A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/3
Specif i cations are subj ect to change wi thout notice.
ELECTRICAL CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
IP ASTD 1020 100 200 µ
µµ
µA
ASTD 2030 200 300
ASTD 3040 300 400
ASTD 4050 400 500
ASTD 5060 500 600
VF IF = 3 mA ASTD 1020 135 mV
ASTD 2030 130
ASTD 3040 125
ASTD 4050 120
ASTD 5060 110
VR IR = 500 µA 400 mV
PLANAR TUNNEL (BACK) DIODE
ASTD SERIES
DESCRIPTION:
The ASTD Series of Tunnel Diodes
are Optimized f or Operation as Back
Diode Detectors in Applications up
to 18 GHz.
FEATURES INCLUDE:
• Excellent Temperature Stability
• Fast Rise / Fall Tim es
• Available in Die Form
MAX IMUM RATINGS
IR 10 mA
PDISS 3 ERG spike
PDISS 50 mW @ T A = +60 OC
TJ -65 to +110 OC
TSTG -65 to +125 OC
PACKAGE STYLE 51
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/3
ASTD SERIES
PLANAR TUNNEL (BACK) DIODE
Specif i cations are subj ect to change wi thout notice.
DYNAMIC ELECTRICAL CHARACTERISTICS TC = 25 OC
Symbol Test Conditions Minimum Typical Maximum Units
λ
λλ
λ F = 10 GHz RL = 10 KΩ ASTD 1020 1,000
mV/mW
PIN = -20 dBm ASTD 2030 750
ASTD 3040 500
ASTD 4050 275
ASTD 5060 250
RV F = 10 GHz RL = 10 KΩ ASTD 1020 180 Ω
ΩΩ
Ω
PIN = -20 dBm ASTD 2030 130
ASTD 3040 80
ASTD 4050 65
ASTD 5060 60
RS IR = 10 mA F = 100 MHz 7.0 Ω
ΩΩ
Ω
ORDERING INFORMATION:
ASTD-XXXX-XX
_____ 51 = Case Style 51
820 = Case Style 820
860 = Case Style 860
__________ 1020
2030
3040
4050
5060
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 3/3
ASTD SERIES
PLANAR TUNNEL (BACK) DIODE
Specif i cations are subj ect to change wi thout notice.
PACKAGE STYLE 820
PACKAGE STYLE 860
