PD - 96181 SMPS MOSFET HEXFET(R) Power MOSFET Applications l IRF6218SPbF IRF6218LPbF VDSS Reset Switch for Active Clamp Reset DC-DC converters RDS(on) max -150V 150m:@VGS = -10V ID -27A Benefits l l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Lead-Free D G S D2Pak IRF6218SPbF TO-262 IRF6218LPbF Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter -150 V VGS Gate-to-Source Voltage 20 ID @ TC = 25C Continuous Drain Current, VGS @ 10V -27 ID @ TC = 100C Continuous Drain Current, VGS @ 10V -19 IDM -110 Pulsed Drain Current c PD @TC = 25C Maximum Power Dissipation Linear Derating Factor h dv/dt TJ Peak Diode Recovery dv/dt Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds A 250 W 1.6 W/C 8.2 -55 to + 175 V/ns C 300 (1.6mm from case ) Thermal Resistance Parameter g RJC Junction-to-Case RJA Junction-to-Ambient (PCB Mounted, steady state) gh Typ. Max. Units --- 0.61 C/W --- 40 Notes through are on page 9 www.irf.com 1 09/22/08 IRF6218S/LPbF Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ RDS(on) --- Breakdown Voltage Temp. Coefficient --- -0.17 --- V/C Reference to 25C, ID = -1mA Static Drain-to-Source On-Resistance --- 120 150 m VGS = -10V, ID = -16A VGS(th) Gate Threshold Voltage -3.0 --- -5.0 V IDSS Drain-to-Source Leakage Current --- --- -25 A --- --- -250 Gate-to-Source Forward Leakage --- --- -100 Gate-to-Source Reverse Leakage --- --- 100 IGSS --- V Conditions -150 VGS = 0V, ID = -250A f VDS = VGS, ID = -250A VDS = -120V, VGS = 0V VDS = -120V, VGS = 0V, TJ = 150C nA VGS = -20V VGS = 20V Dynamic @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units S Conditions gfs Qg Forward Transconductance 11 --- --- VDS = -50V, ID = -16A Total Gate Charge --- 71 110 Qgs Gate-to-Source Charge --- 21 --- Qgd Gate-to-Drain ("Miller") Charge --- 32 --- VGS = -10V td(on) Turn-On Delay Time --- 21 --- VDD = -75V tr Rise Time --- 70 --- td(off) Turn-Off Delay Time --- 35 --- RG = 3.9 tf Fall Time --- 30 --- VGS = -10V Ciss Input Capacitance --- 2210 --- VGS = 0V Coss Output Capacitance --- 370 --- VDS = -25V Crss Reverse Transfer Capacitance --- 89 --- Coss Output Capacitance --- 2220 --- VGS = 0V, VDS = -1.0V, = 1.0MHz Coss Output Capacitance --- 170 --- VGS = 0V, VDS = -120V, = 1.0MHz Coss eff. Effective Output Capacitance --- 340 --- VGS = 0V, VDS = 0V to -120V ID = -16A nC ns pF VDS = -120V f ID = -16A f = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units --- 210 mJ --- -16 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current --- --- -27 ISM (Body Diode) Pulsed Source Current --- --- -110 showing the integral reverse VSD (Body Diode) Diode Forward Voltage --- --- -1.6 V p-n junction diode. TJ = 25C, IS = -16A, VGS = 0V trr Reverse Recovery Time --- 150 --- ns Qrr Reverse Recovery Charge --- 860 --- nC 2 c MOSFET symbol A D G S f TJ = 25C, IF = -16A, VDD = -25V di/dt = -100A/s f www.irf.com IRF6218S/LPbF 1000 1000 100 BOTTOM 10 TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 100 1 -4.5V 0.1 BOTTOM VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 10 -4.5V 1 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 0.01 0.1 1 0.1 10 100 0.1 -V DS, Drain-to-Source Voltage (V) 10 100 -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 T J = 25C T J = 175C 10 VDS = 50V 60s PULSE WIDTH 1.0 2 4 6 8 10 -V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 12 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current () 1 ID = -27A VGS = -10V 2.0 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF6218S/LPbF 100000 -V GS, Gate-to-Source Voltage (V) ID= -16A C oss = C ds + C gd 10000 C, Capacitance(pF) 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Ciss 1000 Coss Crss 100 VDS= 30V 8.0 6.0 4.0 2.0 10 0.0 1 10 100 0 -V DS, Drain-to-Source Voltage (V) 40 50 60 70 80 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 25C VGS = 0V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 30 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) T J = 175C 10.00 0.10 20 1000 1000.00 1.00 10 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100.00 VDS= 120V VDS= 75V 10.0 100sec 10 Tc = 25C Tj = 175C Single Pulse 1msec 10msec 1 1 10 100 1000 -VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF6218S/LPbF 30 RD V DS -I D, Drain Current (A) 25 VGS D.U.T. RG 20 - + VDD VGS 15 Pulse Width 1 s Duty Factor 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 175 T C , Case Temperature (C) 10% VGS Fig 9. Maximum Drain Current vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 1 R2 R2 2 R3 R3 3 2 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) C 3 Ri (C/W) i (sec) 0.264 0.000285 0.206 0.001867 0.140 0.013518 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF6218S/LPbF RDS(on) , Drain-to -Source On Resistance (m) RDS (on) , Drain-to-Source On Resistance (m ) 400 350 300 VGS = -10V 250 200 150 100 0 20 40 60 1000 900 800 700 600 ID = -27A 500 400 300 200 100 0 80 4 -I D , Drain Current (A) 5 6 7 8 9 10 11 12 -V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Drain Current Fig 13. On-Resistance vs. Gate Voltage Current Regulator Same Type as D.U.T. QG -VGS 50K .2F 12V QGS .3F QGD 900 D.U.T. +VDS VG VGS Charge -3mA IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform L VDS I AS D.U.T RG IAS -20V tp VDD A DRIVER 0.01 EAS , Single Pulse Avalanche Energy (mJ) - ID -4.6A -6.3A BOTTOM -16A 800 TOP 700 600 500 400 300 200 100 0 25 tp V(BR)DSS 15V Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 15c. Maximum Avalanche Energy vs. Drain Current www.irf.com IRF6218S/LPbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(/ ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 25 ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 )6 '$7(&2'( <($5 :((. /,1(/ 3$57180%(5 )6 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7 237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRF6218S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information (;$03/( 7+,6,6$1,5// /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(& ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( <($5 :((. /,1(& 25 ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7 237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRF6218S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.6mH, RG = 25, IAS = -17A. ISD -17A, di/dt -520A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. Rq is measured at T J of approximately 90C. When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2008 www.irf.com 9