TC74HC10AP/AF/AFN TRIPLE 3-INPUT NAND GATE The TC74HC1OA is a high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate C?MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power 14 dissipation. The internal circuit is composed of 3 stages including | buffer output, which provide high noise immunity and P(DIP14~P~300) stable output. All inputs are equipped with protection circuits against 14 14 static discharge or transient excess voltage. 1 1 FEATURES: High Speed s-++-+ssessssssessseeeseensases tpd=6na(typ.) at Voc=5V F(SOP14P-300) FN(SOL14~P-150) * Low Power Dissipation --+++++++++++ Iq =1# A(Max.)at Ta=25 * High Noise Immunity +--+ Vain = V sit =28% Voc (Min. ) PIN ASSIGNMENT * Output Drive Capability ---+------- 10 LSTTL Loads Symmetrical Output Impedance -- | I qqy| =I q. =4mA(Min.) * Balanced Propagation Delays +--+ teLH *tpHL 1A 1 o * Wide Operating Voltage Range --- Voc(opr)=2V~6V 14 Voc * Pin and Function Compatible with 74LS10 1B a ys 1c za 30 yi2 1 2e 4[ it 3c 2c 5 io 3B 2y 6{ 9 3A eno 7 le 3 (TOP VIEW) 1EC LOGIC SYMBOL TRUTH TABLE : Don't Care HC-153TC74HC10AP/AF/AFN ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Supply Voltage Range Voc -0.5~7 v *500mW in the range of Ta= DC Input Voltage Vix -0.5 ~Vo $0.5 Vv im a jevating tacorete DC Output Voltage Vout -0.5 ~ Vee + 0.5 Vv -10mW/*C shall be applied Input Diode Current lik +20 mA until 300mW. Output Diode Current Ly. +20 mA DC Output Current lt +25 mA DC V.,/Ground Current loc +50 mA Power Dissipation P, 500(DIP)+/180(MFP) mW Storage Temperature Tstg ~65 ~150 Cc Lead Temperature 10sec | T,, 300 fo RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL VALUE UNIT Supply Voltage Vec 2~6 Vv Input Voltage Vix 0~ Ver Vv Output Voltage Vor O~ Vig Vv Operating Temperature | Topr -40 ~ 85 c 0 ~ 1000(Vi.=2.0V) Input Rise and Fall Time itr, tt O~ 5000 Yc =4.5V) ns | 0~ 400(Vp-=6.0V) DC ELECTRICAL CHARACTERISTICS PARAMETER |SYMBOL} TEST CONDITION py pyy- Ta ee UNIT HichLevel 20, 15 | Trs | Innat Voltage Vin Se : > _ _ , _ V Low-Level 2.0 ~ 7 0.5 ~ 0. 5 Input Voltage Vu. ee - _ a - re Vv 2.0] 1.9 | 2.0 - 1.9 ~ High-Level | vy, | Yea VU eA OL Sa | eo | - | ee | dv Output Voltage Wier. Typed mAT 45 | 418 (aay > | asp lai =-5.2mA] 6.0 | 5.68 | 5.80 = 5. 63 = 2.0 - | 0.0 0.1 - 0.1 low-twl j wy fYosy Pmcmea|eel = Eee | ah kn Output Voltage - VyyorVy. Tasd mAT 45 = 017 0-26 0-33 Iu, =3,2mA16.0| - | 0.18! 0.26) - | 0.33 Input Leakage Current Thy Vix =Vec or GND 6.0 - = | +02 - =1,0 Quiescent Supply Current [cc | Vw =Vec or GND 6.0 - = | 10 ~ 10.0 uA HC-154AC ELECTRICAL CHARACTERISTICS(C, =18pF, Voc=5V, Ta =26%, Input t,=t;=6ns) TC74HC10AP/AF/AFN PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. |UNIT Output Transition Time Tt - 4 8 tTul. ns Propagation Delay Time at - 6 12 pul. AC ELECTRICAL CHARACTERISTICS(C_=50pF Input t,=t, =6ns) Ts Ta=35 Ta=-40 ~85C PARAMETER SYMBOL | TEST CONDITION Vc | MIN. | TYP. [MAX] MIN. | MAX. UNIT t- 2.0 - 25 15 - 95 Output Transition Time | | lt 4.5 - 7 15 - 19 TUL. 6.0 | - 6 13 - 16 | os : 201, - 1 27 75 | > 95 Propagation Delay Time a 4.5 - 9 15 - 19 vill. 6.0 = 8 13 = 16 Input Capacitance Ci - 5 10 ~ 10 F Power Dissipation Capacitance { Cyyp(1) = 23 = ~ = P Note(1) Cy) is defined as the value of the internal equivalent capacitance which operating current consumption without load. Average operating current can be obtained by the equation: lec cpe=C poe Ver ef intl qc /ACper Gate) HC-155 is calculated from the