VDRM IT(AV)M IT(RMS) ITSM VT0 rT = 4200 V = 1150 A = 1800 A = 19x103 A = 0.95 V = 0.575 mW Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-06 Jul 13 * Patented free-floating silicon technology * Low on-state and switching losses * Designed for traction, energy and industrial applications * Optimum power handling capability Blocking Maximum rated values 1) Parameter Symbol Conditions f = 50 Hz, tp = 10 ms, Max repetitive peak forward VDRM, Tvj = 5...125 C, Note 1 and reverse blocking voltage VRRM Critical rate of rise of commutating voltage dv/dtcrit 5STP 12F4200 4200 Unit V 1000 V/s Exp. to 2810 V, Tvj = 125 C Characteristic values Parameter Forward leakage current Symbol Conditions IDRM VDRM, Tvj = 125 C Reverse leakage current IRRM min typ VRRM, Tvj = 125 C max 200 Unit mA 200 mA max 24 Unit kN Note 1: Voltage de-rating factor of 0.11 % per C is applicable for Tvj below +5 C Mechanical data Maximum rated values 1) Parameter Mounting force Symbol Conditions FM min 14 typ 22 Acceleration a Device unclamped 50 m/s Acceleration a Device clamped 100 m/s max 0.6 Unit kg 2 2 Characteristic values Parameter Weight Symbol Conditions m Housing thickness H Surface creepage distance DS 25 mm Air strike distance Da 14 mm FM = 22 kN, Ta = 25 C min typ 26.1 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 26.5 mm 5STP 12F4200 On-state Maximum rated values 1) Parameter Average on-state current Symbol Conditions IT(AV)M Half sine wave, Tc = 70 C RMS on-state current IT(RMS) Peak non-repetitive surge current ITSM Limiting load integral I2t Peak non-repetitive surge current ITSM Limiting load integral I2t min typ tp = 10 ms, Tvj = 125 C, sine half wave, VD = VR= 0 V, after surge tp = 10 ms, Tvj = 125 C, sine half wave, VR= 0.6*VRRM, after surge max 1150 Unit A 1800 A 19x103 A 1.81x106 A2s 12x103 A 720x103 A2s Characteristic values Parameter Symbol Conditions On-state voltage VT Threshold voltage V(T0) Slope resistance rT Holding current IH Latching current IL min typ IT = 2000 A, Tvj = 125 C max Unit 2.1 V 0.95 V 0.575 mW Tvj = 25 C 80 mA Tvj = 125 C 60 mA Tvj = 25 C 500 mA Tvj = 125 C 200 mA IT = 600 A - 1800 A, Tvj= 125 C Switching Maximum rated values 1) Parameter Symbol Conditions Critical rate of rise of onstate current di/dtcrit Critical rate of rise of onstate current di/dtcrit Circuit-commutated turn-off tq time Tvj = 125 C, ITRM = 2000 A, VD 2810 V, IFG = 2 A, tr = 0.5 s min typ max Unit Cont. f = 50 Hz 100 A/s Cont. f = 1 Hz 1000 A/s Tvj = 125 C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/s, VD 0.67xVDRM, dvD/dt = 20 V/s 900 s Characteristic values Parameter Reverse recovery charge Reverse recovery current Symbol Conditions Qrr Tvj = 125 C, ITRM = 2000 A, VR = 200 V, IRM diT/dt = -1.5 A/s Gate turn-on delay time tgd min 1400 typ 40 Tvj = 25 C, VD = 0.4xVRM, IFG = 2 A, tr = 0.5 s max 2400 Unit As 54 A 2 s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-06 Jul 13 page 2 of 7 5STP 12F4200 Triggering Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Peak forward gate voltage VFGM 12 V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Average gate power loss PG(AV) see Fig. 7 W Characteristic values Parameter Symbol Conditions min typ max Unit Gate-trigger voltage VGT Tvj = 25 C 2.6 V Gate-trigger current IGT Tvj = 25 C 400 mA Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 125 C 0.3 V Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 125 C 10 mA Thermal Maximum rated values 1) Parameter Symbol Conditions Operating junction temperature range Tvj min Storage temperature range Tstg typ -40 max Unit 125 C 140 C max Unit 17 K/kW Characteristic values Parameter Symbol Conditions Double-side cooled Thermal resistance junction Rth(j-c) Fm = 14...24 kN to case min typ Rth(j-c)A Anode-side cooled Fm = 14...24 kN 33 K/kW Rth(j-c)C Cathode-side cooled Fm = 14...24 kN 35 K/kW Double-side cooled Fm = 14...24 kN 4 K/kW Single-side cooled Fm = 14...24 kN 8 K/kW Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: n Z th(j - c) (t) = a R i (1 - e - t/t i ) i =1 i 1 2 3 4 Ri(K/kW) 10.350 3.760 2.290 0.670 ti(s) 0.3723 0.0525 0.0057 0.0023 Fig. 1 Transient thermal impedance (junction-tocase) vs. time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-06 Jul 13 page 3 of 7 5STP 12F4200 Fig. 2 On-state voltage characteristics Fig. 3 On-state characteristics, Tvj = 125 C, 10 ms half sine Fig. 4 On-state power dissipation vs. mean on-state current, turn-on losses excluded Fig. 5 Max. permissible case temperature vs. mean on-state current, switching losses ignored ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-06 Jul 13 page 4 of 7 5STP 12F4200 IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) 2..5 A 1.5 IGT 2 A/ms 1 ms 5...20 ms diG/dt IGon 10 % t tr tp (IGM) tp (IGon) Fig. 6 Recommended gate current waveform Fig. 7 Max. peak gate power loss Fig. 8 Reverse recovery charge vs. decay rate of on-state current Fig. 9 Peak reverse recovery current vs. decay rate of on-state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-06 Jul 13 page 5 of 7 5STP 12F4200 Turn-on and Turn-off losses Fig. 10 Turn-on energy, half sinusoidal waves Fig. 11 Turn-on energy, rectangular waves Fig. 12 Turn-off energy, half sinusoidal waves Fig. 13 Turn-off energy, rectangular waves Total power loss for repetitive waveforms: IT(t) IT(t), V(t) PTOT = PT + Won x f + Woff x f -diT/dt where t Qrr V(t) -IRRM -V0 T 1 PT = o IT x VT (IT ) dt T 0 -dv/dtcom -VRRM Fig. 14 Current and voltage waveforms at turn-off Fig. 15 Relationships for power loss ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-06 Jul 13 page 6 of 7 5STP 12F4200 H Fig. 16 Device Outline Drawing Related documents: 5SYA 2020 5SYA 2049 5SYA 2051 5SYA 2034 5SYA 2036 5SZK 9104 5SZK 9105 Design of RC-Snubber for Phase Control Applications Voltage definitions for phase control thyristors and diodes Voltage ratings of high power semiconductors Gate-Drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1021-06 Jul 13