 24, 25, 32
Package Bottom
GND These pins & exposed ground paddle must be connected to
RF/DC ground.
2 VGG2
Gate control 2 for amplier. Attach bypass
capacitor per application circuit herein. For nominal
operation +3.5V should be applied to Vgg2.
3, 7, 10 - 12, 14,
18, 19, 23, 26 -
28, 31
N/C No connection required. These pins may be connected to
RF/DC ground without affecting performance.
5 RFIN This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
13 VGG1
Gate control 1 for amplier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplier Biasing Procedure”
application note.
15 ACG4
Low frequency termination. Attach bypass
capacitor per application circuit herein.
16 ACG3
21 RFOUT & VDD RF output for amplier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
29 ACG2 Low frequency termination. Attach bypass
capacitor per application circuit herein.
30 ACG1
Pin Descriptions
HMC797LP5E
v02.0811
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 9
AMPLIFIERS - LINEAR & POWER - SMT
HMC797LP5E
v02.0811
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Evaluation PCB
List of Materials for Evaluation PCB 130784 [1]
Item Description
J1, J2 SMA Connectors
J3, J4 DC Pins
C1 - C4 100 pF Capacitor, 0402 Pkg.
C5, C8 10 kpF Capacitor, 0402 Pkg.
C9 - C11 4.7 µF Capacitor, Tantalum
R1, R2 0 OHM Resistor, 0402 Pkg
U1 HMC797LP5E Power Amplier
PCB [2] 127135 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon FR4
The circuit board used in the application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 10
Application Circuit
HMC797LP5E
v02.0811
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
