© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 50 - 800V > 2N6394
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1)
(TJ = -40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
2N6394
2N6395
2N6397
2N6399
VDRM,
VRRM
50
100
400
800
V
On-State RMS Current
(180° Conduction Angles; TC = 90°C) IT (RMS) 12 A
Peak Non−Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 90°C) ITSM 100 A
Circuit Fusing Considerations (t = 8.3 ms) I2t 40 A²s
Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 90°C) PGM 20 W
Forward Average Gate Power (t = 8.3 ms, TC = 90°C) PG(AV) 0.5 W
Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 90°C) IGM 2.0 A
Operating Junction Temperature Range TJ-40 to +125 °C
Storage Temperature Range Tstg -40 to +125 °C
Maximum Ratings † (TJ = 25°C unless otherwise noted)
†Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Maximum Ratings † (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Thermal Resistance, Junction to Case R8JC 2.0 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds TL260 °C
† Indicates JEDEC Registered Data..