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09/22/08
IRF6218SPbF
IRF6218LPbF
SMPS MOSFET
HEXFET® Power MOSFET
Notes through are on page 9
lReset Switch for Active Clamp
Reset DC-DC converters
Benefits
Applications
lLow Gate to Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
lLead-Free
S
D
G
VDSS RDS(on) max ID
-150V 150m
:
@VGS = -10V -27A
D2Pak
IRF6218SPbF
TO-262
IRF6218LPbF
Absolute Maximum Ratin
g
s
Parameter Units
VDS Drain-to-Source Voltage V
VGS Gate-to-Source Voltage
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
c
PD @TC = 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
dv/dt Peak Diode Recovery dv/dt
h
V/ns
TJ Operating Junction and °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case
g
––– 0.61 °C/W
RθJA Junction-to-Ambient (PCB Mounted, steady state)
gh
––– 40
1.6
250
Max.
-27
-19
-110
-150
± 20
300 (1.6mm from case )
8.2
-55 to + 175
PD - 96181
IRF6218S/LPbF
2www.irf.com
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– V
∆V(BR)DSS
/
∆TJ Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 120 150 mΩ
VGS(th) Gate Threshold Voltage -3.0 ––– -5.0 V
IDSS Drain-to-Source Leakage Current ––– ––– -25 µA
––– ––– -250
IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA
Gate-to-Source Reverse Leakage ––– ––– 100
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
gfs Forward Transconductance 11 ––– ––– S
QgTotal Gate Charge ––– 71 110
Qgs Gate-to-Source Charge ––– 21 ––– nC
Qgd Gate-to-Drain ("Miller") Charge ––– 32 –––
td(on) Turn-On Delay Time ––– 21 –––
trRise Time –––70–––ns
td(off) Turn-Off Delay Time ––– 35 –––
tfFall Time –––30–––
Ciss Input Capacitance ––– 2210 –––
Coss Output Capacitance ––– 370 –––
Crss Reverse Transfer Capacitance ––– 89 ––– pF
Coss Output Capacitance ––– 2220 –––
Coss Output Capacitance ––– 170 –––
Coss eff. Effective Output Capacitance ––– 340 –––
Avalanche Characteristics
Parameter Units
EAS Sin
g
le Pulse Avalanche Ener
gy
d
mJ
IAR Avalanche Current
c
A
Diode Characteristics
Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– -27
(Body Diode) A
ISM Pulsed Source Current ––– ––– -110
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– -1.6 V
trr Reverse Recovery Time ––– 150 ––– ns
Qrr Reverse Recovery Charge ––– 860 ––– nC
Typ.
–––
–––
Conditions
VDS = -50V, ID = -16A
ID = -16A
VDS = -120V
Conditions
VGS = -10V
f
VGS = 0V
VDS = -25V
ƒ = 1.0MHz
210
-16
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = -16A, VGS = 0V
f
TJ = 25°C, IF = -16A, VDD = -25V
di/dt = -100A/µs
f
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -16A
f
VDS = VGS, ID = -250µA
VDS = -120V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
VGS = -20V
VGS = 20V
Max.
VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = -120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to -120V
VGS = -10V
f
VDD = -75V
ID = -16A
RG = 3.9Ω
IRF6218S/LPbF
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
vs. Temperature
2 4 6 8 10 12
-VGS, Gate-to-Source Voltage (V)
1.0
10
100
-ID, Drain-to-Source Current (Α)
TJ = 25°C TJ = 175°C
VDS = 50V
≤60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -27A
VGS = -10V
0.1 110 100
-V DS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
≤60µs PULSE WIDTH
Tj = 25°C
-4.5V
0.1 110 100
-V DS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
-4.5V
≤60µs PULSE WIDTH
Tj = 175°C
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
IRF6218S/LPbF
4www.irf.com
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
110 100
-VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
-ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
-VDS, Drain-to-Source Voltage (V)
1
10
100
1000
-ID, Drain-to-Source Current (A)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
0 1020304050607080
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-VGS, Gate-to-Source Voltage (V)
VDS= 120V
VDS= 75V
VDS= 30V
ID= -16A
IRF6218S/LPbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 9. Maximum Drain Current vs.
Ambient Temperature
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
5
10
15
20
25
30
-ID, Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.264 0.000285
0.206 0.001867
0.140 0.013518
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
IRF6218S/LPbF
6www.irf.com
Fig 13. On-Resistance vs. Gate Voltage
Fig 12. On-Resistance vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-VGS
Q
G
Q
GS
Q
GD
V
G
Charge
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
tp
V
(
BR
)
DSS
I
AS
0 20406080
-ID , Drain Current (A)
100
150
200
250
300
350
400
RDS (on) , Drain-to-Source On Resistance (mΩ)
VGS = -10V
4 5 6 7 8 9 10 11 12
-VGS, Gate -to -Source Voltage (V)
0
100
200
300
400
500
600
700
800
900
1000
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = -27A
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
900
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP -4.6A
-6.3A
BOTTOM -16A
IRF6218S/LPbF
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D2Pak (TO-263AB) Part Marking Information
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
'$7(&2'(
<($5 
:((.
$ $66(0%/<6,7(&2'(
5(&7,),(5
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3 '(6,*1$7(6/($')5((
352'8&7237,21$/
)6
,17+($66(0%/</,1(/
$66(0%/('21::
7+,6,6$1,5)6:,7+
/27&2'( ,17(51$7,21$/
/2*2
5(&7,),(5
/27&2'(
$66(0%/< <($5 
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25
)6
/2*2
$66(0%/<
/27&2'(
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF6218S/LPbF
8www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
/2*2
5(&7,),(5
,17(51$7,21$/
/27&2'(
$66(0%/<
/2*2
5(&7,),(5
,17(51$7,21$/
'$7(&2'(
:((.
<($5 
3$57180%(5
$ $66(0%/<6,7(&2'(
25
352'8&7237,21$/
3 '(6,*1$7(6/($')5((
(;$03/( 7+,6,6$1,5//
/27&2'(
$66(0%/<
3$57180%(5
'$7(&2'(
:((.
/,1(&
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<($5 
$66(0%/('21::
,17+($66(0%/</,1(&
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF6218S/LPbF
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Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.6mH, RG = 25Ω, IAS = -17A.
ISD ≤ -17A, di/dt ≤ -520A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Rq is measured at TJ of approximately 90°C.
When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2008
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330. 00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/