ON Semiconductor Silicon NPN High-Power Transistor 2N5882 ON Semiconductor Preferred Device . . . designed for general-purpose power amplifier and switching applications. * Collector-Emitter Sustaining Voltage -- * * * 15 AMPERE SILICON POWER TRANSISTOR 80 VOLTS 160 WATTS VCEO(sus) = 80 Vdc (Min) DC Current Gain -- hFE = 20 (Min) @ IC = 6.0 Adc Low Collector -- Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 7.0 Adc High Current -- Gain-Bandwidth Product -- fT = 4.0 MHz (Min) @ IC = 1.0 Adc IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIII IIII IIIIIIIIIIIII IIIII IIII IIII IIIIIIIIIIIII IIIII IIII IIII IIIIIIIIIIIII IIIII IIII IIII IIIIIIIIIIIII IIIII IIII IIII IIIIIIIIIIIII IIIII IIII IIII IIIIIIIIIIIII IIIII IIII IIII IIIIIIIIIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIII IIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III MAXIMUM RATINGS (1) Rating Collector-Emitter Voltage Symbol Max Unit VCEO 80 Vdc Collector-Base Voltage VCB 80 Vdc Emitter-Base Voltage VEB 5.0 Vdc IC 15 30 Adc Collector Current -- Continuous Peak Base Current IB 5.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 160 0.915 Watts W/C TJ, Tstg -65 to +200 C Operating and Storage Junction Temperature Range CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit JC 1.1 C/W (1) Indicates JEDEC registered data. Units and conditions differ on some parameters and re-registration reflecting these changes has been requested. All above values meet or exceed present JEDEC registered data. PD, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 1 Publication Order Number: 2N5882/D 2N5882 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIII IIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIII IIIII III IIII III IIIIIIIII IIIIIIIIIIIIII IIIII III IIII III *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 80 -- -- 1.0 -- -- 0.5 5.0 -- 0.5 -- 1.0 35 20 4.0 -- 100 -- -- -- 1.0 4.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (2) (IC = 200 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) ICEX Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 2.0 Adc, VCE = 4.0 Vdc) (IC = 6.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (2) (IC = 7.0 Adc, IB = 0.7 Adc) (IC = 15 Adc, IB = 3.75 Adc) VCE(sat) Vdc Base-Emitter Saturation Voltage (1) (IC = 15 Adc, IB = 3.75 Adc) VBE(sat) -- 2.5 Vdc Base-Emitter On Voltage (2) (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) -- 1.5 Vdc fT 4.0 -- MHz -- 400 DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (3) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Cob pF Small-Signal Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 20 -- -- SWITCHING CHARACTERISTICS Rise Time (VCC = 30 Vdc, Vdc IC = 6.0 6 0 Adc, Adc IB1 = IB2 = 0 0.6 6 Adc See Figure 2) Storage Time Fall Time tr -- 0.7 s ts -- 1.0 s tf -- 0.8 s *Indicates JEDEC Registered Data. (2) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% (3) fT = |hfe| * ftest. VCC -30 V 2.0 5.0 +10 V RC SCOPE 15 0 51 D1 -8.0 V 25 s tr, tf 10 ns DUTY CYCLE = 1.0% For PNP test circuit, reverse all polarities. 0.7 0.5 t, TIME (s) RB +7.0 V FOR CURVES OF FIGURES 3 and 6, RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.3 tr 0.2 0.1 0.07 0.05 0.03 0.02 0.2 0.3 D1 MUST BE FAST RECOVERY TYPE, e.g. 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA VCC = 30 V IC/IB = 10 TJ = 25C 1.0 Figure 2. Switching Times Test Circuit td @ VBE(off) 5.0 V 2.0 3.0 5.0 7.0 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn-On Time http://onsemi.com 2 10 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N5882 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 D = 0.5 0.2 0.05 0.02 0.01 0.03 0.02 P(pk) JC(t) = r(t) JC JC = 1.1C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.1 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 2.0 3.0 5.0 t, TIME (ms) 1.0 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 100 1.0 ms IC, COLLECTOR CURRENT (AMP) 50 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 TJ = 200C 5.0 ms 0.5 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.1 ms dc SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active-Region Safe Operating Area 2000 10 7.0 5.0 TJ = 25C VCC = 30 V IC/IB = 0 IB1 = IB2 2.0 1000 C, CAPACITANCE (pF) t, TIME (s) 3.0 TJ = 25C ts 1.0 0.7 0.5 tf 0.3 0.2 0.1 0.2 700 Cib 500 300 200 Cob 100 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 10 60 0.1 20 Figure 6. Turn-Off Time 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 3 50 100 VCE = 4.0 V TJ = +150C 300 200 25C 100 70 50 -55C 30 20 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 10 20 2.0 TJ = 25C 1.6 IC = 3.0 A 6.0 A 0.8 0.4 0 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mAdc) TJ = 25C 1.6 1.2 0.4 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0 0.2 0.3 2.0 3.0 Figure 9. Collector Saturation Region 2.0 0.8 12 A 1.2 Figure 8. DC Current Gain V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 1000 700 500 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N5882 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltage http://onsemi.com 4 10 20 2N5882 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N5882 Notes http://onsemi.com 6 2N5882 Notes http://onsemi.com 7 2N5882 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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