A2T18H410--24SR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 71 W asymmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications covering the frequency range of 1805 to
1880 MHz.
1800 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Vdc,
IDQA = 800 mA, VGSB =0.8Vdc,P
out = 71 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz 17.4 51.2 7.9 –34.5
1840 MHz 17.5 50.1 8.3 –36.9
1880 MHz 17.6 49.3 8.0 –36.8
Features
Advanced High Performance In--Package Doherty
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Document Number: A2T18H410--24S
Rev. 0, 5/2015
Freescale Semiconductor
Technical Data
1805–1880 MHz, 71 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
A2T18H410--24SR6
NI--1230S--4L2L
(Top View)
RFoutA/VDSA
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
VBWA(1)
6
3
15
24
Carrier
Peaking
Figure 1. Pin Connections
VBWB(1)
1. Device cannot operate with the VDD current
supplied through pin 3 and pin 6.
Freescale Semiconductor, Inc., 2015. All rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
A2T18H410--24SR6
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +65 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC–40 to +150 C
Operating Junction Temperature Range (1,2) TJ–40 to +225 C
CW Operation @ TC=25C
Derate above 25C
CW 282
1.5
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 72C, 71 W Avg., W--CDMA, 28 Vdc, IDQA = 800 mA, VGSB =0.8Vdc,
1840 MHz
RJC 0.24 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =32Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics -- Side A (Carrier)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 160 Adc)
VGS(th) 1.4 1.5 2.3 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
DA = 800 mAdc, Measured in Functional Test)
VGS(Q) 2.2 2.6 3.0 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.6Adc)
VDS(on) 0.1 0.15 0.3 Vdc
On Characteristics -- Side B (Peaking)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 270 Adc)
VGS(th) 0.8 1.2 1.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2.7Adc)
VDS(on) 0.1 0.15 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf/calculators.
3. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
4. Each side of device measured separately.
(continued)
A2T18H410--24SR6
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1,2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 800 mA, VGSB =0.8Vdc,P
out =71WAvg.,
f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 16.5 17.4 19.5 dB
Drain Efficiency D47.0 51.2 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.4 7.9 —dB
Adjacent Channel Power Ratio ACPR —–34.5 –28.0 dBc
Load Mismatch (2) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 800 mA, VGSB = 0.8 Vdc, f = 1840 MHz
VSWR 10:1 at 32 Vdc, 440 W CW (3) Output Power
(3 dB Input Overdrive from 376 W CW (3) Rated Power)
No Device Degradation
Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 800 mA, VGSB =0.8Vdc,
1805–1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —355 (3) — W
Pout @ 3 dB Compression Point (4) P3dB —457 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–1880 MHz frequency range)
—–12.4 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —90 —MHz
Gain Flatness in 75 MHz Bandwidth @ Pout =71WAvg. GF—0.1 —dB
Gain Variation over Temperature
(–30Cto+85C)
G — 0.0056 —dB/C
Output Power Variation over Temperature
(–30Cto+85C) (3)
P1dB —0.0077 —dB/C
Table 5. Ordering Information
Device Tape and Reel Information Package
A2T18H410--24SR6 R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel NI--1230S--4L2L
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4
RF Device Data
Freescale Semiconductor, Inc.
A2T18H410--24SR6
Figure 2. A2T18H410--24SR6 Test Circuit Component Layout
CUT OUT AREA
A2T18H410
Rev. 4
D68602
VDDB VDDA
VDDA
VGGB
C10
C1
C2
R2
C4
C6
C5
C3
Z1
R1
C9
C19
C17
C11
C12
C13
C14
C15
C16
C18
C7
C8
R3
Table 6. A2T18H410--24SR6 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C7, C9, C14, C16, C19 10 uF Chip Capacitors C5750X7S2A106M230KB TDK
C2, C8, C10, C15 12 pF Chip Capacitors ATC100B120JT500XT ATC
C3 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC
C4, C6 6.2 pF Chip Capacitors ATC100B6R2BT500XT ATC
C5, C11 1.0 pF Chip Capacitors ATC100B1R0CT500XT ATC
C12 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC
C13 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC
C17, C18 470 uF, 63 V Electrolytic Capacitors MCGPR63V477M13X26 Multicomp
R1 50 Termination CW12010T0050GBK ATC
R2, R3 2.7 , 1/4 W Chip Resistors CRCW12062R7FKEA Vishay
Z1 1700–2000 MHz Band, 5 dB Directional Coupler X3C19P1-05S Anaren
PCB Rogers RO4350B, 0.020,r=3.66 D68602 MTL
A2T18H410--24SR6
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
PARC (dB)
–2.2
–1.4
–1.6
–1.8
–2
–2.4
1760
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 71 Watts Avg.
16.8
17.8
17.7
17.6
–42
56
54
52
50
–27
–30
–33
–36
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
17.5
17.4
17.3
17.2
17.1
17
16.9
1780 1800 1820 1840 1860 1880 1900 1920
48
–39
ACPR (dBc)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
–70
–10
–20
–30
–50
1 500
IMD, INTERMODULATION DISTORTION (dBc)
–40
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
–1
–3
50
0
–2
–4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
25 75 100 150
30
60
55
50
45
40
35
DDRAIN EFFICIENCY (%)
125
D
PARC
ACPR (dBc)
–42
–30
–32
–34
–38
–36
–40
17.8
Gps, POWER GAIN (dB)
17.6
17.4
17.2
17
16.8
16.6
Gps
–5
1
ACPR
D
PARC
Gps
IM5--L
IM7--L IM7--U
IM3--L
100
–1 dB = 55 W
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
–2 dB = 78.1 W
–3 dB = 100 W
–60
ACPR
IM5--U
IM3--U
VDD =28Vdc,P
out = 8 W (PEP), IDQA = 800 mA
VGSB = 0.8 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
VDD =28Vdc,P
out =71W(Avg.),I
DQA = 800 mA
VGSB = 0.8 Vdc, Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
VDD =28Vdc,I
DQA = 800 mA, VGSB =0.8Vdc
f = 1840 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
6
RF Device Data
Freescale Semiconductor, Inc.
A2T18H410--24SR6
TYPICAL CHARACTERISTICS
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
–10
–20
10
22
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
20
18
10 100 500
10
–60
ACPR (dBc)
16
14
12
0
–30
–40
–50
Figure 7. Broadband Frequency Response
10
22
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 800 mA
VGSB =0.8Vdc
18
16
14
GAIN (dB)
20
12
1600 1680 1760 1840 1920 2000 2080 2160 2240
Gain
ACPR
D
1805 MHz
VDD =28Vdc,I
DQA = 800 mA, VGSB =0.8Vdc
Single--Carrier W--CDMA
Gps
1880 MHz
1840 MHz
1805 MHz
1840 MHz
1880 MHz
1805 MHz
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
1840 MHz 1880 MHz
A2T18H410--24SR6
7
RF Device Data
Freescale Semiconductor, Inc.
Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQA = 785 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.32 – j3.98 1.36 + j3.59 1.01 – j3.41 18.7 52.6 181 58.4 –12
1840 1.57 – j4.28 1.50 + j3.86 0.98 – j3.56 18.7 52.6 183 58.3 –12
1880 2.23 – j4.77 1.99 + j4.16 0.98 – j3.75 18.6 52.6 181 57.2 –12
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.32 – j3.98 1.22 + j3.74 1.02 – j3.56 16.5 53.3 215 59.4 –15
1840 1.57 – j4.28 1.37 + j4.04 0.99 – j3.72 16.5 53.4 217 59.2 –15
1880 2.23 – j4.77 1.87 + j4.43 1.00 – j3.90 16.4 53.3 214 58.3 –16
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,I
DQA = 785 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.32 – j3.98 1.35 + j3.89 2.22 – j2.08 22.4 49.9 98 72.1 –19
1840 1.57 – j4.28 1.55 + j4.11 2.07 – j2.49 22.0 50.3 108 71.1 –17
1880 2.23 – j4.77 2.11 + j4.44 1.93 – j2.67 21.8 50.4 109 70.0 –18
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.32 – j3.98 1.20 + j3.91 2.04 – j2.31 20.1 51.1 128 73.3 –25
1840 1.57 – j4.28 1.38 + j4.21 1.96 – j2.52 19.9 51.2 130 72.5 –24
1880 2.23 – j4.77 1.94 + j4.64 1.93 – j2.64 19.9 51.0 127 71.4 –24
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
A2T18H410--24SR6
Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,V
GSB =0.8mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.32 – j3.98 1.55 + j4.16 1.38 – j3.61 15.9 54.9 312 57.4 –33
1840 1.84 – j4.30 1.90 + j4.53 1.22 – j3.80 15.6 55.1 321 54.6 –32
1880 2.67 – j4.46 2.83 + j4.90 1.40 – j3.92 16.0 55.0 315 56.4 –33
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.32 – j3.98 1.59 + j4.36 1.35 – j3.73 13.7 55.7 370 59.3 –40
1840 1.84 – j4.30 2.01 + j4.79 1.19 – j3.91 13.4 55.8 380 57.1 –39
1880 2.67 – j4.46 3.20 + j5.21 1.38 – j4.21 13.6 55.7 372 57.3 –39
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,V
GSB =0.8mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.32 – j3.98 1.39 + j4.15 3.59 – j2.93 17.2 53.0 201 69.3 –41
1840 1.84 – j4.30 1.67 + j4.51 3.49 – j2.75 17.2 53.1 204 69.4 –40
1880 2.67 – j4.46 2.45 + j4.92 3.12 – j2.36 17.3 53.0 199 68.8 –41
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.32 – j3.98 1.52 + j4.38 3.30 – j3.71 14.8 53.9 248 66.3 –47
1840 1.84 – j4.30 1.91 + j4.81 2.68 – j3.69 14.8 54.7 292 66.2 –45
1880 2.67 – j4.46 2.96 + j5.27 2.97 – j3.26 15.0 54.3 269 66.9 –47
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
A2T18H410--24SR6
9
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
P
E
P
E
P
E
E
–5
–1
–1.5
IMAGINARY ()
22.5
0.5 3.5
–3
1.5
–3.5
–4
3
–2
–2.5
–4.5
1
–5
–1
–1.5
IMAGINARY ()
22.5
0.5 3.5
–3
1.5
–3.5
–4
3
–2
–2.5
–4.5
1
–5
–
1
–1.5
IMAGINARY ()
22.5
0.5 3.5
–3
1.5
–3.5
–4
3
–2
–2.5
–4.5
1
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Figure 8. P1dB Load Pull Output Power Contours (dBm)
REAL ()
–5
–
1
–1.5
IMAGINARY ()
22.5
0.5 3.5
–3
1.5
Figure 9. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
REAL ()
50.5
51
P
E
P
E
P
E
P
E
48.5
49
49.5
50
52
60
56
66
70
68
64 62
22.5
23
22
21.5
21
20.5
20
19.5
19
–18
–20 –14
–16
–3.5
–4
3
–2
–2.5
–4.5
1
51.5
52.5
-- 1 0
–22
–24
–10 –10
–10
–12
58
10
RF Device Data
Freescale Semiconductor, Inc.
A2T18H410--24SR6
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
P
E
P
E
P
E
P
E
–5
–1
–1.5
IMAGINARY ()
22.5
0.5 3.5
–3
1.5
–3.5
–4
3
–2
–2.5
–4.5
1
–5
–1
–1.5
IMAGINARY ()
22.5
0.5 3.5
–3
1.5
–3.5
–4
3
–2
–2.5
–4.5
1
–5
–
1
–1.5
IMAGINARY ()
22.5
0.5 3.5
–3
1.5
–3.5
–4
3
–2
–2.5
–4.5
1
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Figure 12. P3dB Load Pull Output Power Contours (dBm)
REAL ()
–5
–
1
–1.5
IMAGINARY ()
22.5
0.5 3.5
–3
1.5
Figure 13. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
REAL ()
51.5
52
P
E
P
E
P
E
P
E
50
50.5
51
49.5
53
68
70
72
64
66
20.5
18.5
1817.5
17
16.5
–26 –24 –22
–3.5
–4
3
–2
–2.5
–4.5
1
52.5
56 58
–18
66
–28
–30
–16
–14
60
62
–20
20
19.5
19
A2T18H410--24SR6
11
RF Device Data
Freescale Semiconductor, Inc.
P1dB – TYPICAL PEAKING LOAD PULL CONTOURS — 1840 MHz
P
E
P
E
P
E
P
E
0
–2
–1
–4
–5
–3
0
–2
–1
–4
–5
–3
0
–2
–1
–4
–5
–3
IMAGINARY ()
22.5161.5 3 3.5 4 4.5 5 5.5
IMAGINARY ()
22.5161.5 3 3.5 4 4.5 5 5.5
IMAGINARY ()
22.5161.5 3 3.5 4 4.5 5 5.5
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Figure 16. P1dB Load Pull Output Power Contours (dBm)
REAL ()
0
–2
IMAGINARY ()
22.516
–1
–4
–5
1.5
Figure 17. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 18. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 19. P1dB Load Pull AM/PM Contours ()
REAL ()
3
E
–3
3.5 4 4.5 5 5.5
E
P
52.5
54.5
51.5
51
52
53.5
54 53
E
60
68
62
64
66
58
62
P
17.5
16.5
16
17
16
18
E
P
P
–38
–42
–44
58
55
56
54
15.5
15 –34 –36
–32
–30
–28
56
–40
12
RF Device Data
Freescale Semiconductor, Inc.
A2T18H410--24SR6
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
P
E
P
E
P
E
P
E
–6
–2
–2.5
45
17
–4
3
–4.5
–5
6
–3
–3.5
–5.5
2
–6
–2
–2.5
45
17
–4
3
–4.5
–5
6
–3
–3.5
–5.5
2
–6
–
2
–2.5
45
17
–4
3
–4.5
–5
6
–3
–3.5
–5.5
2
IMAGINARY ()
IMAGINARY ()
IMAGINARY ()
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Figure 20. P3dB Load Pull Output Power Contours (dBm)
REAL ()
–6
–
2
–2.5
IMAGINARY ()
45
17
–4
3
Figure 21. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 22. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 23. P3dB Load Pull AM/PM Contours ()
REAL ()
52.5 52
P
E
P
E
P
E
P
E
53
53.5
54
54.5
55
64 62
60
58
56
54
15.5
15
14.5
14
13.5
12.5
13
–44
–46
–48
–50
–4.5
–5
6
–3
–3.5
–5.5
2
66
52.5
52
55.5
52
–40
–42
–38
–36
50
50 52
–50
12 –34
A2T18H410--24SR6
13
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
14
RF Device Data
Freescale Semiconductor, Inc.
A2T18H410--24SR6
A2T18H410--24SR6
15
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0May 2015 Initial Release of Data Sheet
16
RF Device Data
Freescale Semiconductor, Inc.
A2T18H410--24SR6
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All
other product or service names are the property of their respective owners.
E2015 Freescale Semiconductor, Inc.
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Document Number: A2T18H410--24S
Rev. 0, 5/2015
