DS30104 Rev. 6 - 2 1 of 3 MMBF170
www.diodes.com ã Diodes Incorporated
MMBF170
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·Low On-Resistance
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Low Input/Output Leakage
·Available in Lead Free/RoHS Compliant Version (Note 2)
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Symbol MMBF170 Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS £ 1.0MWVDGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 1) Continuous
Pulsed ID500
800 mA
Total Power Dissipation (Note 1) Pd300
1.80
mW
mW/°C
Thermal Resistance, Junction to Ambient RqJA 417 K/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Terminal Connections: See Diagram
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2.
·Marking: (See Page 2) K6Z
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approximate)
Mechanical Data
A
E
JL
TOP VIEW
M
BC
H
G
D
K
D
GS
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Source
Gate
D
ra
i
n
SPICE MODELS: MMBF170
DS30104 Rev. 6 - 2 2 of 3 MMBF170
www.diodes.com
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage BVDSS 60 70 ¾VVGS = 0V, ID = 100mA
Zero Gate Voltage Drain Current IDSS ¾¾1.0 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ¾¾±10 nA VGS = ±15V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) 0.8 2.1 3.0 V VDS =V
GS, ID = 250mA
Static Drain-Source On-Resistance RDS (ON) ¾¾5.0 WVGS = 10V, ID = 200mA
Forward Transconductance gFS 80 ¾¾mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾22 40 pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾11 30 pF
Reverse Transfer Capacitance Crss ¾2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾¾10 ns VDD = 25V, ID= 0.5A,
VGS = 10V, RGEN = 50W
Turn-Off Delay Time tD(OFF) ¾¾10 ns
Electrical Characteristics @ TA = 25°C unless otherwise specified
Ordering Information (Note 4)
Device Packaging Shipping
MMBF170-7 SOT-23 3000/Tape & Reel
Notes: 3. Short duration test pulse used to minimize self-heating effect.
Marking Information
K6Z
YM
K6Z = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant Version part number, please add "-F" suffix to the part number above. Example: MMBF170-7-F.
DS30104 Rev. 6 - 2 3 of 3 MMBF170
www.diodes.com
0
0.2
0.4
0.6
0.8
1
.
0
01 2 345
V,DRAIN-SOURCE VOLTAGE (V)
DS
Fi
g
. 1 On-Re
g
ion Characteristics
V = 10V
GS
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
5.5V
10V
2.1V
5.0V
I,DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
0 0.2
R , NORMALIZED
DS(ON)
DRAIN-SOURCE ON-RESISTANCE
I , DRAIN CURRENT (A)
D
Fi
g
. 2 On-Resistance vs Drain Current
V = 5.0V
GS
T = 25°C
j
V = 10V
GS
6
7
0.4 0.6 0.8 1.0
0
V , GATE TO SOURCE VOLTAGE (V)
GS
Fi
g
. 4 On-Resistance vs. Gate-Source Volta
g
e
I = 50mA
D
I = 500mA
D
1
2
3
4
5
6
024681012141618
R , NORMALIZED
DS(ON)
DRAIN-SOURCE ON-RESISTANCE
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45 70 95 120 145
R,N
O
RMALIZED
DS(ON)
DRAIN-SOURCE ON-RESISTANCE
T , JUNCTION TEMPERATURE (°C)
j
Fig. 3 On-Resistance vs Junction Temperature
V = 10V, I = 0.5A
GS D
V = 5.0V, I = 0.05A
GS D
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 5, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
0
