November 1999
1999 Fairc hild S emi c onduc tor Corporation FDP8030L Rev C(W)
FDP8030L/FDB8030L
N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel Logic level MOSFET has been
designed specifical ly to improve t he overal l efficienc y of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETS feature faster switching and lower
gate charge than other MOSFETS with comparable
RDS(on) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply desi gns with hi gher overal l efficiency.
Features
• 80 A, 30 V. RDS(ON) = 0.0035 Ω @ VGS = 10 V
RDS(ON) = 0.0045 Ω @ VGS = 4.5 V
• Critic al DC elect ric al param eters specified at
elevated tem perature
• Rugged internal s ource-drain di ode can el iminate the
need for an external Zener diode transient
suppressor
• High performanc e trenc h technology for extremely
low RDS(ON)
• 175°C maximum junction temperature rating
S
GDTO-220
FDP Series
D
GSTO-263AB
FDB Series S
D
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Sourc e V oltage 30 V
VGSS Gate-Source Voltage ±20 V
IDDrain Current – Continuous (Note 1) 80 A
– Pulsed (Note 1) 300
PDTotal Power Dissipation @# TC = 25°C187 W
Derate above 25°C1.25 W°C
TJ, TSTG Operating and Storage Junction Temperature Range -65 to +175 °C
TLMaximum lead temperature f or sol deri ng purposes,
1/8” from case for 5 seconds 275 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Cas e 0.8 °C/W
RθJA Thermal Resistance, Junction-to-Am bient 62.5 °C/W
FDP8030L/FDB8030L
FDP8030L Rev C(W )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Sou rce Avalanche Ratings (Note 1)
WDSS Single Pulse Drain-Source
Avalanche Energy VDD = 20 V, ID = 80 A 1500 mJ
IAR Maximum Drain-Sourc e Avalanche
Current 80 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C23 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA
IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leak age, Reverse VGS = –20 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA11.52 V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coeffic i ent ID = 250 µA, Referenc ed to 25°C–5 mV/°C
VGS = 10 V, ID = 80 A
TJ=125°C3.1
4.0 3.5
5.6 mΩ
RDS(on) Static Drain–S ource
On–Resistance VGS = 4.5 V, ID = 70 A 3.6 4.5
ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V 60 A
gFS Forward Transconductance VDS = 10 V, ID = 80 A 170 S
Dynamic Characteristics
Ciss Input Capacitance 10500 pF
Coss Output Capacitance 2700 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz 1650 pF
Switching Characteristics (Note 2)
tD(on) Turn–On Delay Time 20 35 ns
trTurn–On Rise Time 185 225 ns
tD (off) Turn–Off Delay Time 160 200 ns
tfTurn–Off Fall Ti me
VDD = 15 V, ID = 50 A,
VGS = 4.5 V, RGEN = 10 Ω
RGS = 10 Ω
200 240 ns
QgTotal Gate Charge 120 170 nC
Qgs Gate–Source Charge 27 nC
Qgd Gate–Drain Charge
VDS = 15 V,
ID = 80 A, VGS = 5 V
48 nC
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drai n–S ource Diode Forward Current (Note 1) 80 A
ISM Maximum Pulsed Drain-S ource Diode Forward Current (Note 1) 300 A
VSD Drain–Source Di ode Forward Volt age VGS = 0 V, IS = 80 A (Note 1) 11.3 V
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDP8030L Rev C(W )
Typical Characteristics
0 0.5 1 1.5 2
0
20
40
60
80
100
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
3.5V
2.5V
4.5V
DS
D
3.0V
0 20406080100120
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 2.5V
GS
10V
3.5V 4.5V
D
6.0V
3.0V
R , NORMALIZED
DS(ON)
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I = 80A
D
0
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.01
2345678
VGS, GATE T O SO URCE VOLT AGE ( V )
RDS(ON), ON-RESISTANCE (OHM)
ID = 40A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1234
0
10
20
30
40
50
60
V , GATE TO S O UR CE VO LTAGE ( V )
I , DRA IN CURREN T (A)
GS
25°C
125°C
V = 10V
DS
D
T = -55°C
A
0 0.2 0.4 0.6 0.8 1 1.2 1.4
0.0001
0.001
0.01
0.1
1
10
60
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125° C
A
25°C
-55°C
V = 0V
GS
SD
S
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP8030L/FDB8030L
FDP8030L Rev C(W )
Typical Characteristics
0 40 80 120 160 200 240
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 80A
DV = 5V
DS 10V
15V
0.1 0.5 1 2 5 10 30
500
1000
2000
5000
10000
18000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
V = 0V
GS
C
oss
C
rss
C
iss
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.3 1 3 5 10 20 30 50
0.5
1
2
5
10
20
50
100
300
600
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
100µs
1ms
10ms
100ms
DC
R Limit
DS(ON)
V = 10V
SINGLE PULSE
R = 0.8 °C/W
T = 25 °C
GS
θJC
C
0.1 0.3 1 3 10 30 100 300 1,000
0
1000
2000
3000
4000
5000
SINGLE PULSE TIME (mSEC)
POW E R (W )
SINGLE PULSE
R = 0.8°C/W
T = 25 °C
θJC
C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
0.005
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
TRANSIENT THERMAL RESISTANCE
Singl e Pulse
D = 0. 5
0.1
0.05
0.02
0.01
0.2
r(t), NORMA LIZE D EF F E CTI V E
1
Duty Cycle, D = t /t
12
R (t) = r(t) * R
R = 0.8 °C/W
θJC
θJC
θJC
T - T = P * R (t)
θJC
CJ
P(pk)
t
1 t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDP8030L/FDB8030L
TO-220 Tape and Reel Data and Package Dimensions
August 1999, Rev. B
0.165
TO-220 Tube Packing
Configuration: Figure 1.0
Note/Comments
Packaging Option
TO-220 Packaging Information
Standard
(no
flow code)
Packaging type Rail/Tube
Qty per Tube/Box 45
Box Dimension (mm) 530x130x83
Max qty per Box 1,080
Weight per unit (gm) 1.4378
S62Z
BULK
300
114x102x51
1,500
1.4378
FSCINT Label
FSCINT Label
114mm x 102mm x 51mm
EO70 Immediate Box
530mm x 130mm x 83mm
Int ermed ia te box
300 un i ts pe r
EO70 box 5 EO70 boxes per per
Intermediate Box
1500 units m axim um
quantity per intermediate box
Anti-static
Bubbl e Sheets
45 units per Tube
Conduct ive Plastic Bag
1080 units m axim um
quantity per box
530mm x 130mm x 83mm
Int ermed ia te box
FSCINT Label
12 Tubes per Bag
Note: All dimensions are in inches
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
1.300
±.015
0.080
0.032
±.003
0.275
0.275
0.160
0.800
0.450
±.030
20.000
+0.031
-0.065
0.123
+0.001
-0.003
LOT:
CBVK741B019
NSID:
FDP7060
D/C1:
D9842
SPEC REV:
B2
SPEC:
QTY:
1080
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
(FSCINT)
FSCINT Label sample
TO-220 Tube
Configuration: Figure 4.0
TO-220 Packaging
Information: Figure 2.0
TO-220 bulk Packing
Configuration: Figure 3. 0
2 bags per Box
Packaging Description:
TO-220 parts are shipped normally in tube. The tube is
made of PVC plastic treated with anti -stati c agent.These
tubes in standard option are placed inside a dissipative
plastic bag, barcode labeled, and placed inside a box
made of recyclable corrugat ed pa per. One b ox contains
t wo ba gs max im um (s ee f ig. 1.0). And one or several o f
these boxes are placed inside a labeled shipping box
w h ic h co m es in d i f f eren t s i zes de pe ndin g o n th e nu m be r
of parts shipped. The other option comes in bulk as
desc r ibed in t he Pack agin g In fo rm atio n table. The units in
this option are placed inside a small box laid w ith anti-
static bubble sheet. These smaller boxes are indi vidually
labeled and placed inside a larger box (see fig. 3.0).
These larger or intermediate boxes then will be placed
finally inside a labeled shipping box whic h still comes in
di fferent sizes depend ing on the number of units shipped.
TO-220 (FS PKG Code 37)
TO-220 Tape and Reel Data and Package Dimensions, continued
September 1998, Rev. A
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
TO-263AB/D2PAK Packaging
Configuration: Figure 1.0
Components
TO-263AB/D2PAK Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
TO-263AB/D2PAK Packaging Information
Standard
(no flow code) L86Z
Packaging type
Reel Size
TNR
13" Dia
Rail/Tube
-
Qty per Reel/Tube/Bag 800 45
Box Dimension (mm) 359x359x57 530x130x83
Max qty per Box 800 1,080
Weight per unit (gm) 1.4378 1.4378
Weig ht pe r Reel 1.6050 -
Moisture Sensitive
Label
DRYPACK Bag
ESD Label
F63TNR Label
359mm x 359mm x 57mm
St a nd ard I n te r m ed ia te bo x
TO-263AB/D2PAK Unit Orientation
FDB603AL
F
9835 FDB603AL
F
9835
FDB603AL
F
9835
FDB603AL
F
9835
F63TNR Label sample
Static D issipative
Embossed Carrier Tape
F63TNR
Label
Antistatic Cover Tape
ESD Label
ELECTROSTATIC
SENSITIVE DEVICES
DO NOT SHI P OR STORE NEAR STRONG EL ECTROSTATIC
ELECTROMAGNETIC, MAGNETIC OR R ADIOACTI VE FIELDS
TN R DA T E
PT NUM B ER
PEEL STRENGTH MIN _____ ____ __ ___gms
MAX _____________ gms
CAUTION
Moisture Sensitive
Label
Customized
Label
LOT: CBVK741B019
FSID: FD B6320L
D/C1: D9842 QTY1: SPEC REV:
SPEC:
QTY: 800
D/C2: QTY2: CPN: N/F: F (F63TNR)3
Leader Tape
1520mm minimum or
95 empty poc kets
Tr aile r Tape
400mm min imum or
25 empty poc kets
Packaging Description:
TO-263/D2PAK parts are shipped in tape. The carrier tape
is made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
800 u nits per 13" or 330cm diam eter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). This and some other options are further
described in the Packaging Information table.
These full reels are individually barcode labeled, dry
packed, and placed inside a standard intermediate box
(illustrated in figure 1.0) made of recyclable corrugated
brown paper. One box contains one reel maximum. And
these boxes are placed inside a barcode labeled shipping
box which comes in different sizes depending on the
num ber of par ts shipped.
TO-263AB/D2PAK Tape and Reel Data and Package
Dimensions
September 1999, Rev. B
P1
A0 D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size Reel
Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
24m m 13" Dia 13.00
330 0.059
1.5 512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 4.00
100 0.961 +0.078/-0.000
24.4 +2/0 1.197
30.4 0.941 – 0.1.079
23.9 – 27.4
See detail AA
Dim A
max
13" Diameter Option
Dim A
Max
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum component rotation
0.9mm
maximum
0.9mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
10 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
TO-263AB/D
2
PAK Embossed Carrier Tape
Configuration: Figure 3.0
TO-263AB/D
2
PAK Reel Configuration:
Figure 4.0
Dimensions are in millimeter
P kg type
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
TD
2
PAK
O263AB/
(24mm)
10.60
+/-0.10 15.80
+/-0.10 24.0
+/-0.3 1.55
+/-0.05 1.60
+/-0.10 1.75
+/-0.10 22.25
min 11.50
+/-0.10 16.0
+/-0.1 4.0
+/-0.1 4.90
+/-0.10 0.450
+/-0.150 21.0
+/-0.3 0.06
+/-0.02
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
August 1999, Rev. B
TO-263AB/D2PAK (FS PKG Code 45)
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
August 1998, Rev. A
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
SyncFET™
TinyLogic™
UHC™
VCX™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Rev. D
