STA508A
4/10
Table 6. Absolute Maximum Ratings
Table 7. Electrical Characteristcs (V
L
= 3.3V; VCC = 30V; Tamb = 25°C; fsw = 384KHz; unless othewise
specified)
Symbol Parameter Value Unit
VCC DC Supply Voltage (Pin 4,7,12,15) 45 V
Vmax Maximum Voltage on pins 23 to 32 5.5 V
Ptot Power Dissipation (Tcase = 70°C) 50 W
Top Operating Temperature Range 0 to 70 °C
Tstg, TjStorage and Junction Temperature -40 to 150 °C
Symbol Parameter Test conditions Min. Typ. Max. Unit
RdsON Power Pchannel/Nchannel
MOSFET RdsON
Id=1A 200 270 mΩ
Idss Power Pchannel/Nchannel
leakage Idss
VCC =35V 50 µA
gNPower Pchannel RdsON Matching Id=1A 95 %
gPPower Nchannel RdsON
Matching
Id=1A 95 %
Dt_s Low current Dead Time (static) see test circuit no.1; see fig. 4 10 20 ns
Dt_d High current Dead Time (dinamic) L=22µH; C = 470nF; RL = 8 Ω
Id=3.5A; see fig. 3
50 ns
td ON Turn-on delay time Resistive load 100 ns
td OFF Turn-off delay time Resistive load 100 ns
trRise time Resistive load; as fig.4 25 ns
tfFall time Resistive load; as fig. 4 25 ns
VCC Supply voltage operating voltage 10 40 V
VIN-H High level input voltage V
L
/2
+300mV
V
VIN-L Low level input voltage V
L
/2
-
300mV
V
IIN-H Hi level Input current Pin Voltage = V
L
1µA
IIN-L Low level input current Pin Voltage = 0.3V 1 µA
I
PWRDN-H
High level PWRDN pin input
current
V
L
= 3.3V 35 µA
VLow Low logical state voltage VL (pin
PWRDN, TRISTATE) (note 1)
V
L
= 3.3V 0.8 V