Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400 - 1600 MHz. * Specified 26 Volts, 1490 MHz, Class AB Characteristics: Output Power -- 30 Watts Gain -- 9 dB Min @ 30 Watts (PEP) Efficiency -- 30% Min @ 30 Watts (PEP) Intermodulation Distortion -- - 30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON * Third Order Intercept Point -- 53.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc, IC = 2.5 Adc * Characterized with Series Equivalent Large-Signal Parameters from 1400-1600 MHz * Characterized with Small Signal S-Parameters from 1000 - 2000 MHz * Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at all Phase Angles with 3:1 Load VSWR @ 28 Vdc, at Rated Output Power * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 395C-01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 25 Vdc Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEBO 4 Vdc Collector-Current -- Continuous IC 10 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 125 0.71 Watts W/C Storage Temperature Range Tstg - 65 to +150 C Symbol Max Unit RJC 1.40 C/W Collector-Emitter Voltage THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 25 29 -- Vdc Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 64 -- Vdc Collector-Emitter Breakdown Voltage (IC = 50 mAdc, RBE = 100 ) V(BR)CER 30 52 -- Vdc OFF CHARACTERISTICS (continued) REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF15030 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)EBO 4 5 -- Vdc ICES -- -- 10 mAdc hFE 20 35 80 -- Cob -- 38 -- pF Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Gpe 9.0 9.6 -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) 30 34 -- % Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) IMD -- - 34 - 30 dBc Input Return Loss (VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) IRL 12 15 -- dB OFF CHARACTERISTICS -- continued Emitter-Base Breakdown Voltage (IE = 5 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (ICE = 1 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1 MHz) FUNCTIONAL TESTS (Figure 12) Load Mismatch (VCC = 28 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) No Degradation in Output Power TYPICAL CHARACTERISTICS Gpe Pout 35 40 10.2 35 10.1 30 10.0 25 9.9 20 9.8 15 9.7 VCC = 26 Vdc ICQ = 125 mA f = 1490 MHz Single Tone 10 5 0 0 1 2 3 Pin, INPUT POWER (WATTS) G pe , GAIN (dB) Pout , OUTPUT POWER (WATTS) 40 10.3 9.6 4 5 Pin = 3.5 W 30 25 2.5 W 20 15 10 1.5 W VCC = 26 Vdc ICQ = 125 mA Single Tone 9.5 5 9.4 0 1400 1420 1440 1460 1480 1500 1520 1540 1560 1580 1600 f, FREQUENCY (MHz) Figure 1. Output Power & Power Gain versus Input Power MRF15030 2 Pout , OUTPUT POWER (WATTS) 45 Figure 2. Output Power versus Frequency MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 5th - 40 7th VCC = 26 Vdc ICQ = 125 mA f1 = 1490 MHz f2 = 1490.1 MHz - 50 - 60 0 10 20 30 15 25 Pout, OUTPUT POWER (WATTS) PEP 5 35 9 G pe , POWER GAIN (dB) - 30 IMD, INTERMODULATION DISTORTION (dBc) 10 ICQ = 75 mA - 40 - 50 - 55 0.01 125 mA VCC = 26 Vdc f1 = 1490 MHz f2 = 1490.1 MHz 250 mA 1.0 10 30 1.75 VCC = 26 Vdc Pout = 30 W (PEP) ICQ = 125 mA 250 mA 20 22 24 26 VCE, COLLECTOR VOLTAGE (Vdc) Figure 7. Power Gain and Intermodulation Distortion versus Collector Voltage MOTOROLA RF DEVICE DATA VCC = 26 Vdc f1 = 1490 MHz f2 = 1490.1 MHz 75 mA 4 0.01 0.10 1.0 100 10 - 40 28 60 50 Pout , OUTPUT POWER (dBm) - 35 IMD, INTERMODULATION DISTORTION (dBc) G pe , POWER GAIN (dB) 9.5 8 18 1.00 1530 Figure 6. Power Gain versus Output Power - 30 8.5 1520 Pout, OUTPUT POWER (WATTS) PEP Gain Pout = 30 W (PEP) ICQ = 125 mA f1 = 1490 MHz f2 = 1490.1 MHz 1510 ICQ = 400 mA 125 mA 100 10.5 IMD 1480 1490 1500 f, FREQUENCY (MHz) 6 5 - 25 9 1470 7 Figure 5. Intermodulation Distortion versus Output Power 10 10 1.25 0 1460 Pout, OUTPUT POWER (WATTS) PEP 11 20 1.50 VSWR 8 400 mA 0.10 40 Figure 4. Performance in Broadband Circuit - 25 - 45 50 0 1450 40 Figure 3. Intermodulation Distortion versus Output Power - 35 Gpe INPUT VSWR G pe , POWER GAIN (dB) 3rd Order - 30 60 12 11 10 9 8 7 6 5 4 3 2 1 , COLLECTOR EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) - 20 40 Fundamental 30 20 10 0 Third Order -10 - 20 VCC = 24 Vdc IC = 2.5 A f1 = 1490 MHz f2 = 1490.1 MHz - 30 - 40 10 15 20 25 30 35 40 Pin, INPUT POWER (dBm) 45 50 Figure 8. Class A Third Order Intercept Point MRF15030 3 TYPICAL CHARACTERISTICS 109 MTBF FACTOR (HOURS x AMPS 2 ) MTBF Limited Tflange = 75 C 2.5 Tflange = 100C 2 Breakdown Limited I C , COLLECTOR CURRENT (Adc) 3 1.5 1 TJ = 175C 0.5 0 0 4 8 12 20 16 VCE, COLLECTOR VOLTAGE (Vdc) 28 24 108 107 106 105 104 100 120 Figure 9. DC Safe Operating Area 140 180 220 160 200 TJ, JUNCTION TEMPERATURE (C) 240 260 Figure 10. MTBF Factor versus Junction Temperature The above graph displays calculated MTBF in hours x ampere2 emitter current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF Factor by IC2 for MTBF in a particular application. 1.5 1.4 1.55 f = 1.6 GHz 1.45 Zin ZOL* Zo = 10 1.5 f = 1.6 GHz 1.4 1.55 1.45 f (GHz) Zin () Z*OL () 1.40 1.15 + j4.25 1.87 + j0.78 1.45 1.15 + j4.55 1.67 + j0.78 1.50 1.20 + j4.80 1.47 + j0.78 1.55 1.45 + j5.15 1.27 + j0.78 1.60 1.89 + j5.25 1.00 + j0.78 Z*OL = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency. Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ Pout = 30 Watts (PEP), VCC = 26 Volts, ICQ = 125 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz MRF15030 4 MOTOROLA RF DEVICE DATA Table 1. Small Signal S Parameters at VCE = 24 Vdc, IC = 2.5 Adc f S11 MHz S21 |S11| 0.983 0.984 0.978 0.975 0.975 0.969 0.963 0.955 0.945 0.933 0.915 0.889 0.856 0.833 0.820 0.839 0.872 0.909 0.937 0.957 0.970 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 |S21| 0.366 0.367 0.367 0.373 0.382 0.391 0.408 0.428 0.452 0.487 0.525 0.572 0.618 0.654 0.654 0.600 0.517 0.435 0.357 0.296 0.247 173 172 172 171 171 170 169 169 168 167 166 166 166 168 171 174 175 176 175 174 173 Vbias 49 46 43 40 36 33 29 25 20 13 6 -3 -16 - 30 - 48 - 66 - 81 - 94 -104 -112 -119 S22 |S12| 0.006 0.007 0.007 0.007 0.008 0.007 0.008 0.009 0.008 0.009 0.009 0.009 0.009 0.010 0.010 0.010 0.010 0.010 0.011 0.012 0.012 |S22| 0.890 0.893 0.888 0.885 0.886 0.881 0.879 0.879 0.873 0.875 0.875 0.877 0.887 0.901 0.918 0.930 0.932 0.925 0.924 0.917 0.915 36 33 33 30 31 27 21 20 7 1 -8 -18 - 35 - 54 - 86 -120 -152 -176 159 148 136 178 178 178 178 177 177 177 177 177 178 178 178 178 178 178 177 176 174 173 173 173 R4 R1 R5 Q3 Q2 R3 D1 R6 B2 + Q1 S12 C2 R2 C3 D2 B1 C5 C7 B3 B4 C11 L1 VCC + C13 C14 L2 C10 RF Input N1 RF Output N2 DUT C6 C1 B1, B4 B2, B3 C1 C2 C3, C14 C4, C8 C5, C11 C6, C12 C7, C10 C9 C13 C12 C4 C8 Long Bead, Fair Rite Short Bead, Fair Rite 0.3 pF, B Case Chip Capacitor, ATC 220 F, Electrolytic Capacitor, Mallory 0.1 F, Chip Capacitor, Kemit 0.8 to 8 pF, Variable Capacitor, Johanson 1800 pF, Chip Capacitor, Kemit 18 pF, B Case Chip Capacitor, ATC 51 pF, Chip Capacitor, Murata Erie 1.7 pF, B Case Chip Capacitor, ATC 470 F, Electrolytic Capacitor, Mallory D1 D2 L1, L2 N1, N2 Q1 Q2, Q3 R1 R2 R3, R6 R4 R5 Board C9 Surface Mount Diode, Motorola Light Emitting Diode, Industrial Devices 3 Turn, 20 AWG, 0.126 ID Choke Type N Flange Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor, NPN, Motorola (MJD47) 2 x 330 , 1/8 Watt Chip Resistors in Parallel, Rohm 100 , 1/8 Watt, Chip Resistor, Rohm 4 x 38 , 1/8 Watt, Chip Resistors in Parallel, Rohm 39 , 1/8 Watt, Chip Resistor, Rohm 22 K, 1/8 Watt, Chip Resistor, Rohm Glass Teflon, Arlon GX-0300-55-22, r = 2.55 Figure 12. Class AB Broadband Test Fixture Electrical Schematic MOTOROLA RF DEVICE DATA MRF15030 5 V Supply + C1 R5 R1 Q1 VCC R2 Q2 R6 R9 R3 R4 R7 R10 R8 B2 + C2 C3 B1 C6 C8 L1 L2 RF Output N2 DUT C5 C4 VCC + C13 C14 C11 C10 RF Input N1 B1, B4 B2, B3 C1, C2 C3, C14 C4 C5, C12 C6, C11 C7, C9 C8, C10 C13 L1, L2 N1, N2 B4 B3 C12 C7 Long Bead, Fair Rite Short Bead, Fair Rite 100 F, Electrolytic Capacitor, Mallory 0.1 F, Chip Capacitor, Kemit 1.3 pF, B Case Chip Capacitor, ATC 18 pF, B Case Chip Capacitor, ATC 1800 pF, Chip Capacitor, Kemit 0.8 to 8 pF, Variable Capacitor, Johanson 51 pF, Chip Capacitor, Murata Erie 470 F, Electrolytic Capacitor, Mallory 3 Turn, 20 AWG, 0.126 ID Choke Type N Flange Mount RF Connector, Omni Spectra C9 Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 , 1/8 Watt, Chip Resistor Rohm 500 , 1/4 Watt Potentiometer, State of the Art 4.7 K, 1/8 Watt, Chip Resistor, Rohm 2 x 4.7 K, 1/8 Watt, Chip Resistors in Parallel, Rohm 1.0 , 10 Watt, Resistor, Dale 38 , 1.0 Watt, Resistor 75 , 1/8 Watt, Chip Resistor, Rohm 2 x 10 , 1/8 Watt, Chip Resistors in Parallel, Rohm 4 x 38 , 1/8 Watt, Chip Resistors in Parallel, Rohm Glass Teflon, Arlon GX-0300-55-22, r = 2.55 Figure 13. Class A Test Fixture Electrical Schematic MRF15030 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS -A- U Q 2 PL 1 0.51 (0.020) M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. -B- 3 K 2 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER D N E DIM A B C D E H J K N Q U INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.215 0.225 0.055 0.070 0.079 0.091 0.004 0.006 0.210 0.240 0.315 0.330 0.125 0.135 0.560 BSC MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 5.46 5.72 1.40 1.78 2.01 2.31 0.10 0.15 5.33 6.10 8.00 8.38 3.18 3.42 14.23 BSC J H C -T- SEATING PLANE CASE 395C-01 ISSUE A MOTOROLA RF DEVICE DATA MRF15030 7 Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF15030 8 *MRF15030/D* MRF15030/D MOTOROLA RF DEVICE DATA