Plastic Power Transistor Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector Feature: * omplementary Silicon Transistors Intended for a Wide Variety of Switching and Amplifier Applications, Series and Shunt C Regulators, Driver and Output Stages of Hi-Fi Amplifiers Absolute Maximum Ratings (Ta = 25C): Description Symbol TIP41C Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO 5 Collector Current Continuous IC 6 Collector Current Peak ICM 10 IB 2 Base Current Power Dissipation upto Tc = 25C Derate above 25C Power Dissipation upto Ta = 25C Derate above 25C PD 100 65 520 2 16 Unclamped Inductive Load Energy *E 62.5 Storage Temperature Tstg 150 Junction Temperature Tj - 65 to +150 Junction to Case Rth (j-c) 1.92 Junction to Ambient in Free Air Rth (j-a) 62.5 Unit V A W mW/C mJ C Thermal Resistance C/W * Ic = 2.5A, L = 20mH, P.R.F. = 10Hz, Vcc = 10V, RBE = 100 www.element14.com www.farnell.com www.newark.com Page <1> 12/12/12 V1.0 Plastic Power Transistor Electrical Characteristics (TC = 25C unless specified otherwise): Description Symbol Test Condition Min. Max. Unit Collector Emitter Voltage *VCEO IC = 30mA, IB = 0 100 - V Collector Cut off Current ICEO VCE = 60V, IB = 0 - 0.7 Collector Cut off Current ICES VCE = VCEO (max.), VBE = 0 - 0.4 Emitter Cut off Current IEBO VEB = 5V, IC = 0 - 1 *hFE IC = 0.3A, VCE = 4V IC = 3A, VCE = 4V 30 15 75 Collector Emitter Saturation Voltage *VCE (sat) IC = 6A, IB = 0.6A - 1.5 Base Emitter on Voltage *VBE (on) IC = 6A, VCE =4 V - 2 Symbol Test Condition Min. Max. Unit Small Signal Current Gain hfe IC = 0.5A, VCE = 10V, f = 1kHz 20 - - Transition Frequency fT IC = 0.5A, VCE = 10V, f = 1MHz 3 - MHz DC Current Gain mA V *Pulse Test : Pulse width 300s, Duty Cycle 2%. Dynamic Characteristics Description Switching Characteristics Description Symbol Test Condition Typical Turn On Time ton 0.6 Turn Off Time toff Vcc = 30V, Ic = 6A, IB1 = IB2 = 0.6A, RL = 5 1.4 Unit s www.element14.com www.farnell.com www.newark.com Page <2> 12/12/12 V1.0 Plastic Power Transistor Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector Dimensions Min. Max. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D - 0.9 E 1.15 1.4 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J - 0.56 K 12.7 14.73 L 2.8 4.07 M 2.03 2.92 N - 31.24 O 7 Dimensions : Millimetres Part Number Table Description Part Number Transistor, NPN, TO-220 TIP41C Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <3> 12/12/12 V1.0