A1P35S12M3-F - STMICROELECTRONICS

ACEPACK™ 1

Features

• ACEPACK™ 1 power module

– DBC Cu Al2O3 Cu

• Sixpack topology

– 1200 V, 35 A IGBTs and diodes

– Soft and fast recovery diode

• Integrated NTC

Applications

• Inverters

• Industrial

• Motor drives

Description

This power module is a sixpack topology in an ACEPACK™ 1 package with NTC,

integrating the advanced trench gate field-stop technologies from

STMicroelectronics. This new IGBT technology represents the best compromise

between conduction and switching loss, to maximize the efficiency of any converter

system up to 20 kHz.

Product status

A1P35S12M3-F

Product summary

Order code A1P35S12M3-F

Marking A1P35S12M3-F

VCES, IC ratings 1200 V, 35 A

Package ACEPACK™ 1

Packing Press fit contact pins

ACEPACK™ 1 sixpack topology, 1200 V, 35 A,

trench gate field‑stop M series IGBT with soft diode and NTC

A1P35S12M3-F

Datasheet

DS11636 - Rev 5 - November 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

1Electrical ratings

1.1 IGBT

Limiting values at TJ = 25 °C, unless otherwise specified.

Table 1. Absolute maximum ratings of the IGBT

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 1200 V

ICContinuous collector current (TC = 100 °C) 35 A

ICP(1) Pulsed collector current (tp = 1 ms) 70 A

VGE Gate-emitter voltage ±20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 250 W

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBT

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CES Collector-emitter breakdown

voltage IC = 1 mA, VGE = 0 V 1200 V

VCE(sat)

(terminal)

Collector-emitter saturation

voltage

VGE = 15 V, IC= 35 A 1.95 2.45

VGE = 15 V, IC = 35 A,

TJ = 150 ˚C 2.3

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V ± 500 nA

Cies Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0 V

2154 pF

Coes Output capacitance 164 pF

Cres Reverse transfer capacitance 86 pF

QgTotal gate charge

VCC = 960 V, IC = 35 A,

VGE = ±15 V 163 nC

td(on) Turn-on delay time VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

di/dt = 1900 A/µs

122 ns

trCurrent rise time 17 ns

Eon(1) Turn-on switching energy 1.21 mJ

td(off) Turn-off delay time VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

dv/dt = 7800 V/µs

142 ns

tfCurrent fall time 150 ns

Eoff(2) Turn-off switching energy 2.19 mJ

A1P35S12M3-F

Electrical ratings

DS11636 - Rev 5 page 2/16

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

di/dt = 1533 A/µs,

TJ = 150 °C

124 ns

trCurrent rise time 18 ns

Eon(1) Turn-on switching energy 1.8 mJ

td(off) Turn-off delay time VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

dv/dt = 6700 V/µs,

TJ = 150 °C

142 ns

tfCurrent fall time 256 ns

Eoff(2) Turn-off switching energy 3.1 mJ

tSC Short-circuit withstand time

VCC ≤ 600 V, VGE ≤ 15 V,

TJstart ≤ 150 °C 10 µs

RTHj-c Thermal resistance junction-

to-case Each IGBT 0.55 0.60 °C/W

RTHc-h Thermal resistance case-to-

heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.70 °C/W

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

1.2 Diode

Limiting values at TJ = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 1200 V

IFContinuous forward current at TC = 100 °C 35 A

IFP(1) Pulsed forward current (tp = 1 ms) 70 A

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 4. Electrical characteristics of the diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

(terminal)

Forward voltage

IF = 35 A - 2.95 4.1

IF = 35 A, TJ = 150 ˚C - 2.3

trr Reverse recovery time

IF = 35 A, VR = 600 V,

VGE = ±15 V, di/dt = 1900 A/μs

- 140 ns

Qrr Reverse recovery charge - 2.62 µC

Irrm Reverse recovery current - 54 A

Erec Reverse recovery energy - 1.2 mJ

A1P35S12M3-F

Diode

DS11636 - Rev 5 page 3/16

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time

IF = 35 A, VR = 600 V,

VGE = ±15 V, di/dt = 1533 A/μs,

TJ = 150 °C

- 350 ns

Qrr Reverse recovery charge - 6.6 µC

Irrm Reverse recovery current - 63 A

Erec Reverse recovery energy - 3.2 mJ

RTHj-c Thermal resistance junction-

to-case Each diode - 0.8 0.9 °C/W

RTHc-h Thermal resistance case-to-

heatsink Each diode, λgrease = 1 W/(m·°C) - 0.75 °C/W

1.3 NTC

Table 5. NTC temperature sensor, considered as stand-alone

Symbol Parameter Test conditions Min. Typ. Max. Unit

R25 Resistance T = 25°C 5 kΩ

R100 Resistance T = 100°C 493 Ω

ΔR/R Deviation of R100 -5 +5 %

B25/50 B-constant 3375 K

B25/80 B-constant 3411 K

T Operating temperature range -40 150 °C

Figure 1. NTC resistance vs temperature

GADG260720171142NTC

10 4

10 3

10 2

0 25 50 75 100 125

(Ω)

TC (°C)

Figure 2. NTC resistance vs temperature, zoom

GADG260720171151NTCZ

800

700

600

500

400

300

85 90 95 100 105 110

(Ω)

TC (°C)

max

min

typ

A1P35S12M3-F

NTC

DS11636 - Rev 5 page 4/16

1.4 Package

Table 6. ACEPACK™ 1 package

Symbol Parameter Min. Typ. Max. Unit

Visol Isolation voltage (AC voltage, t = 60 s) 2500 Vrms

Tstg Storage temperature -40 125 °C

CTI Comparative tracking index 200

LsStray inductance module P1 - EW loop 28.7 nH

RsModule single lead resistance, terminal-to-chip 3.9 mΩ

A1P35S12M3-F

Package

DS11636 - Rev 5 page 5/16

2Electrical characteristics (curves)

Figure 3. IGBT output characteristics (VGE = 15V, terminal)

IGBT230820171146OC25

00 1 2 3 4 5

(A)

VCE (V)

TJ = 25 °C

TJ = 150 °C

Figure 4. IGBT output characteristics

(TJ = 150 °C, terminal)

IGBT230820171148OC175

00 1 2 3 4 5

(A)

VCE (V)

9 V

17 V

19 V

15 V

13 V

11 V

Figure 5. IGBT transfer characteristics

(VCE = 15 V, terminal)

IGBT230820171148TCH

05 6 7 8 9 10 11

(A)

VGE (V)

TJ = 25 °C

TJ = 150 °C

Figure 6. IGBT collector current vs case temperature

IGBT061120180836CCT

00 25 50 75 100 125 150

(A)

TC (°C)

VCC = 15 V, TJ ≤ 175 °C

A1P35S12M3-F

Electrical characteristics (curves)

DS11636 - Rev 5 page 6/16

Figure 7. Switching energy vs gate resistance

IGBT230820171149SLG

00 20 40 60 80

(mJ)

RG (Ω)

VCC = 600 V, VGE = ± 15 V, IC = 35 A

EON (TJ = 150 °C)

EON (TJ = 25 °C)

EOFF (TJ = 150 °C)

EOFF (TJ = 25 °C)

Figure 8. Switching energy vs collector current

IGBT230820171150SLC

05 15 25 35 45 55 65

(mJ)

IC (A)

VCC = 600 V, VGE = ± 15 V, RG = 10 Ω

EON (TJ = 150 °C)

EON (TJ = 25 °C)

EOFF (TJ = 150 °C)

EOFF (TJ = 25 °C)

Figure 9. IGBT reverse biased safe operating area

(RBSOA)

IGBT230820171151FSOA

00 200 400 600 800 1000 1200

(A)

VCE (V)

TJ = 125 °C, VGE = ±15 V, RG = 10 Ω

Figure 10. Diode forward characteristics (terminal)

IGBT230820171154DVF

001234

IF (A)

VF (V)

TJ = 25 °C

TJ = 150 °C

Figure 11. Diode reverse recovery energy vs diode current

slope

IGBT230820171431RRE

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

400 800 1200 1600

Erec

(mJ)

di/dt (A/µs)

VCE = 600 V, IF = 35 A, VGE = ±15 V

TJ = 25 °C

TJ = 150 °C

Figure 12. Diode reverse recovery energy vs forward

current

IGBT230820171157RRE

4.2

3.6

3.0

2.4

1.8

1.2

0.65 15 25 35 45 55 65

Erec

(mJ)

IF (A)

TJ = 150 °C

TJ = 25 °C

VCE = 600 V, RG = 10 Ω, VGE = ±15 V

A1P35S12M3-F

Electrical characteristics (curves)

DS11636 - Rev 5 page 7/16

Figure 13. Diode reverse recovery energy vs gate

resistance

IGBT230820171158RRE

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.40 20 40 60 80

Erec

(mJ)

RG (Ω)

TJ = 150 °C

TJ = 25 °C

VCE = 600 V, IF = 35 A, VGE = ±15 V

Figure 14. Inverter diode thermal impedance

IGBT230820171500MT

10 0

10 -1

10 -3 10 -2 10 -1 10 0

Zth(°C/W)

t (s)

Zth (typ.) JH

Zth (max.) JC

i1 2 3 4

ri (˚C/W) 0.1372 0.4030 0.2525 0.1034

τi(s)

ri (˚C/W) 0.1497 0.4233 0.7016 0.2714

τi(s) 0.0919 0.4067

0.0009 0.0090

0.0513 0.3253

0.0011

0.0154

1 2 3 4

RC - Foster thermal network

Figure 15. IGBT thermal impedance

IGBT230820171153MT

10 0

10 -1

10 -3 10 -2 10 -1 10 0

Zth(°C/W)

t (s)

Zth (typ.) JH

Zth (max.) JC

i1234

ri (˚C/W) 0.0619 0.3073 0.1502 0.0784

τi(s) 0.3556

ri (˚C/W) 0.0604 0.3088 0.5759 0.3016

τi(s) 0.0005 0.0152 0.0939 0.3964

0.0005 0.0103 0.0613

1 2 3 4

RC - Foster thermal network

A1P35S12M3-F

Electrical characteristics (curves)

DS11636 - Rev 5 page 8/16

3Test circuits

Figure 16. Test circuit for inductive load switching

A A

C3.3

µF 1000

µF

L=100 µH

D.U.T

AM01504v1

Figure 17. Gate charge test circuit

AM01505v1

Figure 18. Switching waveform

AM01506v1

90%

10%

90%

10%

VCE

Td(on)

Ton

Tr(Ion)

Td(off)

Toff

Tr(Voff)

Tcross

90%

10%

Figure 19. Diode reverse recovery waveform

A1P35S12M3-F

Test circuits

DS11636 - Rev 5 page 9/16

4Topology and pin description

Figure 20. Electrical topology and pin description

G1 G3 G5

G2 G4 G6

E’W

E’V

E’U

Figure 21. Package top view with sixpack pinout

A1P35S12M3-F

Topology and pin description

DS11636 - Rev 5 page 10/16

5Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions

and product status are available at: www.st.com. ECOPACK® is an ST trademark.

A1P35S12M3-F

Package information

DS11636 - Rev 5 page 11/16

5.1 ACEPACK™ 1 sixpack press fit pins package information

Figure 22. ACEPACK™ 1 sixpack press fit pins package outline (dimensions are in mm)

GADG260220181307MT_8569715_4

Detail A

Section B-B

2.3 REF

8.5

3.5 REF x45°

33.8±0.3

28.1±0.2

19.4±0.2

16.4±0.2

62.8±0.5

53±0.1

42.5±0.2

41±0.2

48±0.3

4.5±0.1

3.20

6.40

0.00

12.80

16.00

22.40

25.60

28.80

32.00

0.00

6.40

16.00

19.20

25.60

E'W EW G4 EV E'V EU E'U

3.20

9.60

22.40

3.2 BSC

16.4±0.50

12±0.35

1.3±0.2

2.5±0.2

3.2 BSC

36.8 REF

• The lead size includes the thickness of the lead plating material.

• Dimensions do not include mold protrusion.

• Package dimensions do not include any eventual metal burrs.

A1P35S12M3-F

ACEPACK™ 1 sixpack press fit pins package information

DS11636 - Rev 5 page 12/16

Figure 23. ACEPACK™ 1 sixpack press fit pins recommended PCB holes layout (dimensions are in mm)

GADG260220181409MT_8569715_4

A1P35S12M3-F

ACEPACK™ 1 sixpack press fit pins package information

DS11636 - Rev 5 page 13/16

Revision history

Table 7. Document revision history

Date Revision Changes

04-May-2016 1 Initial release.

24-Aug-2017 2

Updated title, features, description and Table 1: "Device summary" in cover

page.

Updated Section 1: "Electrical ratings".

Added Section 2: "Electrical characteristics curves", Section 3: "Test circuits",

Section 4: "Topology and pin description" and Section 5: "Package

information".

Minor text changes.

03-Oct-2017 3

Updated Table 7: "ACEPACK™ 1 package" and Section 2: "Electrical

characteristics curves".

Minor text changes.

02-Mar-2018 4

Removed maturity status indication from cover page.

The document status is production data.

Updated silhouette in cover page and Section 5.1 ACEPACK™ 1 sixpack

press fit pins package information.

Minor text changes.

14-Nov-2018 5 Added Figure 6. IGBT collector current vs case temperature.

Minor text changes

A1P35S12M3-F

DS11636 - Rev 5 page 14/16

Contents

1Electrical ratings ..................................................................2

1.1 IGBT .........................................................................2

1.2 Diode ........................................................................3

1.3 NTC..........................................................................4

1.4 Package ......................................................................5

2Electrical characteristics (curves)..................................................6

3Test circuits .......................................................................9

4Topology and pin description .....................................................10

5Package information..............................................................11

5.1 ACEPACK™ 1 sixpack press fit pins package information ...........................12

Revision history .......................................................................14

A1P35S12M3-F

Contents

DS11636 - Rev 5 page 15/16

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ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

A1P35S12M3-F

DS11636 - Rev 5 page 16/16