Rev 3.3 – July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGH40006S
6 W, RF Power GaN HEMT, Plastic
Description
Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40006S, operating from a 28 volt
rail, oers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs oer high eiciency, high gain and
wide bandwidth capabilities making the CGH40006S ideal for linear and
compressed amplier circuits. The transistor is available in a 3mm x
3mm, surface mount, quad-at-no-lead (QFN) package. Package Type: 440203
PN: CGH40006S
Features
• Up to 6 GHz Operation
• 13 dB Small Signal Gain at 2.0 GHz
• 11 dB Small Signal Gain at 6.0 GHz
• 8 W typical at PIN = 32 dBm
• 65% Eiciency at PIN = 32 dBm
• 28 V Operation
• 3mm x 3mm Package
Applications
• 2-Way Private Radio
• Broadband Ampliers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear ampliers suitable for OFDM,
W-CDMA, EDGE, CDMA waveforms
Large Signal Models Available for ADS and MWO
CGH40006S 2
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Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 120 Volts 25˚C
Gate-to-Source Voltage VGS -10, +2 Volts 25˚C
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature T
J175 ˚C
Maximum Forward Gate Current IGMAX 2.1 mA 25˚C
Maximum Drain Current1IDMAX 0.75 A 25˚C
Soldering Temperature2TS260 ˚C
Thermal Resistance, Junction to Case3, 4 RθJC 10.1 ˚C/W 85˚C
Case Operating Temperature3, 4 TC-40, +150 ˚C
Notes:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at
www.wolfspeed.com/rf/document-library
3 Measured for the CGH40006S at PDISS = 8 W.
4 TC = Case temperature for the device. It refers to the temperature at the
ground tab underneath the package. The PCB will add additional thermal
resistance. The RTH for Cree’s demonstration amplier, CGH40006S-
AMP1, with 13 (Ø20 mil) via holes designed on a 20 mil thick Rogers 5880
PCB, is 5.1°C. The total Rth from the heat sink to the junction is 10.1°C
+5.1°C = 15.2 °C/W.
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 132.8 mA
Gate Quiescent Voltage VGS(Q) –-2.7 – VDC VDS = 50 V, ID = 800 mA
Saturated Drain Current IDS 1.5 2.1 – AVDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBR 84 – – VDC VGS = -8 V, ID = 132.8 mA
RF Characteristics2 (TC = 25˚C, F0 = 5.8 GHz unless otherwise noted)
Small Signal Gain GSS 10 11.8 – dB VDD = 28 V, IDQ = 100 mA
Power Output at PIN = 30 dBm POUT 5 6.9 – W VDD = 28 V, IDQ = 100 mA
Drain Eiciency3η40 53 – % VDD = 28 V, IDQ = 100 mA, PIN = 30 dBm
Output Mismatch Stress VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V,
IDQ = 100 mA, PIN = 32 dBm
Dynamic Characteristics
Input Capacitance CGS – 2.7 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance CDS – 0.8 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance CGD – 0.1 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging
2 Measured in Cree’s narrow band production test xture AD-000291. This xture is designed for high volume test at 5.8 GHz and may not show the full
capability of the device due to source inductance and thermal performance. The demonstration amplier, CGH40006S-AMP1, is a better indicator of the
true RF performance of the device.
3 Drain Eiciency = POUT / PDC
CGH40006S 3
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Typical Performance
Small Signal Gain vs Frequency at 28 V
of the CGH40006S in the CGH40006S-AMP1
Gain (dB)
Input & Output Return Losses vs Frequency at
28 V of the CGH40006S in the CGH40006S-AMP1
Return Loss (dB)
Frequency (GHz)
Frequency (GHz)
-
12
-10
-8
-6
-4
-2
0
Gain (dB)
S-parameter
-26
-24
-22
-20
-18
-16
-14
-
12
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Gain (dB)
Frequency (GHz)
CGH40006S - S11
CGH40006S - S22
10
12
14
16
Gain (dB)
S-parameter
0
2
4
6
8
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Gain (dB)
Frequency (GHz)
CGH40006S - S21
CGH40006S 4
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Typical Performance
Power Gain vs Output Power as a Function of Frequency
of the CGH40006S in the CGH40006S-AMP1
VDD = 28 V, IDQ = 100 mA
Gain (dB)
Drain Eiciency vs Output Power as a Function of Frequency
of the CGH40006S in the CGH40006S-AMP1
VDD = 28 V, IDQ = 100 mA
Drain Eiciency
Output Power (dBm)
Output Power (dBm)
12
14
16
18
20
Gain (dB)
Gain vs. Pout
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
0
2
4
6
8
10
20 22 24 26 28 30 32 34 36 38 40
Gain (dB)
Output Power (dBm)
40%
50%
60%
70%
EFF vs output power
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
0%
10%
20%
30%
20 22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
CGH40006S 5
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Typical Performance
Power Gain vs Input Power as a Function of Frequency
of the CGH40006S in the CGH40006S-AMP1
VDD = 28 V, IDQ = 100 mA
Gain (dB)
Drain Eiciency vs Input Power as a Function of Frequency
of the CGH40006S in the CGH40006S-AMP1
VDD = 28 V, IDQ = 100 mA
Drain Eiciency
Input Power (dBm)
Input Power (dBm)
8
10
12
14
Gain (dB)
Gain vs input power
0
2
4
6
10 12 14 16 18 20 22 24 26 28 30 32 34
Gain (dB)
Input Power (dBm)
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
60%
70%
80%
90%
100%
Drain Efficiency
Drain Efficiency vs. Pin
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
0%
10%
20%
30%
40%
50%
10 12 14 16 18 20 22 24 26 28 30 32 34
Drain Efficiency
Input Power (dBm)
CGH40006S 6
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Typical Performance
Power Gain vs Frequency of the CGH40006S
in the CGH40006S-AMP1 at PIN = 32 dBm, VDD = 28 V
Gain (dB)
Frequency (GHz)
40%
50%
60%
70%
Drain Efficiency
Drain efficiency @ Pin 32 dBm
0%
10%
20%
30%
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Drain Efficiency
Frequency (GHz)
6
7
8
9
10
Gain (dB)
Gain @ Pin 32 dBm
0
1
2
3
4
5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Gain (dB)
Frequency (GHz)
Output Power vs Frequency of the CGH40006S
in the CGH40006S-AMP1 at PIN = 32 dBm, VDD = 28 V
Output Power (W)
Frequency (GHz)
Drain Eiciency vs Frequency of the CGH40006S
in the CGH40006S-AMP1 at PIN = 32 dBm, VDD = 28 V
Drain Eiciency
Frequency (GHz)
8
10
12
Output Power (W)
Power (w) @ Pin 32 dBm
0
2
4
6
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Output Power (W)
Frequency (GHz)
CGH40006S 7
Rev 3.3 – July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
Typical Performance
Third Order Intermodulation Distortion vs Average Output Power
as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1
VDD = 28 V, IDQ = 60 mA
IM3 (dBc)
Output Power (dBm)
-20
-10
0
IM3 (dBc)
IM3 vs Total output power
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
-60
-50
-40
-30
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
IM3 (dBc)
Output Power (dBm)
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A ( > 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C
Moisture Sensitivity Level (MSL) Classification
Parameter Symbol Level Test Methodology
Moisture Sensitivity Level MSL 3 (168 hours) IPC/JEDEC J-STD-20
CGH40006S 8
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Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH40006S
VDD = 28 V, IDQ = 100 mA
MAG (dB)
Simulated Minimum Noise Figure and Noise Resistance
vs Frequency of the CGH40006S
VDD = 28 V, IDQ = 100 mA
Minimum Noise Figure (dB)
Frequency (GHz)
K Factor
Note: On a 20 mil thick PCB
Frequency (GHz)
Noise Resistance (Ohms)
Note: On a 20 mil thick PCB
Typical Noise Performance
CGH40006S 9
Rev 3.3 – July 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150 175 200
Power Dissipation (W)
Maximum Case Temperature (°C)
Power Dissipation derating Curve vs max Tcase
CGH40006S CW Power Dissipation De-rating Curve
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2)
Power Dissipation (W)
Maximum Case Temperature (°C)
Note 1
D
Z Source Z Load
G
S
Frequency (MHz) Z Source Z Load
1000 12.7 + j20.2 62.3 + j42
2000 5.98 + j6.81 32.7 + j32.9
3000 3.32 - j2.89 19.2 + j29.8
4000 2.38 - j9.45 15.2 + j15.7
5000 2.62 - j15.6 9.98 + j9.6
6000 1.94 - j21.35 8.51 + j2.07
Source and Load Impedances
Note 1. VDD = 28 V, IDQ = 100 mA in the 440203 package.
Note 2. Optimized for power gain, PSAT and PAE
Note 3. When using this device at low frequency, series resistors should be used to maintain amplier stability.
Note 4. 35 pH source inductance is assumed between the package and RF ground (20 mil thick PCB).
CGH40006S 10
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CGH40006S-AMP1 Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
R1 RES, AIN, 0505, 470 Ohms (≤5% tolerance) 1
R2 RES, AIN, 0505, 50 Ohms (≤5% tolerance) 1
R3 RES, AIN, 0505, 360 Ohms (≤5% tolerance) 1
C1 CAP, 1.3 pF +/-0.1 pF, 0603, ATC 600S 1
C2 CAP, 2.7 pF +/-0.25 pF, 0603, ATC 600S 1
C10 CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S 1
C4,C11 CAP, 8.2 pF +/-0.25, 0603, ATC 600S 2
C6,C13 CAP, 470 pF +/-5%, 0603, 100 V 2
C7,C14 CAP, 33000 pF, CER, 100V, X7R, 0805 2
C8 CAP, 10 uf, 16V, SMT, TANTALUM 1
C15 CAP, 1.0 uF +/-10%, CER, 100V, X7R, 1210 1
C16 CAP, 33 uF, 100V, ELECT, FK, SMD 1
J3,J4 CONN, SMA, STR, PANEL, JACK, RECP 2
J1 HEADER RT>PLZ .1CEN LK 5POS 1
- PCB, RO5880, 0.020” THK 1
Q1 CGH40006S 1
CGH40006S-AMP1 Demonstration Amplifier Circuit
CGH40006S 11
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CGH40006S-AMP1 Demonstration Amplifier Circuit Schematic
CGH40006S-AMP1 Demonstration Amplifier Circuit Outline
CGH40006S 12
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Typical Package S-Parameters for CGH40006S
(Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0.933 -92.95 18.74 125.47 0.024 38.02 0.459 -48.87
600 MHz 0.922 -104.26 16.89 118.64 0.026 31.70 0.428 -54.78
700 MHz 0.912 -113.77 15.28 112.75 0.028 26.33 0.402 -59.82
800 MHz 0.905 -121.83 13.90 107.61 0.029 21.71 0.381 -64.21
900 MHz 0.899 -128.73 12.70 103.06 0.030 17.68 0.365 -68.10
1.0 GHz 0.894 -134.72 11.67 98.96 0.030 14.11 0.352 -71.62
1.1 GHz 0.891 -139.97 10.77 95.23 0.030 10.91 0.342 -74.86
1.2 GHz 0.888 -144.62 9.99 91.80 0.031 8.00 0.334 -77.87
1.3 GHz 0.886 -148.78 9.31 88.61 0.031 5.34 0.328 -80.72
1.4 GHz 0.884 -152.55 8.71 85.61 0.031 2.88 0.325 -83.43
1.5 GHz 0.883 -155.97 8.17 82.77 0.031 0.58 0.322 -86.03
1.6 GHz 0.881 -159.12 7.69 80.07 0.031 -1.57 0.321 -88.54
1.7 GHz 0.881 -162.04 7.26 77.49 0.031 -3.60 0.321 -90.98
1.8 GHz 0.880 -164.75 6.88 75.00 0.031 -5.53 0.321 -93.35
1.9 GHz 0.879 -167.29 6.53 72.60 0.031 -7.38 0.323 -95.67
2.0 GHz 0.879 -169.68 6.21 70.26 0.031 -9.14 0.325 -97.94
2.1 GHz 0.879 -171.94 5.92 68.00 0.030 -10.83 0.327 -100.17
2.2 GHz 0.879 -174.09 5.65 65.79 0.030 -12.46 0.330 -102.36
2.3 GHz 0.879 -176.14 5.40 63.62 0.030 -14.03 0.334 -104.51
2.4 GHz 0.879 -178.10 5.18 61.51 0.030 -15.55 0.338 -106.63
2.5 GHz 0.879 -179.98 4.97 59.43 0.030 -17.02 0.342 -108.71
2.6 GHz 0.879 178.20 4.77 57.38 0.029 -18.44 0.346 -110.77
2.7 GHz 0.879 176.44 4.59 55.37 0.029 -19.83 0.351 -112.81
2.8 GHz 0.879 174.74 4.42 53.39 0.029 -21.18 0.355 -114.82
2.9 GHz 0.879 173.09 4.26 51.43 0.029 -22.48 0.360 -116.80
3.0 GHz 0.880 171.49 4.11 49.50 0.028 -23.76 0.366 -118.76
3.2 GHz 0.880 168.39 3.84 45.70 0.028 -26.20 0.376 -122.63
3.4 GHz 0.881 165.43 3.60 41.97 0.027 -28.51 0.387 -126.41
3.6 GHz 0.882 162.57 3.38 38.31 0.026 -30.70 0.399 -130.13
3.8 GHz 0.883 159.81 3.19 34.71 0.025 -32.75 0.410 -133.78
4.0 GHz 0.884 157.13 3.01 31.16 0.025 -34.68 0.422 -137.38
4.2 GHz 0.885 154.52 2.85 27.65 0.024 -36.47 0.433 -140.91
4.4 GHz 0.887 151.96 2.71 24.19 0.023 -38.12 0.445 -144.40
4.6 GHz 0.888 149.45 2.57 20.77 0.022 -39.63 0.457 -147.84
4.8 GHz 0.889 146.98 2.45 17.38 0.022 -40.97 0.468 -151.24
5.0 GHz 0.890 144.55 2.33 14.03 0.021 -42.15 0.480 -154.60
5.2 GHz 0.892 142.15 2.23 10.71 0.020 -43.15 0.491 -157.92
5.4 GHz 0.893 139.78 2.13 7.41 0.019 -43.95 0.503 -161.20
5.6 GHz 0.894 137.43 2.04 4.15 0.018 -44.53 0.514 -164.45
5.8 GHz 0.896 135.11 1.95 0.91 0.018 -44.89 0.525 -167.66
6.0 GHz 0.897 132.80 1.87 -2.30 0.017 -45.00 0.535 -170.85
To download the s-parameters in s2p format, go to the CGH40006S Product Page and click on the documentation tab.
Note: On a 20 mil thick PCB.
CGH40006S 13
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Product Dimensions CGH40006S (Package Type — 440203)
Pin Input/Output
1GND
2RF IN
3 GND
4GND
5RF OUT
6GND
MIN
E1
q
M
L
e
q
A1
A3
D
b
E
D1
A
DIM
---
1.57BSC
--- ------
0.05
------
0.30
0.95BSC
0.20
---
---
0
0.45
---
12
0.05
00.02
2.34BSC
---
3.00BSC
0.40
0.20REF.
3.00BSC
0.30
---
---
0.45
---
MILLIMETERS
NOM
0.900.80
MAX
1.00
---
0.062BSC
---
0.002
------
0.012
0.037BSC
0.008
---
---
0
0.018
---
12
0.092BSC
---
0.118BSC
0.016
0.008REF.
0.118BSC
0.012
---
---
0.018
---
MIN
0.002
00.0008
INCHES
NOM
0.0350.032
MAX
0.039
1
2
1
2
N6
NE 3
---
---
---
---
---
---
---
---
CGH40006S 14
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Product Ordering Information
Order Number Description Unit of Measure Image
CGH40006S GaN HEMT Each
CGH40006S-AMP1 Test board with GaN HEMT installed Each
CGH40006S 15
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Notes
Disclaimer
Specications are subject to change without notice. “Typical” parameters are the average values expected by Cree in
large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use
as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would
reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringe-
ment of patents or other rights of third parties which may result from use of the information contained herein. No license
is granted by implication or otherwise under any patent or patent rights of Cree.
© 2010-2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@cree.com