UNISONIC TECHNOLOGIES CO., LTD
PZT2222A NPN SILICON TRANSISTOR
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Copyright © 2008 Unisonic Technologies Co., Ltd QW-R207-001.C
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
* This device is for use as a medium power amplifier and switch
requiring collector currents up to 500mA.
SOT-223
1
Lead-free:1111PZT2222AL
Halogen-free: PZT2222AG
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Halogen Free Package 1 2 3
Packing
PZT2222A-AA3-R PZT2222AL-AA3-R
PZT2222AG-AA3-R SOT-223 B C E Tape Reel
PZT2222AL-AA3-R (1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AA3: SOT-223
(3) G: Halogen Free, L: Lead Free,
Blank: Pb/Sn
PZT2222A NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 0.6 A
Total Device Dissipation PC 1 W
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device op eration is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA (Ta=25℃, unless otherwise noted)
PARAMETER SYMBOL RATINGS UNIT
Thermal resistance, junction to Ambient θJA 125
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0 75 V
Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0 40 V
Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 6 V
Collector Cut-off Current ICEO V
CE=60V, VEB(OFF)=3.0V 10 nA
Collector Cut-Off Current ICBO VCB=60V, IE=0
VCB=60V,IE=0, Ta=150℃ 0.01
10 μA
μA
Emitter Cut-Off Current IEBO V
EB=3.0V, IC=0 10 nA
Base Cut-Off Current IBL V
CE=60V, VEB(OFF)=3.0V 20 nA
ON CHARACTERISTICS
DC Current Gain hFE
IC=0.1mA, VCE=10V
IC=1.0mA, VCE=10V
IC=10mA, VCE=10V
IC=10mA, VCE=10V, Ta=-55℃
IC=150mA, VCE=10V*
IC=150mA, VCE=1.0V*
IC=500mA, VCE=10V*
35
50
75
35
100
50
40
300
Collector-Emitter Saturation Voltage* VCE(SAT) IC=150mA, IB=15mA
IC=500mA, IB=50mA 0.3
1.0 V
V
Base-Emitter Saturation Voltage* VBE(SAT) IC=150mA, IB=15mA
IC=500mA, IB=50mA 0.6 1.2
2.0 V
V
SMALL SIGNAL CHARACTERISTICS
Transition Freq uency fT I
C=20mA, VCE=20V, f=100MHz 300 MHz
Output Capacitance Cobo VCB=10V, IE=0, f=100kHz 8.0 pF
Input Capacitance Cibo VEB=0.5V, IC=0, f=100kHz 25 pF
Collector Base Time Constant rb'Cc IC=20mA, VCB=20V, f=31.8MHz 150 pS
Noise Figure NF IC=100μA, VCE=10V, RS=1.0kΩ,
f=1.0kHz
4.0 dB
Real Part of Common-Emitter High
Frequency Input Impedance Re(hje) IC=20mA, VCB=20V, f=300MHz
60 Ω
PZT2222A NPN SILICON TRANSISTOR
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ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Delay time tD V
CC=30V, VBE(OFF)=0.5V, 10 ns
Rise time tR I
C=150mA, IB1=15mA 25 ns
Storage time tS V
CC=30V, IC=150mA, 225 ns
Fall time tF I
B1= IB2=15mA 60 ns
*Pulse test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
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TEST CIRCUIT
PZT2222A NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
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TYPICAL CHARACTERISTICS(Cont.)
10 100 1000
160
0
Collector Current, IC (mA)
Turn On and Turn Off Times
vs. Collector Current
Time (ns)
80
240
320
400
VCC =25V
tOFF
tON
IB1=IB2=IC
10
10 100 1000
160
0
Collector Current, IC(mA)
Switching Times
vs. Collector Current
Time (ns)
80
240
320
400
VCC =25V
tS
tF
IB1=IB2=IC
10
tR
tD
Power Dissipation, PC(W)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and m ay be changed without notice.
