FQA140N10 N-Channel QFET MOSFET 100 V, 140 A, 10 m Description Features This N-Channel enhancement mode power MOSFET is (R) produced using Fairchild Semiconductor 's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * 140 A, 100 V, RDS(on) = 10 m (Max) @VGS = 10 V, ID = 70 A * Low Gate Charge (Typ. 220 nC) * Low Crss (Typ. 470 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating D G TO-3P G DS ID S FQA Series Absolute Maximum Ratings Symbol VDSS TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQA140N10 100 Unit V 140 A - Continuous (TC = 100C) IDM Drain Current - Pulsed 99 A (Note 1) 560 A 25 V 1500 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 140 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 37.5 6.5 375 2.5 -55 to +175 mJ V/ns W W/C C 300 C dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case Typ -- RCS Thermal Resistance, Case-to-Sink RJA Thermal Resistance, Junction-to-Ambient (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C0 Max 0.4 Unit C/W 0.24 -- C/W -- 40 C/W www.fairchildsemi.com FQA140N10 N-Channel MOSFET March 2013 Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 100 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.08 VDS = 80 V, VGS = 0 V -- -- 1 A VDS = 64 V, TC = 150C -- -- 10 A Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.008 0.01 -- 80 -- S IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 70 A gFS Forward Transconductance VDS = 30 V, ID = 70 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 6100 7900 pF -- 2000 2600 pF -- 420 550 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 40 V, ID = 140 A, RG = 25 (Note 4, 5) VDS = 64 V, ID = 140 A, VGS = 10 V (Note 4, 5) -- 75 160 ns -- 940 1890 ns -- 350 710 ns -- 360 730 ns -- 220 285 nC -- 39 -- nC -- 114 -- nC -- -- 140 A -- -- 560 A -- -- 1.5 V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 140 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 140 A, dIF / dt = 100 A/s (Note 6) (Note 4) -- 140 -- ns -- 730 -- nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.115mH, IAS = 140A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 140A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature 6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C0 www.fairchildsemi.com FQA140N10 N-Channel MOSFET Electrical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 2 10 2 10 ID , Drain Current [A] ID, Drain Current [A] Top : 175 1 10 25 0 -55 10 Notes : 1. VDS = 40V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 1 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics IDR , Reverse Drain Current [A] RDS(ON) [m ], Drain-Source On-Resistance 30 25 VGS = 10V 20 VGS = 20V 15 10 5 2 10 1 10 0 10 175 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 -1 0 100 200 300 400 500 700 800 900 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 20000 Coss 16000 Ciss 14000 12000 Notes : 1. VGS = 0 V 2. f = 1 MHz 10000 Crss 8000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 18000 Capacitance [pF] 600 6000 4000 2000 VGS, Gate-Source Voltage [V] 0 10 VDS = 50V VDS = 80V 8 6 4 2 Note : ID = 140 A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C0 0 0 40 80 120 160 200 240 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQA140N10 N-Channel MOSFET Typical Characteristics (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 0.5 Notes : 1. VGS = 10 V 2. ID = 70 A 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 150 Operation in This Area is Limited by R DS(on) 3 10 ID, Drain Current [A] ID, Drain Current [A] 120 10 s 100 s 2 10 10 ms DC 1 ms 1 10 0 Notes : 10 90 Limited by Package 60 30 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area Z JC(t), Thermal Response 75 100 125 150 175 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 -1 N o te s : 1 . Z J C ( t) = 0 .4 /W M a x . 2 . D u ty F a c t o r , D = t 1 / t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 0 .1 0 .0 5 PDM 0 .0 2 10 t1 0 .0 1 -2 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C0 www.fairchildsemi.com FQA140N10 N-Channel MOSFET Typical Characteristics FQA140N10 N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C0 ID (t) VDS (t) VDD tp Time www.fairchildsemi.com FQA140N10 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C0 www.fairchildsemi.com TO-3P 15.60 0.20 18.70 0.20 23.40 0.20 19.90 0.20 1.00 0.20 16.50 0.30 3.00 0.20 +0.15 1.50 -0.05 3.50 0.20 2.00 0.20 4.80 0.20 3.80 0.20 9.60 0.20 13.90 0.20 o3.20 0.10 12.76 0.20 13.60 0.20 1.40 0.20 +0.15 5.45TYP [5.45 0.30] (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C0 5.45TYP [5.45 0.30] 0.60 -0.05 www.fairchildsemi.com FQA140N10 N-Channel MOSFET Package Dimensions *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C0 9 www.fairchildsemi.com FQA140N10 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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