2N5882 - ON Semiconductor - Datasheet.Directory

Silicon NPN High-Power

Transistor

. . . designed for general–purpose power amplifier and switching

applications.

•Collector–Emitter Sustaining Voltage —

VCEO(sus) = 80 Vdc (Min)

•DC Current Gain —

hFE = 20 (Min) @ IC = 6.0 Adc

•Low Collector — Emitter Saturation Voltage —

VCE(sat) = 1.0 Vdc (Max) @ IC = 7.0 Adc

•High Current — Gain–Bandwidth Product —

fT = 4.0 MHz (Min) @ IC = 1.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎ

80

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎ

80

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎ

5.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎÎ

IC

ÎÎÎÎ

15

30

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

IB

ÎÎÎÎ

5.0

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25C

Derate above 25C

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

PD

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

160

0.915

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎ

–65 to +200

ÎÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

1.1

ÎÎÎ

C/W

(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and

re–registration reflecting these changes has been requested. All above values meet or

exceed present JEDEC registered data.

PD, POWER DISSIPATION (WATTS)

160

00 25 50 75 100 125 150 175 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

120

80

40

20

140

100

60

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 2 1Publication Order Number:

2N5882/D

2N5882

ON Semiconductor Preferred Device

15 AMPERE

SILICON

POWER TRANSISTOR

80 VOLTS

160 WATTS

CASE 1–07

TO–204AA

(TO–3)

2N5882

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2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (2)

(IC = 200 mAdc, IB = 0)

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

80

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEX

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.5

5.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICBO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.5

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 2.0 Adc, VCE = 4.0 Vdc)

(IC = 6.0 Adc, VCE = 4.0 Vdc)

(IC = 15 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

35

20

4.0

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

100

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (2)

(IC = 7.0 Adc, IB = 0.7 Adc)

(IC = 15 Adc, IB = 3.75 Adc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

4.0

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (1) (IC = 15 Adc, IB = 3.75 Adc)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (2) (IC = 6.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (3)

(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

fT

ÎÎÎ

Î

ÎÎÎ

4.0

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 100 kHz)

ÎÎÎÎÎ

Cob

ÎÎÎ

—

ÎÎÎÎ

400

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

20

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(V 30 Vdc I 6 0 Adc

ÎÎÎÎÎ

tr

ÎÎÎ

—

ÎÎÎÎ

0.7

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 6.0 Adc,

IB1 =I

B2 = 0 6 Adc See Figure 2)

ÎÎÎÎÎ

ts

ÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

I

B1 =

I

B2 =

0

.

6

Ad

c

S

ee

Fi

gure

2)

ÎÎÎÎÎ

tf

ÎÎÎ

—

ÎÎÎÎ

0.8

ÎÎÎ

µs

*Indicates JEDEC Registered Data.

(2) Pulse Test: Pulse Width  300 µs, Duty Cycle  2.0%

(3) fT = |hfe| • ftest.

Figure 2. Switching Times Test Circuit

25 µs

0

-8.0 V

RB

+7.0 V

D1

SCOPE

VCC

-30 V

RC

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

51

D1 MUST BE FAST RECOVERY TYPE, e.g.

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

FOR CURVES OF FIGURES 3 and 6,

RB and RC ARE VARIED TO OBTAIN

DESIRED CURRENT LEVELS

For PNP test circuit,

reverse all polarities.

5.0

15

+10 V

Figure 3. Turn–On Time

2.0

0.2

IC, COLLECTOR CURRENT (AMP)

0.7

0.2

0.1

0.02 0.3 0.5 0.7 1.0 3.0

VCC = 30 V

IC/IB = 10

TJ = 25°C

0.07

t, TIME (s)µ

tr

2.0

0.5

1.0

10

0.05

0.03

5.0 7.0

td @ VBE(off) ≈ 5.0 V

0.3

2N5882

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3

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

r

(

t

)

, EFFE

C

TIVE TRAN

S

IENT THERMAL

RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

θJC(t) = r(t) θJC

θJC = 1.1°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

SINGLE PULSE

0.1

0.02 0.03 0.3 3.0 30 300

0.01

100

1.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

50

30

20

10

0.1 2.0 3.0 7.0 10 100

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION @ TC = 25°C

(SINGLE PULSE)

70

5.0

IC, COLLECTOR CURRENT (AMP)

TJ = 200°C

CURVES APPLY BELOW RATED VCEO

dc

3.0

0.5

0.3

5.0

0.2

0.1 ms

2.0

1.0

20 30 50

0.5 ms

1.0 ms

5.0 ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 200C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

10

0.2

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

5.0

3.0

0.7

0.3

0.1 0.3 0.5 0.7 1.0 3.0 7.0 20

TJ = 25°C

VCC = 30 V

IC/IB = 0

IB1 = IB2

0.2

t, TIME (s)µ

ts

2.0

2000

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

60 2.0 5.0 10 20 1000.2 0.5 1.0

C, CAPACITANCE (pF)

1000

500

100

TJ = 25°C

Cib

2.0

7.0

10

700

5.0

tfCob

1.0

0.5

300

200

50

2N5882

http://onsemi.com

4

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

2.0

IB, BASE CURRENT (mAdc)

0

0.8

0.4

TJ = 25°C

1.2

1.6

Figure 10. “On” Voltage

2.0

IC, COLLECTOR CURRENT (AMP)

1.6

1.2

0.8

0.4

0

TJ = 25°C

V, VOLTAGE (VOLTS)

1000

0.2

IC, COLLECTOR CURRENT (AMP)

10 0.3 0.5 0.7 2.0 3.0 5.0 7.0 20

70

30

20

100

50

hFE, DC CURRENT GAIN

TJ = +150°C

25°C

-55°C

200

500

VCE = 4.0 V

1.0 10

700

300

0.03 0.05 0.1 0.2 0.5 3.00.07 0.3 0.7 1.0 2.0

IC = 3.0 A 6.0 A 12 A

0.2 0.3 0.5 0.7 1.0 2.0 5.0 7.0 20103.0

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 2.0 V

2N5882

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5

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

A

N

E

C

K

–T– SEATING

PLANE

2 PL

D

M

Q

M

0.13 (0.005) Y M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

UL

GB

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

2N5882

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6

Notes

2N5882

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7

Notes

2N5882

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8

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