CGH40006S 6 W, RF Power GaN HEMT, Plastic Description Cree's CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package. Package Type: 440203 PN: CGH40006S Features Applications * * * * * * * * * * * * Up to 6 GHz Operation 13 dB Small Signal Gain at 2.0 GHz 11 dB Small Signal Gain at 6.0 GHz 8 W typical at PIN = 32 dBm 65% Efficiency at PIN = 32 dBm 28 V Operation 3mm x 3mm Package 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Large Signal Models Available for ADS and MWO Rev 3.3 - July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 2 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 120 Volts 25C Gate-to-Source Voltage VGS -10, +2 Volts 25C Storage Temperature TSTG -65, +150 C Operating Junction Temperature TJ 175 C Maximum Forward Gate Current IGMAX 2.1 mA 25C Maximum Drain Current1 IDMAX 0.75 A 25C Soldering Temperature2 TS 260 C Thermal Resistance, Junction to Case3, 4 RJC 10.1 C/W Case Operating Temperature3, 4 TC -40, +150 C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.wolfspeed.com/rf/document-library 3 Measured for the CGH40006S at PDISS = 8 W. 85C TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. The RTH for Cree's demonstration amplifier, CGH40006SAMP1, with 13 (O20 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is 5.1C. The total Rth from the heat sink to the junction is 10.1C +5.1C = 15.2 C/W. 4 Electrical Characteristics (TC = 25C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 132.8 mA Gate Quiescent Voltage VGS(Q) - -2.7 - VDC VDS = 50 V, ID = 800 mA Saturated Drain Current IDS 1.5 2.1 - A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 84 - - VDC VGS = -8 V, ID = 132.8 mA DC Characteristics1 RF Characteristics (TC = 25C, F0 = 5.8 GHz unless otherwise noted) 2 Small Signal Gain GSS 10 11.8 - dB VDD = 28 V, IDQ = 100 mA Power Output at PIN = 30 dBm POUT 5 6.9 - W VDD = 28 V, IDQ = 100 mA Drain Efficiency3 40 53 - % VDD = 28 V, IDQ = 100 mA, PIN = 30 dBm Output Mismatch Stress VSWR - - 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 100 mA, PIN = 32 dBm Input Capacitance CGS - 2.7 - pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS - 0.8 - pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD - 0.1 - pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging 2 Measured in Cree's narrow band production test fixture AD-000291. This fixture is designed for high volume test at 5.8 GHz and may not show the full capability of the device due to source inductance and thermal performance. The demonstration amplifier, CGH40006S-AMP1, is a better indicator of the true RF performance of the device. 3 Drain Efficiency = POUT / PDC Rev 3.3 - July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 3 Typical Performance Small Signal Gain vs Frequency at 28 V of the CGH40006S in the CGH40006S-AMP1 S-parameter 16 14 12 Gain (dB) Gain (dB) 10 8 6 4 CGH40006S - S21 2 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) 4.5 5.0 5.5 6.0 Frequency (GHz) Input & Output Return Losses vs Frequency at S-parameter 28 V of the CGH40006S in the CGH40006S-AMP1 0 -2 -4 -6 Gain (dB) Return Loss (dB) -8 -10 -12 -14 -16 -18 -20 -22 CGH40006S - S11 -24 CGH40006S - S22 -26 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) 4.5 5.0 5.5 6.0 Frequency (GHz) Rev 3.3 - July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 4 Typical Performance Power Gain vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDD =Gain 28 V,vs. IDQPout = 100 mA 20 2.0 GHz 18 3.0 GHz 4.0 GHz 16 5.0 GHz 6.0 GHz Gain (dB) Gain (dB) 14 12 10 8 6 4 2 0 20 22 24 26 28 30 32 34 36 38 40 Output Power (dBm) Output Power (dBm) Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDD = 28 V, IDQ = 100 mA EFF vs output power 70% 2.0 GHz 60% 3.0 GHz 5.0 GHz 50% Drain Efficiency Drain Efficiency 4.0 GHz 6.0 GHz 40% 30% 20% 10% 0% 20 22 24 26 28 30 32 34 36 38 40 Output Power (dBm) Output Power (dBm) Rev 3.3 - July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 5 Typical Performance Power Gain vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDD =vs 28input V, IDQpower = 100 mA Gain 14 12 Gain (dB) Gain (dB) 10 8 6 2.0 GHz 4 3.0 GHz 4.0 GHz 5.0 GHz 2 6.0 GHz 0 10 12 14 16 18 20 22 24 26 28 30 32 34 Input Power (dBm) Input Power (dBm) Drain Efficiency vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDD = 28 V, IDQ = 100 mA Drain Efficiency vs. Pin 100% 2.0 GHz 90% 3.0 GHz 80% 4.0 GHz Drain Efficiency Drain Efficiency 5.0 GHz 70% 6.0 GHz 60% 50% 40% 30% 20% 10% 0% 10 12 14 16 18 20 22 24 26 28 30 32 34 Input Power (dBm) Input Power (dBm) Rev 3.3 - July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 6 Typical Performance Power Gain vs Frequency of the CGH40006S in the CGH40006S-AMP1 at PIN = 32 dBm, VDD = 28 V Gain @ Pin 32 dBm 10 9 8 Gain (dB) Gain (dB) 7 6 5 4 3 2 1 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency (GHz) Frequency (GHz) Output Power vs Frequency of the CGH40006S in the CGH40006S-AMP1 at PIN = 32 dBm, VDD = 28 V Power (w) @ Pin 32 dBm 12 Output Power (W) Output Power (W) 10 8 6 4 2 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency (GHz) Frequency (GHz) Drain Efficiency vs Frequency of the CGH40006S in the CGH40006S-AMP1 at PIN = 32 dBm, VDD = 28 V Drain efficiency @ Pin 32 dBm 70% 50% Drain Efficiency Drain Efficiency 60% 40% 30% 20% 10% 0% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency (GHz) Frequency (GHz) Rev 3.3 - July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 7 Typical Performance Third Order Intermodulation Distortion vs Average Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDDvs = 28 V, output IDQ = 60power mA IM3 Total 0 2.0 GHz -10 3.0 GHz 4.0 GHz 5.0 GHz IM3 (dBc) IM3 (dBc) -20 6.0 GHz -30 -40 -50 -60 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 Output Power (dBm) Output Power (dBm) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A ( > 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Moisture Sensitivity Level (MSL) Classification Parameter Symbol Level Test Methodology Moisture Sensitivity Level MSL 3 (168 hours) IPC/JEDEC J-STD-20 Rev 3.3 - July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 8 Typical Performance K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH40006S VDD = 28 V, IDQ = 100 mA Frequency (GHz) Note: On a 20 mil thick PCB Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006S VDD = 28 V, IDQ = 100 mA Frequency (GHz) Note: On a 20 mil thick PCB Rev 3.3 - July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 9 CGH40006S CW Power Dissipation De-rating Curve Power Dissipation derating Curve vs max Tcase 10 9 Power Dissipation (W) Power Dissipation (W) 8 7 6 5 4 Note 1 3 2 1 0 0 25 50 75 100 125 150 175 200 Maximum Case Temperature (C) Maximum Case Temperature (C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2) Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 1000 12.7 + j20.2 62.3 + j42 2000 5.98 + j6.81 32.7 + j32.9 3000 3.32 - j2.89 19.2 + j29.8 4000 2.38 - j9.45 15.2 + j15.7 5000 2.62 - j15.6 9.98 + j9.6 6000 1.94 - j21.35 8.51 + j2.07 Note 1. VDD = 28 V, IDQ = 100 mA in the 440203 package. Note 2. Optimized for power gain, PSAT and PAE Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. Note 4. 35 pH source inductance is assumed between the package and RF ground (20 mil thick PCB). Rev 3.3 - July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 10 CGH40006S-AMP1 Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, AIN, 0505, 470 Ohms (5% tolerance) 1 R2 RES, AIN, 0505, 50 Ohms (5% tolerance) 1 R3 RES, AIN, 0505, 360 Ohms (5% tolerance) 1 C1 CAP, 1.3 pF +/-0.1 pF, 0603, ATC 600S 1 C2 CAP, 2.7 pF +/-0.25 pF, 0603, ATC 600S 1 C10 CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S 1 C4,C11 CAP, 8.2 pF +/-0.25, 0603, ATC 600S 2 C6,C13 CAP, 470 pF +/-5%, 0603, 100 V 2 C7,C14 CAP, 33000 pF, CER, 100V, X7R, 0805 2 C8 CAP, 10 uf, 16V, SMT, TANTALUM 1 C15 CAP, 1.0 uF +/-10%, CER, 100V, X7R, 1210 1 C16 CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 CONN, SMA, STR, PANEL, JACK, RECP 2 J1 HEADER RT>PLZ .1CEN LK 5POS 1 - PCB, RO5880, 0.020" THK 1 Q1 CGH40006S 1 CGH40006S-AMP1 Demonstration Amplifier Circuit Rev 3.3 - July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 11 CGH40006S-AMP1 Demonstration Amplifier Circuit Schematic CGH40006S-AMP1 Demonstration Amplifier Circuit Outline Rev 3.3 - July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 12 Typical Package S-Parameters for CGH40006S (Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.933 -92.95 18.74 125.47 0.024 38.02 0.459 -48.87 600 MHz 0.922 -104.26 16.89 118.64 0.026 31.70 0.428 -54.78 700 MHz 0.912 -113.77 15.28 112.75 0.028 26.33 0.402 -59.82 800 MHz 0.905 -121.83 13.90 107.61 0.029 21.71 0.381 -64.21 900 MHz 0.899 -128.73 12.70 103.06 0.030 17.68 0.365 -68.10 1.0 GHz 0.894 -134.72 11.67 98.96 0.030 14.11 0.352 -71.62 1.1 GHz 0.891 -139.97 10.77 95.23 0.030 10.91 0.342 -74.86 1.2 GHz 0.888 -144.62 9.99 91.80 0.031 8.00 0.334 -77.87 1.3 GHz 0.886 -148.78 9.31 88.61 0.031 5.34 0.328 -80.72 1.4 GHz 0.884 -152.55 8.71 85.61 0.031 2.88 0.325 -83.43 1.5 GHz 0.883 -155.97 8.17 82.77 0.031 0.58 0.322 -86.03 1.6 GHz 0.881 -159.12 7.69 80.07 0.031 -1.57 0.321 -88.54 1.7 GHz 0.881 -162.04 7.26 77.49 0.031 -3.60 0.321 -90.98 1.8 GHz 0.880 -164.75 6.88 75.00 0.031 -5.53 0.321 -93.35 1.9 GHz 0.879 -167.29 6.53 72.60 0.031 -7.38 0.323 -95.67 2.0 GHz 0.879 -169.68 6.21 70.26 0.031 -9.14 0.325 -97.94 2.1 GHz 0.879 -171.94 5.92 68.00 0.030 -10.83 0.327 -100.17 2.2 GHz 0.879 -174.09 5.65 65.79 0.030 -12.46 0.330 -102.36 2.3 GHz 0.879 -176.14 5.40 63.62 0.030 -14.03 0.334 -104.51 2.4 GHz 0.879 -178.10 5.18 61.51 0.030 -15.55 0.338 -106.63 2.5 GHz 0.879 -179.98 4.97 59.43 0.030 -17.02 0.342 -108.71 2.6 GHz 0.879 178.20 4.77 57.38 0.029 -18.44 0.346 -110.77 2.7 GHz 0.879 176.44 4.59 55.37 0.029 -19.83 0.351 -112.81 2.8 GHz 0.879 174.74 4.42 53.39 0.029 -21.18 0.355 -114.82 2.9 GHz 0.879 173.09 4.26 51.43 0.029 -22.48 0.360 -116.80 3.0 GHz 0.880 171.49 4.11 49.50 0.028 -23.76 0.366 -118.76 3.2 GHz 0.880 168.39 3.84 45.70 0.028 -26.20 0.376 -122.63 3.4 GHz 0.881 165.43 3.60 41.97 0.027 -28.51 0.387 -126.41 3.6 GHz 0.882 162.57 3.38 38.31 0.026 -30.70 0.399 -130.13 3.8 GHz 0.883 159.81 3.19 34.71 0.025 -32.75 0.410 -133.78 4.0 GHz 0.884 157.13 3.01 31.16 0.025 -34.68 0.422 -137.38 4.2 GHz 0.885 154.52 2.85 27.65 0.024 -36.47 0.433 -140.91 4.4 GHz 0.887 151.96 2.71 24.19 0.023 -38.12 0.445 -144.40 4.6 GHz 0.888 149.45 2.57 20.77 0.022 -39.63 0.457 -147.84 4.8 GHz 0.889 146.98 2.45 17.38 0.022 -40.97 0.468 -151.24 5.0 GHz 0.890 144.55 2.33 14.03 0.021 -42.15 0.480 -154.60 5.2 GHz 0.892 142.15 2.23 10.71 0.020 -43.15 0.491 -157.92 5.4 GHz 0.893 139.78 2.13 7.41 0.019 -43.95 0.503 -161.20 5.6 GHz 0.894 137.43 2.04 4.15 0.018 -44.53 0.514 -164.45 5.8 GHz 0.896 135.11 1.95 0.91 0.018 -44.89 0.525 -167.66 6.0 GHz 0.897 132.80 1.87 -2.30 0.017 -45.00 0.535 -170.85 To download the s-parameters in s2p format, go to the CGH40006S Product Page and click on the documentation tab. Note: On a 20 mil thick PCB. Rev 3.3 - July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 13 Product Dimensions CGH40006S (Package Type -- 440203) DIM A A1 A3 b D D1 E E1 e L q M N NE MILLIMETERS MIN 0.80 0 --0.30 ----------0.20 0 --- NOM 0.90 0.02 0.20REF. 0.40 3.00BSC 2.34BSC 3.00BSC 1.57BSC 0.95BSC 0.30 ----- INCHES MAX 1.00 0.05 --0.45 ----------0.45 12 0.05 6 3 MIN 0.032 0 --0.012 ----------0.008 0 --- NOM 0.035 0.0008 0.008REF. 0.016 0.118BSC 0.092BSC 0.118BSC 0.062BSC 0.037BSC 0.012 ----- MAX 0.039 0.002 --0.018 ----------0.018 12 0.002 1 1 2 2 q Rev 3.3 - July 2020 Pin Input/Output 1 GND 2 RF IN 3 GND 4 GND 5 RF OUT 6 GND 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 14 Product Ordering Information Order Number Description Unit of Measure CGH40006S GaN HEMT Each CGH40006S-AMP1 Test board with GaN HEMT installed Each Rev 3.3 - July 2020 Image 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40006S 15 For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@cree.com Notes Disclaimer Specifications are subject to change without notice. "Typical" parameters are the average values expected by Cree in large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree. (c) 2010-2020 Cree, Inc. All rights reserved. Wolfspeed(R) and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev 3.3 - July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com