SPICE MODELS: MMBF170 MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * Low On-Resistance A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed B Low Input/Output Leakage C G TOP VIEW S Available in Lead Free/RoHS Compliant Version (Note 2) D E G Mechanical Data H * * Case: SOT-23 * * * * Moisture Sensitivity: Level 1 per J-STD-020C * * * SOT-23 D K J Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 M L Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 0.10 J 0.013 Terminals: Solderable per MIL-STD-202, Method 208 K 0.903 1.10 Terminal Connections: See Diagram L 0.45 0.61 M 0.085 0.180 a 0 8 Drain Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 6, on Page 2. Gate All Dimensions in mm Marking: (See Page 2) K6Z Source Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Symbol MMBF170 Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS 1.0MW VDGR 60 V Gate-Source Voltage Continuous Pulsed VGSS 20 40 V Drain Current (Note 1) Continuous Pulsed ID 500 800 mA Pd 300 1.80 mW mW/C RqJA 417 K/W Tj, TSTG -55 to +150 C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30104 Rev. 6 - 2 1 of 3 www.diodes.com MMBF170 a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 60 70 3/4 V VGS = 0V, ID = 100mA Zero Gate Voltage Drain Current IDSS 3/4 3/4 1.0 A VDS = 60V, VGS = 0V Gate-Body Leakage IGSS 3/4 3/4 10 nA VGS = 15V, VDS = 0V 3.0 V VDS = VGS, ID = 250mA VGS = 10V, ID = 200mA OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 3) VGS(th) 0.8 2.1 RDS (ON) 3/4 3/4 5.0 W gFS 80 3/4 3/4 mS Input Capacitance Ciss 3/4 22 40 pF Output Capacitance Coss 3/4 11 30 pF Reverse Transfer Capacitance Crss 3/4 2.0 5.0 pF Turn-On Delay Time tD(ON) 3/4 3/4 10 ns Turn-Off Delay Time tD(OFF) 3/4 3/4 10 ns Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 10V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Notes: 3. Short duration test pulse used to minimize self-heating effect. Ordering Information Notes: VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50W (Note 4) Device Packaging Shipping MMBF170-7 SOT-23 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant Version part number, please add "-F" suffix to the part number above. Example: MMBF170-7-F. K6Z YM Marking Information K6Z = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30104 Rev. 6 - 2 2 of 3 www.diodes.com MMBF170 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 0.8 0.6 Tj = 25C 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 1.0 5.5V 5.0V 0.4 0.2 2.1V 0 0 1 5 VGS = 5.0V 4 3 VGS = 10V 2 1 0 0 3 2 6 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.4 0.2 5 4 1.5 VGS = 10V, ID = 0.5A VGS = 5.0V, ID = 0.05A 1.0 0.5 5 4 3 2 1 0 0 -55 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs Junction Temperature ID = 500mA ID = 50mA 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 5, Max Power Dissipation vs Ambient Temperature DS30104 Rev. 6 - 2 3 of 3 www.diodes.com MMBF170