T4-LDS-0267, Rev. 1 (120963) ©2012 Microsemi Corporation Page 1 of 4
MC5610 thru MC5619
Available FAST RECOVERY, HIGH POWE R, MICRO
HIGH VOLTAGE RECTIFI ERS
DESCRIPTION
The MC5610 thr ough MC5619 series of fas t rec overy high voltage sili con r ectifiers featu r e the
smal l est pac kag es available. They are ideal for high -rel iabi lity wher e a failure cannot be
t ol er ated. Th ese 0 .27 5 to 0. 790 amp r ated rectifiers for wor king peak r everse volt ages from
1500 t o 5000 volts are hermetical ly sealed wit h void-less glass constru ct ion. Typical
applications inc lude transmitters, power sup pli es, r adar equipmen t and X-ray machines .
S urfac e mount MELF package configurat ions are als o av ai lable by ad ding “US” suffix.
Microsemi al so o ffers numerou s other recti fi er products to meet higher and lower cur r ent
ratings with various recovery t i me sp eed requ irements including fas t and ul trafast device types
in both through-hole and surface mount pac kag es.
S Package
Important: For the latest information, visit o ur we bsit e http://www.microsemi.com.
FEATURES
• Void-l ess hermetically sealed glass package.
• Triple-layer passivation.
• Lowest reverse leak age available.
• Absolute high voltage / high temperature stability.
• RoHS compliant versions av ailable.
APPL ICAT IONS / BENEFITS
• High voltage standard recovery rectifiers 1500 to 5,000 volts.
• Military and other high-reliability applications.
• Applicati ons include bridges, half-bridges, catch diodes, voltage multipliers, X-ray machines, power
supplies, transmitters, and radar equipment.
• High forward surge current capability.
• Extremely robust construction.
• Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RAT ING S
@ TA= 25
o
C unless otherwise specified
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction Temperature MC5610 – MC5612
MC5613 – MC5616
MC5617 – MC5619
TJ -55 to +150
-65 to +150
-65 to +125
o
C
Storage Temperature TSTG -65 to +175
o
C
Thermal Resistance Junction-to-Lead @ 3/8 inch
(10 mm ) lead length from body RӨJL 38 oC/W
Working Peak Reverse Voltage: MC5610 & MC5613
MC5611 & MC5614
MC5612 & MC5615
MC5616
MC5617
MC5618
MC5619
VRWM
1500
2000
2500
3000
4000
4500
5000
V
Solder Temperature @ 10 s TSP 260
o
C
T4-LDS-0267, Rev. 1 (120963) ©2012 Microsemi Corporation Page 2 of 4
MC5610 thru MC5619
• CASE: Hermetically sealed void-less hard glass w ith tungsten slugs.
• TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin over copper.
• MARKING: Alphanumeric.
• POLARITY: Cathode indicated by band.
• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities .
• WEIGHT: 400 milligrams (approx).
• See Package Dimensions on last page.
MC 5610 (e3)
Micro Class – High Voltage
Rectifier
Type Number
(See Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
SYM BOLS & DEFINITIONS
Symbol
Definition
IO
Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz s ine-wave
input and a 180 degree conduction angle.
IR
Maximum Leakage Current: The maxim um leakage current that will flow at the specified voltage and temperature.
IZSM
Maximum Rated Surge Current: The non-repetitive peak value of rated surge current at a speci fied wave form.
V(BR)
Minimum Breakdown Voltage: The m inimum voltage the device will exhibit at a specifi ed cur rent.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
VR
Reverse Voltage: The reverse voltage dc value, no alternating component.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
MICROSEMI
PART
NUMBER
RMS
VOLTAGE
VR(RMS)
AVERAGE
RECTIFIED
CURRENT
IO @ TL =
(Note 2)
MAXIMUM
FORWARD
VOLTAGE
VF @ 100 mA
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
MAXIMUM
FORWARD
SURGE
IFS @ 8.3
ms
MAXIMUM
REVERSE
RECOVERY
TIME
trr
(Note 1)
55 oC
100 oC
25 oC
100 oC
Volts
mA
mA
Volts
µA
µA
Amps
ns
MC5610
MC5611
MC5612
1050
1400
1750
790
630
530
415
330
280
3.0
4.0
5.0
1.0
1.0
1.0
25
25
25
8
6
5
300
300
300
MC5613
MC5614
MC5615
MC5616
1050
1400
1750
2100
975
790
665
570
515
415
350
300
3.0
4.0
5.0
6.0
1.0
1.0
1.0
1.0
20
20
20
20
8
6
5
4
300
300
300
300
MC5617
MC5618
MC5619
2800
3150
3500
330
300
275
120
110
100
8.0
9.0
10.0
2.5
2.5
2.5
50
50
50
3
2.7
2.5
300
300
300
NOTE 1: IF = 50 mA, IRM = 100 mA, IR(REC) = 25 mA.
NOTE 2: Heat sink 3/8” fr om body.
T4-LDS-0267, Rev. 1 (120963) ©2012 Microsemi Corporation Page 3 of 4
MC5610 thru MC5619
TL - LEAD TEMPERATURE
FIGURE 1
A verage Rectified Current vs. Lead Temp er ature
Lead Temperature (°C) (L =3/8 inch)
IO (mA)
T4-LDS-0267, Rev. 1 (120963) ©2012 Microsemi Corporation Page 4 of 4
MC5610 thru MC5619
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general informati on only.
3. Package contour optional with BD and length BL. Heat sl ugs, if any,
shall be in cluded within th is cylinder length but shall not be subject to
m inimum limit of BD.
4. The specified lead diameters apply i n the zone between .050 inch
(1.27 mm) from the diode body and the end of the lead.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
DIMENSIONS
Ltr
INCH
MILLIMETERS
Notes
Min
Max
Min
Max
BD
.065
.110
1.65
2.79
3
BL
.190
.215
4.83
5.46
3
LD
.029
.033
0.74
0.84
LL
1.00
1.25
25.40
31.75
LU
.050
1.27
4