5962-8872608LA - e2v - Datasheet.Directory

REVISIONS

LTR DESCRIPTION DATE (YR-MO-DA) APPROVED

A

Add case outline U. Add vendor cage 18325. Add programming method B.

Changes 4.3.1c and 4.3.1e. Editorial changes throughout.

89-03-01

W. Heckman

B

Add device type 02, editorial changes throughout. Add test circuit to figure 3.

Add vendor CAGE 34649 for case outline U.

90-03-09

W. Heckman

C

Add symbols, definitions, and functional descriptions. Convert to one part -

one part number format.

91-02-14

W. Heckman

D

Changes in accordance with NOR 5962-R231-92.

92-07-16

M. Poelking

E

Add device types 03 - 06. Add case outlines X, Y. Editorial changes

throughout.

96-01-02

M. Poelking

F

Add paragraph 6.7 PIN supersession information. Update boilerplate to

MIL-PRF-38535 requirements. - LTG

04-09-03

Thomas M. Hess

G

Add device types 07 and 08. Update boilerplate to current MIL-PRF-38535

requirements. - CFS

07-02-09

Thomas M. Hess

H

Add QD device criteria to paragraphs 3.1 and 3.5.1. - CFS

07-09-04

Thomas M. Hess

REV

SHEET

REV G G G G G G G G G G G G G G G

SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29

REV STATUS REV H G G H H G G G G G G G G G

OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14

PMIC N/A PREPARED BY

Thomas M. Hess

DEFENSE SUPPLY CENTER COLUMBUS

STANDARD

MICROCIRCUIT

DRAWING

CHECKED BY

Thomas M. Hess

COLUMBUS, OHIO 43218-3990

http://www.dscc.dla.mil

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

APPROVED BY

Monica L. Poelking

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

DRAWING APPROVAL DATE

23 July 1987

MICROCIRCUIT, DIGITAL, 8-BIT CHMOS

MICROCONTROLLER WITH 4K BYTES

EPROM MEMORY, MONOLITHIC SILICON

AMSC N/A

REVISION LEVEL

H SIZE

A CAGE CODE

67268 5962-87684

SHEET

1 OF

29

DSCC FORM 2233

APR 97 5962-E615-07

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G SHEET 2

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APR 97

1. SCOPE

1.1 Scope. This drawing documents three product assurance class levels consisting of space application (device class V),

high reliability (device classes M and Q), and nontraditional performance environment (device class N). A choice of case

outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of

Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class N, the user is cautioned to assure that

the device is appropriate for the application environment.

1.2 PIN. The PIN is as shown in the following example:

5962 - 87684 01 M X X

Federal

stock class

designator

RHA

designator

(see 1.2.1)

Device

type

(see 1.2.2)

Device

class

designator

Case

outline

(see 1.2.4)

Lead

finish

(see 1.2.5)

\ / (see 1.2.3)

\/

Drawing number

1.2.1 RHA designator. Device classes N, Q, and V RHA marked devices meet the MIL-PRF - 38535 specified RHA levels and

are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A

specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

1.2.2 Device type(s). The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function Temperature range

01 87C51 8-bit microcontroller with 4k-byt es -55°C to 125°C

EPROM memory. (3.5 to 12MHz)

02 87C51-16 8-bit microcontroller with 4k-bytes -55°C to 125°C

EPROM memory. (3.5 to 16MHz)

03 87C51 8-bit microcontroller with one time -40°C to 85°C

programmable memory. (3.5 to 12MHz)

04 87C51-16 8-bit microcontroller with one time -40°C to 85°C

programmable memory. (3.5 to 16MHz)

05 87C51 8-bit microcontroller with one time -55°C to 125°C

programmable memory. (3.5 to 12MHz)

06 87C51-16 8-bit microcontroller with one time -55°C to 125°C

programmable memory. (3.5 to 16MHz)

07 87C51 8-bit microcontroller with 4k-bytes one time -55°C to 125°C

programmable memory. (3.5 to 12MHz)

08 87C51-16 8-bit microcontroller with 4k-byt es one time -55°C to 125°C

programmable memory. (3.5 to 16MHz)

1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as

follows:

Device class Device requirements documentation

M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-

JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A

N Certification and qualification to MIL-PRF-38535 with a nontraditional

performance environment (encapsulated in plastic)

Q or V Certification and qualification to MIL-PRF-38535

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1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835, JEDEC Publication 95, and as follows:

Outline letter Descriptive designator Terminals Package style Document

U CQCC1-N44 44 Square leadless chip carrier 1/ MIL-STD-1835

Q CDIP2-T40 or GDIP1-T40 40 Dual-in-line 1/ MIL-STD-1835

M GQCC1-J44 44 J-leaded chip carrier 1/ MIL-STD-1835

X See figure 1 40 Plastic dual-in-line JEP 95

Y See figure 1 44 Plastic J-leaded chip carrier JEP 95

1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes N, Q, and V or MIL-PRF-38535,

appendix A for device class M.

1.3 Absolute maximum ratings. 2/

Storage temperature range ....................................................................... -65°C to +150°C

Voltage on EA/VPP pin to VSS .................................................................... 0 V dc to +13.0 V dc

Voltage on any pin to VSS .......................................................................... -0.5 V dc to +6.5 V dc

Power dissipation (PD) ............................................................................... 1.5 W

Maximum junction temperature (TJ) ........................................................... +200°C

Lead temperature (soldering, 10 seconds) ................................................. +300°C

Thermal resistance, junction-to-case (θJC):

Cases U, Q, and M ................................................................................ See MIL-STD-1835

Case X ................................................................................................... 15°C/W

Case Y ................................................................................................... 14°C/W

1.4 Recommended operating conditions.

Supply voltage (VCC)................................................................................... 5.0 V dc ±10%

Case operating temperature range (TC)

Devices 01, 02, 05, 06, 07, 08................................................................. -55°C to +125°C

Devices 03, 04......................................................................................... -40°C to +85°C

Maximum input low voltage (except EA) .................................................... 0.2VCC - 0.25 V

Maximum input low voltage (EA)................................................................. 0.2VCC - 0.45 V

Minimum input high voltage (except XTAL1, RESET)................................. 0.2VCC + 1.1 V

Minimum input high voltage (XTAL1 & RESET) ......................................... 0.7VCC + 0.2 V

________

1/ For device types 01 and 02 only, the lid shall be transparent to permit ultraviolet light erasure.

2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability.

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APR 97

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part

of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the

solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATION

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 - Test Method Standard Microcircuits.

MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.

DEPARTMENT OF DEFENSE HANDBOOKS

MIL-HDBK-103 - List of Standard Microcircuit Drawings.

MIL-HDBK-780 - Standard Microcircuit Drawings.

(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the

Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein.

Unless otherwise specified, the issues of these documents are those cited in the solicitation.

ELECTRONICS INDUSTRIES ALLIANCE (EIA)

JEP 95 - Registered and Standard Outlines for Semiconductor Devices

(Copies of this document are available online at www.eia.org/ or from the Electronics Industries Alliance, 2500 Wilson

Boulevard, Arlington, VA 22201-3834).

2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of

this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENT S

3.1 Item requirements. T he individual item requirements for device classes N, Q, and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

herein. This drawing has been modified to allow the manufacturer to use the alternate die/fabrication requirements of paragraph

A.3.2.2 of MIL-PRF-38535 or other alternative approved by the qualifying activity.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in

MIL-PRF-38535 and herein for device classes N, Q, and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.

3.2.3 Block diagram. The block diagram shall be as specified on figure 3.

3.2.4 T est circuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figure 4.

3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full

case operating temperature range.

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3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. T he electrical

tests for each subgroup are defined in table I.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer

has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be

marked. Marking for device classes N, Q, and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall

be in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes N, Q, and V shall be a "QML" or "Q" as

required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.

For product built in accordance with A.3.2.2 of MIL-PRF - 38535, or as modified in the manufacturer’s QM plan, the “QD”

certification mark shall be used in place of the “Q” or “QML” certification mark.

3.6 Certificate of compliance. For device classes N, Q, and V, a certificate of compliance shall be required from a

QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a

certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in

MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of

supply for this drawing shall affirm that the manufacturer's product meets, for device classes N, Q, and V, the requirements of

MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes N, Q, and V in MIL-PRF-38535 or

for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2

herein) involving devices acquired to this drawing is required for any change that affects this drawing.

3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the

option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made

available onshore at the option of the reviewer.

3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

microcircuit group number 105 (see MIL-PRF-38535, appendix A).

3.11 Processing EPROMS. All testing requirements and quality assurance provisions herein shall be satisfied by the

manufacturer prior to delivery.

3.11.1 Erasure of EPROMS. When specified, devices shall be erased in accordance with the procedures and characteristics

specified in 4.5.

3.11.2 Programmability of EPROMS. When specified, devices shall be programmed to the specified pattern using the

procedures and characteristics specified in 4.6 and table III.

3.11.3 Verification of erasure of programmability of EPROMS. When specified, devices shall be verified as either

programmed to the specified pattern or erased. As a minimum, verification shall consist of performing a functional test

(subgroup 7) to verify that all bits are in the proper state. Any bit that does not verify to be in the proper state shall constitute a

device failure, and shall be removed from the lot.

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G SHEET 6

DSCC FORM 2234

APR 97

TABLE I. Electrical performance characteristics.

Test

Symbol

Conditions 1/

4.5 V ≤ VCC ≤ 5.5 V

unless otherwise specified

Group A

subgroups

Device

type

Limits

Unit

Min Max

Input low voltage

(except EA) VIL 1, 2, 3 All 0

2/ 0.2 VCC

0.25 V

Input low voltage to EA VIL1 1, 2, 3 All 0

2/ 0.2VCC

0.45 V

Input high voltage

(except XTAL1,

RESET)

VIH 1, 2, 3 All 0.2VCC

+1.1 VCC

+0.5 2/ V

Input high voltage

(XTAL1, RESET) VIH1 1, 2, 3 All 0.7VCC

+0.2 VCC

+0.5 2/ V

Output low voltage

(Ports 1, 2, 3) VOL I

OL = 1.6 mA 1, 2, 3 All 0.45 V

Output low voltage

Port 0, ALE, PSEN VOL1 I

OL = 3.2 mA 1, 2, 3 All 0.45 V

IOH = -60 μA 1, 2, 3 All 2.4 V

Output high voltage

(Ports 1, 2, 3) VOH IOH = -10 μA 1, 2, 3 All 0.90VCC V

IOH = -800 μA 1, 2, 3 All 2.4 V

Output high voltage

port 0 in external

bus mode, ALE, PSEN

VOH1 IOH = -80 μA

VIN = VIH min

VIL max

VCC = 4.5 V

1, 2, 3 All 0.90VCC V

Logic 0 input current,

ports 1, 2, 3 IIL 1, 2, 3 All -75 μA

Logic 1 to 0 transition

current ports 1, 2, 3 ITL

VIN = 0.45 V

1, 2, 3 All -750 μA

VIN = VIH min 1, 2, 3 All 0 10 μA

Input leakage current

port 0 ILI VIN = VIL max 1, 2, 3 All 0 -10 μA

Reset pull down resistor RRST 1, 2, 3 All 50 300 kΩ

Pin capacitance CIO See 4.4.1c 4 All 25 pF

35

mA

6 mA

Supply current:

Running at 12 MHz

Idle at 12 MHz 4/

Power down

ICC1

3/ 1, 2, 3 01, 03,

05, 07

75

μA

40

mA

7 mA

Supply current:

Running at 16 MHz

Idle at 16 MHz 4/

Power down

ICC2

3/ 1, 2, 3 02, 04,

06, 08

75

μA

Functional tests See 4.4.1b 7, 8 All

See footnotes at end of table.

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DSCC FORM 2234

APR 97

TABLE I. Electrical performance characteristics – Continued.

Test

Symbol

Conditions 1/

4.5 V ≤ VCC ≤ 5.5 V

unless otherwise specified

Group A

subgroups

Device

type

Limits Unit

Min Max

EXTERNAL PROGRAM AND DATA MEMORY CHARACTERISTICS 9, 10, 11 01, 03,

05, 07 3.5 12.0

9, 10, 11 02, 04,

06, 08 3.5 16.0

Oscillator frequency 1/tCLCL

9, 10, 11 All 3.5 12.0

MHz

9, 10, 11 01, 03,

05, 07 112

9, 10, 11 02, 04,

06, 08 68

ALE pulse width tLHLL

9, 10, 11 All 2tCLCL

-55

ns

9, 10, 11 01, 03,

05, 07 13.0

9, 10, 11 02, 04,

06, 08 5.0

Address valid to ALE low tAVLL

9, 10, 11 All tCLCL

-70 7/

ns

9, 10, 11 01, 03,

05, 07 33.0

9, 10, 11 02, 04,

06, 08 12.0

Address hold after ALE low tLLAX

9, 10, 11 All tCLCL

-50

ns

9, 10, 11 01, 03,

05, 07 218

9, 10, 11 02, 04,

06, 08 132

ALE low to valid instr. in tLLIV

9, 10, 11 All 4tCLCL

115

ns

9, 10, 11 01, 03,

05, 07 28

9, 10, 11 02, 04,

06, 08 7.0

ALE low to PSEN low tLLPL

See figure 4

5/ 6/

9, 10, 11 All tCLCL

-55

ns

See footnotes at end of table.

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DSCC FORM 2234

APR 97

TABLE I. Electrical performance characteristics – Continued.

Test

Symbol

Conditions 1/

4.5 V ≤ VCC ≤ 5.5 V

unless otherwise specified

Group A

subgroups

Device

type

Limits Unit

Min Max

9, 10, 11 01, 03,

05, 07 190

9, 10, 11 02, 04,

06, 08 125

PSEN pulse width tPLPH

9, 10, 11 All 3tCLCL

-60

ns

9, 10, 11 01, 03,

05, 07 130

9, 10, 11 02, 04,

06, 08 65

PSEN low to valid instr. in tPLIV

9, 10, 11 All 3tCLCL

-120

ns

Input instr. hold after

PSEN tPXIX 9, 10, 11 All 0 ns

9, 10, 11 01, 03,

05, 07 58

9, 10, 11 02, 04,

06, 08 37

Input instr. float after

PSEN tPXIZ

9, 10, 11 All tCLCL

-25

ns

9, 01, 11 01, 03,

05, 07 312

9, 10, 11 02, 04,

06, 08 188

Address to valid instr. in tAVIV

9, 10, 11 All 5tCLCL

-120

ns

PSEN low to address float tPLAZ 9, 10, 11 All 25 ns

9, 10, 11 01, 03,

05, 07 400

9, 10, 11 02, 04,

06, 08 270

RD pulse width tRLRH

9, 10, 11 All 6tCLCL

-100

ns

9, 10, 11 01, 03,

05, 07 400

9, 10, 11 02, 04,

06, 08 270

WR pulse width tWLWH

See figure 4

5/ 6/

9, 10, 11 All 6tCLCL

-100

ns

See footnotes at end of table.

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APR 97

TABLE I. Electrical performance characteristics – Continued.

Test

Symbol

Conditions 1/

4.5 V ≤ VCC ≤ 5.5 V

unless otherwise specified

Group A

subgroups

Device

type

Limits Unit

Min Max

9, 10, 11 01, 03,

05, 07 232

9, 10, 11 02, 04,

06, 08 123

RD low to valid data in tRLDV

9, 10, 11 All 5tCLCL

-185

ns

Data hold after RD tRHDX 9, 10, 11 All 0 ns

9, 10, 11 01, 03,

05, 07 82

9, 10, 11 02, 04,

06, 08 38

Data float after RD tRHDZ

9, 10, 11 All 2tCLCL

-85

ns

9, 10, 11 01, 03,

05, 07 496

9, 10, 11 02, 04,

06, 08 320

ALE low to valid data in tLLDV

9, 10, 11 All 8tCLCL

-170

ns

9, 10, 11 01, 03,

05, 07 565

9, 10, 11 02, 04,

06, 08 370

Address to valid data in tAVDV

9, 10, 11 All 9tCLCL

-185

ns

9, 10, 11 01, 03,

05, 07 185 315

9, 10, 11 02, 04,

06, 08 120 250

ALE low to RD or WR low tLLWL

9, 10, 11 All 3tCLCL

-65 3tCLCL

+65

ns

9, 10, 11 01, 03,

05, 07 188

9, 10, 11 02, 04,

06, 08 102

Address to RD or WR low tAVWL

See figure 4

5/ 6/

9, 10, 11 All 4tCLCL

-145

ns

See footnotes at end of table.

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TABLE I. Electrical performance characteristics – Continued.

Test

Symbol

Conditions 1/

4.5 V ≤ VCC ≤ 5.5 V

unless otherwise specified

Group A

subgroups

Device

type

Limits Unit

Min Max

9, 10, 11 01, 03,

05, 07 8.0

9, 10, 11 02, 04,

06, 08 5.0

Data valid to WR transition tQVWX

9, 10, 11 All tCLCL

-75 7/

ns

9, 10, 11 01, 03,

05, 07 18

9, 10, 11 02, 04,

06, 08 5.0

Data hold after WR tWHQX

9, 10, 11 All tCLCL

-65 7/

ns

RD low to address float tRLAZ 9, 10, 11 All 0 ns

9, 10, 11 01, 03,

05, 07 18 148

9, 10, 11 02, 04,

06, 08 5.0 127

RD or WR high to ALE high tWHLH

See figure 4

5/ 6/

9, 10, 11 All tCLCL

-65 7/ tCLCL

+65

ns

9, 10, 11 01, 03,

05, 07 1000

8/

9, 10, 11 02, 04,

06, 08 740

8/

Serial port clock cycle time tXLXL

9, 10, 11 All 12tCLCL

8/

ns

9, 10, 11 01, 03,

05, 07 700

9, 10, 11 02, 04,

06, 08 484

Output data setup to clock

rising edge tQVXH

9, 10, 11 All 10tCLCL

-133

ns

9, 10, 11 01, 03,

05, 07 50

9, 10, 11 02, 04,

06, 08 6.0

Output data hold after clock

rising edge tXHQX

9, 10, 11 All 2tCLCL

-117

ns

Input data hold after clock

rising edge tXHDX

See figure 4

4/ 5/ 6/

9, 10, 11 All 0 ns

See footnotes at end of table.

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APR 97

TABLE I. Electrical performance characteristics – Continued.

Test

Symbol

Conditions 1/

4.5 V ≤ VCC ≤ 5.5 V

unless otherwise specified

Group A

subgroups

Device

type

Limits Unit

Min Max

9, 10, 11 01, 03,

05, 07 700

9, 10, 11 02, 04,

06, 08 484

Clock rising edge to input

data valid

9, 10, 11 All 10tCLCL

-133

ns

High time tCHCX 9, 10, 11 All 20 ns

Low time tCLCX 9, 10, 11 All 20 ns

Rise time tCLCH 9, 10, 11 All 20 ns

Fall time tCHCL

See figure 4

2/ 4/ 5/

9, 10, 11 All 20 ns

1/ All testing to be performed using worst-case test conditions unless otherwise specified. The case operating temperature of

each device shall be as specified in paragraph 1.4.

2/ Guaranteed, if not tested, to the limits specified.

3/ ICC is measured with all output pins disconnected: XTAL1 driven with tCLCH, tCHCL = 5 ns, VIL = VSS + 0.5 V, VIH = VCC - 0.5 V

measured with EA and RESET connected to VCC. "Idle” current is measured with EA and RESET connected to VSS.

"Power down" current is measured with EA connected to VSS and RESET connected to VSS.

4/ Due to test equipment limitations, actual tested values may differ from those specified, but specified limits are guaranteed.

5/ All devices to be tested at 16 MHz only, but guaranteed across the specified operating frequency. Devices not meeting the

limits of the 16 MHz devices may be retested to be supplied at the slower 12 MHz speed grade.

6/ Parametric values are based on a 12 MHz oscillator for device types 01 and 07, a 16 MHz oscillator for devices type 02 and

08, and a variable oscillator for all other devices.

7/ When using timing equations, the minimum value shall not be less than 5 ns.

8/ Parametric values are typical values rather than minimum values.

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Case X

Millimeters Inches

Symbol Min Max Min Max

A 4.19 5.08 0.165 0.200

A1 0.51 1.14 0.020 0.045

A2 3.68 3.94 0.145 0.155

b 0.43 0.56 0.017 0.022

b1 1.14 1.63 0.045 0.064

c 0.25 0.38 0.010 0.015

D 51.94 52.45 2.045 2.065

e 2.54 BSC 0.100 BSC

E 15.24 15.75 0.600 0.620

E1 13.84 14.10 0.545 0.555

eA 15.24 bsc 0.600 bsc

eB 15.24 17.65 0.600 0.695

L 3.05 3.51 0.120 0.138

FIGURE 1. Case outlines.

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Case Y

FIGURE 1. Case outlines – Continued.

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Case Y

Millimeters Inches

Symbol Min Max Min Max

A 4.19 4.57 0.165 0.180

A1 2.29 3.05 0.090 0.120

b 0.33 0.53 0.013 0.021

b2 0.66 0.81 0.026 0.032

D 17.40 17.65 0.685 0.695

D1 16.51 16.66 0.650 0.656

D2 12.70 0.500

D3/E3 14.99 16.00 0.590 0.630

E 17.40 17.65 0.685 0.695

E1 16.51 16.66 0.650 0.656

E2 12.70 0.500

e 1.27 0.050

L1 0.64 0.025

L2 1.52 0.060

R1 0.25 0.010

R2 0.64 1.14 0.025 0.045

FIGURE 1. Case outlines – Continued.

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Cases Q and X

Terminal number Terminal symbol Terminal number Terminal symbol

1 P1.0 21 P2.0(A8)

2 P1.1 22 P2.1(A9)

3 P1.2 23 P2.2(A10)

4 P1.3 24 P2.3(A11)

5 P1.4 25 P2.4(A12)

6 P1.5 26 P2.5(A13)

7 P1.6 27 P2.6(A14)

8 P1.7 28 P2.7(A15)

9 RESET 29 PSEN

10 (RXD)P3.0 30 ALS/PROG

11 (TXD)P3.1 31 EA/VPP

12 (INT0)P3.2 32 P0.7(AD7)

13 (INT1)P3.3 33 P0.6(AD6)

14 (TO)P3.4 34 P0.5(AD5)

15 (TI)P3.5 35 P0.4(AD4)

16 (WR)P3.6 36 P0.3(AD3)

17 (RD)P3.7 37 P0.2(AD2)

18 XTAL2 38 P0.1(AD1)

19 XTAL1 39 P0.0(AD0)

20 VSS 40 VCC

FIGURE 2. Terminal connections.

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Cases U, M, and Y

Terminal number Terminal symbol Terminal number Terminal symbol

1 NC 23 NC

2 P1.0 24 P2.0(A8)

3 P1.1 25 P2.1(A10)

4 P1.2 26 P2.2(A10)

5 P1.3 27 P2.3(A11)

6 P1.4 28 P2.4(A12)

7 P1.5 29 P2.5(A13)

8 P1.6 30 P2.6(A14)

9 P1.7 31 P2.7(A15)

10 RESET 32 PSEN

11 (RXD)P3.0 33 AL/PRO

12 NC 34 NC

13 (TXD)P3.1 35 EA/VPP

14 (INTO)P3.2 36 P0.7(AD7)

15 (INT1)P3.3 37 P0.6(AD6)

16 (TO)P3.4 38 P0.5(AD5)

17 (T1)P3.5 39 P0.4(AD4)

18 (WR)P3.6 40 P0.3(AD3)

19 (RD)P3.7 41 P0.2(AD2)

20 XTAL2 42 P0.1(AD1)

21 XTAL1 43 P0.0(AD0)

22 VSS 44 VCC

FIGURE 2. Terminal connections. – Continued.

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FIGURE 3. Block diagram.

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FIGURE 4. Test circuit and switching waveforms.

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FIGURE 4. Test circuit and switching waveforms – Continued.

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AC inputs during testing are driven at VCC - 0.5 V for a logic '1' and 0.45 V for a logic '0'. Timing measurements are made at VIH

minimum for a logic '1' and VIL maximum for a logic '0'.

For timing purposes, a port pin ceases floating when a 100 mV change from load voltage occurs and begins floating when a 100

mV change from loaded VOH or VOL level occurs. IOL or IOH ≥ ±20 mA.

FIGURE 4. Test circuit and switching waveforms – Continued.

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Output RL CL

Port 0, ALE, PSEN 1.2 kΩ 100pF

All other outputs 2.4 kΩ 80 pF

Notes:

1. All diodes are 1n914 or equivalent.

2. CL includes tester and fixture capacitance.

FIGURE 4. Test circuit and switching waveforms – Continued.

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4. VERIFICATION

4.1 Sampling and inspection. For device classes N, Q, and V, sampling and inspection procedures shall be in accordance

with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM

plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall

be in accordance with MIL-PRF-38535, appendix A.

4.2 Screening. For device classes N, Q, and V, screening shall be in accordance with MIL-PRF-38535, and shall be

conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in

accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.

4.2.1 Additional criteria for device class M.

a. Burn-in test, method 1015 of MIL-STD-883.

(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision

level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall

specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

method 1015.

(2) TA = +125°C, minimum.

b. Interim and final electrical test parameters shall be as specified in table II herein.

c. A data retention stress test shall be included as part of the screening procedure and shall consist of the following steps:

Margin test method A.

(1) Program greater than 95 percent of the bit locations, including the slowest programming cell (see 3.11.2). The

remaining cells shall provide a worst case speed pattern.

(2) Bake, unbiased, for 72 hours at 140°C to screen for data retention lifetime.

(3) Perform a margin test using Vm = 5.9 V at 25°C using loose timing (i.e., TACC > 1 μs).

(4) Perform dynamic burn-in (see 4.2.1a).

(5) Margin at Vm = 5.9 V.

(6) Perform electrical tests (see 4.2).

(7) Erase (see 3.11.1), except devices submitted for groups A, B, C, and D testing.

(8) Verify erasure (see 3.11.3).

Margin test method B.

(1) Program at +25°C 100 percent of the bits.

(2) Bake, unbiased, for 24 hours at +250°C.

(3) Perform margin test at Vm = 5.9 V.

(4) Erase (see 3.11.1).

(5) Perform interim electrical tests in accordance with table IIA.

(6) For device types 01, 02 Program 100% of the bits and verify (see 3.11.2).

(7) Perform burn-in (see 4.2.1a).

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(8) One-hundred percent test at 25°C (group A, subgroups 1 and 7). Vm = 5.9 V with loose timing, apply PDA. For device

types 03 - 08, the virgin state of the device must be verified.

(9) Perform remaining final electrical subgroups and group A testing.

(10) For device types 01, 02, erase devices may be submitted for groups B, C, and D at this time.

(11) For device types 01, 02, verify erasure (see 3.11.3). Steps 1 through 4 are performed at wafer level.

4.2.2 Additional criteria for device classes N, Q, and V.

a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the

device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under

document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with

MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall

specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

method 1015 of MIL-STD-883.

b. Interim and final electrical test parameters shall be as specified in table II herein.

c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in

MIL-PRF-38535, appendix B.

4.3 Qualification inspection for device classes N, Q, and V. Qualification inspection for device classes N, Q, and V shall be in

accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups

A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).

4.4 Conformance inspection. Technology conformance inspection for classes N, Q, and V shall be in accordance with

MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for

device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed

for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections

(see 4.4.1 through 4.4.4).

4.4.1 Group A inspection.

a. Tests shall be as specified in table II herein.

b. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes N, Q, and V,

subgroups 7 and 8 shall include verifying the functionality of the device.

c. Subgroup 4 (CIO measurement) shall be measured only for the initial test and after process or design changes which

may affect capacitance. A minimum sample size of 5 devices with zero rejects shall be required.

d. All devices selected for testing shall have the EPROM programmed with a checkerboard pattern or equivalent. After

completion of all testing, the devices shall be erased and verified (except devices submitted for groups C and D

testing).

e. The device types 03 - 08 shall be tested for programmability and AC performance compliance to the requirements of

group A, subgroups 9, 10, 11. Either of the two techniques is acceptable.

(1) Testing the entire lot using additional built in test circuitry which allows the manufacturer to verify programmability

and AC performance without programming user array. If this is done, the resulting test patterns shall be verified

on all devices during subgroups 9, 10, 11, group A testing per the sampling plan specified in MIL-STD-883,

method 5005.

(2) If such compliance cannot be tested on an unprogrammed device, a sample shall be selected to satisfy

programmability requirements prior to performing subgroups 9, 10, 11. Twelve devices shall be submitted to

programming. If more than 2 devices fail to program, the lot shall be rejected. At the manufacturer's option, the

sample may be increased to 24 total devices with no more than 4 total device failures allowable. (Ten devices

from the programmability sample shall be submitted to the requirements of group A, subgroups 9, 10, 11. If

more than 2 total devices fail, the lot shall be rejected. At the manufacturer's option, the sample may be

increased to 20 total devices with no more than 4 total device failures allowable.)

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TABLE II. Electrical test requirements.

Test requirements Subgroups

(in accordance with

MIL-STD-883, method

5005, table I)

Subgroups

(in accordance with

MIL-PRF-38535, table III)

Device

class M Device

class N Device

class Q Device

class V

Interim electrical

parameters (see 4.2) 1, 7

Final electrical

parameters (see 4.2) 1/ 1, 2, 3, 7, 8, 9, 10,

11 2/ 1, 2, 3, 7, 8,

9, 10, 11 1/ 1, 2, 3, 7,

8, 9, 10, 11 1/ 1, 2, 3, 7,

8, 9, 10, 11

Group A test

requirements (see 4.4) 1, 2, 3, 4, 7, 8, 9, 10,

11 1, 2, 3, 4, 7, 8,

9, 10, 11 1, 2, 3, 4, 7,

8, 9, 10, 11 1, 2, 3, 4, 7,

8, 9, 10, 11

Group C end-point electrical

parameters (see 4.4) 2, 8a, 10 2, 8a, 10 2, 8a, 10 2, 8a, 10

Group D end-point electrical

parameters (see 4.4) 2, 8a, 10 2, 8a, 10 2, 8a, 10 2, 8a, 10

Group E end-point electrical

parameters (see 4.4) 2, 8a, 10 2, 8a, 10 2, 8a, 10 2, 8a, 10

1/ PDA applies to subgroup 1 and 7.

2/ PDA applies to subgroups 2 and 8.

4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.

4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:

a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level

control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the

inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of

MIL-STD-883.

b. TA = +125°C, minimum.

c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.

4.4.2.2 Additional criteria for device classes N, Q, and V. The steady-state life test duration, test condition and test

temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with

MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB

in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test

circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

method 1005 of MIL-STD-883.

a. For device types 01 and 02, all devices selected for testing shall be programmed with a checkerboard pattern or

equivalent. After completion of all testing, the devices shall be erased and verified.

b. For device types 03 - 08, the programmability shall be verified per 4.4.1e

4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.

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4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured

(see 3.5 herein).

a. End-point electrical parameters shall be as specified in table II herein.

b. For device classes N, Q, and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as

specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to

radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device

classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C,

after exposure, to the subgroups specified in table II herein.

4.5 Erasing procedure. The recommended erasure procedure is exposure to ultraviolet light (at 2537 Angstroms) to an

integrated dose of at least 15 W-s/cm2. Exposing the EPROM to an ultraviolet lamp of 12,000 μW/cm2 rating for 20 to 30

minutes, at a distance of about 1 inch, should be sufficient.

4.6 Programming procedures. The programming characteristics in table III and the following procedures shall be used for

programming the device.

a. Connect the device in the electrical configuration (see figure 5) for programming. The waveforms of figure 6 and

programming characteristics of table III shall apply.

b. Initially and after each erasure, all bits are in the high "H" state. Information is introduced by selectively programming

"L" into the desired bit locations. A programmed "L" can be changed to an "H" by ultraviolet light erasure (see 4.5).

TABLE III. Programming characteristics.

Parameter

Symbol

Conditions

Limits Unit

Min Max

Programming supply voltage VPP 12.5 13.0 V

Programming supply current IPP 50 mA

Oscillator frequency 1/tCLCL 4 6 MHz

Address setup to PROG low 2/ tAVGL 48tCLCL

Address hold after PROG 2/ tGHAX 48tCLCL

Data setup to PROG low 2/ tDVGL 48tCLCL

Data hold after PROG 2/ tGHDX 48tCLCL

P2.7 (ENABLE) high to VP 2/ tEHSH 48tCLCL

ns

VPP setup to PROG low 2/ tSHGL 10

VPP hold after PROG 2/ tGSHL 10

PROG width 2/ tGLGH 90 110

μs

Address to data 2/ tAVQV 48tCLCL

ENABLE low to data valid 2/ tELQV 48tCLCL

Data float after ENABLE 2/ tEHQZ 48tCLCL

ns

PROG high to PROG low 2/ tGHGL

See figures 5, 6

1/

10 μs

1/ For programming specifications, TC = 21°C to 27°C, VCC = 5.0 V ±10 percent, VSS = 0 V.

2/ Due to test equipment limitations, actual tested values may differ from those specified, but specified limits are

guaranteed.

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FIGURE 5. Programming waveforms.

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FIGURE 6. Programming verification.

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5. PACKAGING

5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes

N, Q, and V or MIL-PRF-38535, appendix A for device class M.

6. NOT ES

6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications

(original equipment), design applications, and logistics purposes.

6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor

prepared specification or drawing.

6.1.2 Substitutability. Device class Q devices will replace device class M devices.

6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for

the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.

6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system

application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users

and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic

devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.

6.4 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43218-3990, or telephone

(614) 692-0547.

6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in

MIL-PRF-38535 and MIL-HDBK-1331 and as follows:

Port 0. Port 0 is an 8-bit open drain bidirectional I/O port. Port 0 pins that have 1's written to them float, and in that state

can be used as high-impedance inputs.

Port 0 is also the multiplexed low-order address and data bus during accesses to external program and data memory. In this

application it uses strong internal pullups when emitting 1's. Port 0 also receives the code bytes during EPROM programming,

and outputs the code bytes during program verification. External pullups are required during program verification.

Port 1. Port 1 is an 8-bit bidirectional I/O port with internal pullups. Port 1 pins that have 1's written to them are pulled high

by the internal pullups, and in that state can be used as inputs. As inputs, port 1 pins that are externally being pulled low will

source current (IIL) because of the internal pullups.

Port 1 also receives the low-order address bytes during EPROM programming and program verification.

Port 2. Port 2 is an 8-bit bidirectional I/O port with internal pullups. Port 2 pins that have 1's written to them are pulled high

by the internal pullups, and in that state can be used as inputs. As inputs, port 2 pins that are externally being pulled low will

source current (IIL) because of the internal pullups.

Port 2 emits the high-order address byte during fetches from external program memory and during accesses to external data

memory that use 16-bit addresses (MOVX at DPTR). In this application it uses strong internal pullups when emitting 1's. During

accesses to external data memory that used 8-bit addresses (MOVX at Ri), Port 2 emits the contents of the P2 special function

register. Port 2 also receives some control signals and the high order address bits during EPROM programming and program

verification.

Port 3. Port 3 is an 8-bit bidirectional I/O port with internal pullups. Port 3 pins that have 1's written to them are pulled high

by the internal pullups, and in that state can be used as inputs. As inputs, port 3 pins that are externally being pulled low will

source current (IIL) because of the pull-ups.

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Port 3 also serves the functions of various special features of the MCS-51 family, as listed below:

Port pin Alternate function

P3.0

P3.1

P3.2

P3.3

P3.4

P3.5

P3.6

P3.7

RXD (serial input port)

TXD (serial output port)

INT0 (external interrupt 0)

INT1 (external interrupt 1)

T0 (Timer 0 external input)

T1 (Timer 1 external input)

WR (external data memory write strobe)

RD (external data memory read strobe)

Port 3 also receives some control signals for EPROM programming and program verification.

RST. Reset input. A logic high on this pin for two machine cycles while the oscillator is running resets the device. An

internal pulldown resistor permits a power-on reset to be generated using only an external capacitor to VCC.

ALE/PROG. Address latch enable output pulse for latching the low byte of the address during accesses to external

memory. This pin is also the program pulse input (PROG) during EPROM programming.

In normal operation ALE is emitted at a constant rate of 1/6 the oscillator frequency, and may be used for external timing or

clocking purposes. Note, however, that one ALE pulse is skipped during each access to external data memory.

PSEN. Program store enable is the read strobe to external program memory. When the device is executing from internal

program memory, PSEN is inactive (high). When the device is executing code from external program memory, PSEN is

activated twice each machine cycle, except that two PSEN activations are skipped during each access to external data memory.

EA/VPP. External access enable. EA must be externally held low in order to enable the device to fetch code from external

program memory locations 0000H to 0FFFH. If either of the lock bits is programmed, the logic level at EA is internally latched

during reset. EA must be strapped to VCC for internal program execution. This pin also receives the 12.75 V programming

supply voltage (VPP) during EPROM programming.

XTAL1. Output from the inverting oscillator amplifier and input to the internal block generator circuits.

XTAL2. Output from the inverting oscillator amplifier.

6.6 Sources of supply.

6.6.1 Sources of supply for device classes N, Q, and V. Sources of supply for device classes N, Q, and V are listed in

QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and

have agreed to this drawing.

6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.

The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been

submitted to and accepted by DSCC-VA.

6.7 Supersession Data. The PIN supersession data shall be as follows:

NEW PIN

OLD PIN

5962-8768401MQX 5962-8768401QX

5962-8768401MUX 5962-8768401UX

5962-8768402MQX 5962-8768402QX

5962-8768402MUX 5962-8768402UX

STANDARD MICROCIRCUIT DRAWING BULLETIN

DATE: 07-09-04

Approved sources of supply for SMD 5962-87684 are listed below for immediate acquisition information only and shall

be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised

to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate

of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded by the next

dated revision of MIL-HDBK-103 and QML-38535.

Standard

microcircuit drawing

PIN 1/

Vendor

CAGE

number

Vendor

similar

PIN 2/

5962-8768401QA 3V146 MD87C51/BQA

5962-8768401UA 3V146 MR87C51/BQA

5962-8768401MQA 3V146 87C51/BQA

5962-8768401MUA 3V146 87C51/BUA

5962-8768401MMA 3V146 87C51/BMA

5962-8768402QA 3V146 MD87C51-16/BQA

5962-8768402UA 3V146 MR87C51-16/BUA

5962-8768402MQA 3V146 87C51-16/BQA

5962-8768402MUA 3V146 87C51-16/BUA

5962-8768402MMA 3V146 87C51-16/BMA

5962-8768403NXA 3/ 87C51/IN40A

5962-8768403NYA 3/ 87C51/IN44A

5962-8768404NXA 3/ 87C51-16/IN40A

5962-8768404NYA 3/ 87C51-16/IN44A

5962-8768405NXA 3/ 87C51/CN40A

5962-8768405NYA 3/ 87C51/CN44A

5962-8768406NXA 3/ 87C51-16/CN40A

5962-8768406NYA 3/ 87C51-16/CN44A

5962-8768407MQA 0C7V7 87C51/BQA OTP

5962-8768407MUA 0C7V7 87C51/BUA OTP

5962-8768407MMA 0C7V7 87C51/BMA OTP

5962-8768408MQA 0C7V7 87C51-16/BQA OTP

5962-8768408MUA 0C7V7 87C51-16/BUA OTP

5962-8768408MMA 0C7V7 87C51-16/BMA OTP

1/ The lead finish shown for each PIN representing a hermetic

package is the most readily available from the manufacturer

listed for that part. If the desired lead finish is not listed contact

the vendor to determine its availability.

2/ Caution. Do not use this number for item acquisition. Items

acquired to this number may not satisfy the performance

requirements of this drawing.

3/ Not available from an approved source of supply.

Sheet 1 of 2

STANDARD MICROCIRCUIT DRAWING BULLETIN - Continued.

DATE: 07-09-04

Vendor CAGE Vendor name

number and address

0C7V7 QP Semiconductor

2945 Oakmead Village Court

Santa Clara, CA 95051

3V146 Rochester Electronics, Inc.

16 Malcolm Hoyt Drive

Newburyport, MA 01950

The information contained herein is disseminated for convenience only and the

Government assumes no liability whatsoever for any inaccuracies in the

information bulletin.

Sheet 2 of 2