March 2013
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©2000 Fairchild Semiconductor Corporation
FQA140N10 Rev. C0
FQA140N10 N-Channel MOSFET
FQA140N10
N-Channel QFET MOSFET
100 V, 140 A, 10 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• 140 A, 100 V, RDS(on) = 10 mΩ (Max) @VGS = 10 V,
ID = 70 A
• Low Gate Charge (Typ. 220 nC)
• Low Crss (Typ. 470 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQA140N10 Unit
VDSS Drain-Source Voltage 100 V
IDDrain Current - Continuous (TC = 25°C) 140 A
- Continuous (TC = 100°C) 99 A
IDM Drain Current - Pulsed (Note 1) 560 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 1500 mJ
IAR Avalanche Current (Note 1) 140 A
EAR Repetitive Avalanche Energy (Note 1) 37.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns
PDPower Dissipation (TC = 25°C) 375 W
- Derate above 25°C 2.5 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Unit
RθJC Thermal Resistance, Junction-to-Case -- 0.4 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W
S
D
G
TO-3P
FQA Series
GSD
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 6)
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©2000 Fairchild Semiconductor Corporation
FQA140N10 Rev. C0
FQA140N10 N-Channel MOSFET
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.115mH, IAS = 140A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 140A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300μs, Duty cycle ≤2%
5. Essentially independent of operating temperature
6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA100 -- -- V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25°C -- 0.08 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V -- -- 1 μA
VDS = 64 V, TC = 150°C -- -- 10 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA2.0 -- 4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 70 A -- 0.008 0.01 Ω
gFS Forward Transconductance VDS = 30 V, ID = 70 A -- 80 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 6100 7900 pF
Coss Output Capacitance -- 2000 2600 pF
Crss Reverse Transfer Capacitance -- 420 550 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 40 V, ID = 140 A,
RG = 25 Ω
-- 75 160 ns
trTurn-On Rise Time -- 940 1890 ns
td(off) Turn-Off Delay Time -- 350 710 ns
tfTurn-Off Fall Time -- 360 730 ns
QgTotal Gate Charge VDS = 64 V, ID = 140 A,
VGS = 10 V
-- 220 285 nC
Qgs Gate-Source Charge -- 39 -- nC
Qgd Gate-Drain Charge -- 114 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 140 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 560 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 140 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 140 A,
dIF / dt = 100 A/μs
-- 140 -- ns
Qrr Reverse Recovery Charge -- 730 -- nC
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©2000 Fairchild Semiconductor Corporation
FQA140N10 Rev. C0
FQA140N10 N-Channel MOSFET
246810
10-1
100
101
102
※ Notes :
1. VDS = 40V
2. 250μs Pulse Test
-55℃
175℃
25℃
ID , Drain Current [A]
VGS , Gate-Source Voltage [V]
0.20.40.60.81.01.21.41.61.82.0
10-1
100
101
102
25℃
175℃※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
IDR , Reverse Drain Current [A]
VSD , Source-Drain Voltage [V]
0 100 200 300 400 500 600 700 800 900
0
5
10
15
20
25
30
※ Note : T
J = 25℃
VGS = 20V
VGS = 10V
RDS(ON) [mΩ],
Drain-Source On-Resistance
ID , Drain Current [A]
10-1 100101
101
102
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
10-1 100101
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
20000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 40 80 120 160 200 240
0
2
4
6
8
10
12
VDS = 50V
VDS = 80V
※ Note : ID
= 140 A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
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©2000 Fairchild Semiconductor Corporation
FQA140N10 Rev. C0
FQA140N10 N-Channel MOSFET
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. VGS = 0 V
2. ID
= 250 μA
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [o
C]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1 ※ Notes :
1. Z θJC(t) = 0 .4 /W M ax.℃
2. D uty F a ctor, D = t1/t2
3. T JM - T C = PDM * ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, S q uare W ave P ulse D uration [se c]
25 50 75 100 125 150 175
0
30
60
90
120
150
Limited by Package
ID, Drain Current [A]
TC, Case Temperature [ ]℃
100101102
10-1
100
101
102
103
10 μs
DC
10 ms
1 ms
100 μs
Operation in Thi s Area
is Limited by R DS(on)
※ Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Singl e Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t1
PDM
t2
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©2000 Fairchild Semiconductor Corporation
FQA140N10 Rev. C0
FQA140N10 N-Channel MOSFET
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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©2000 Fairchild Semiconductor Corporation
FQA140N10 Rev. C0
FQA140N10 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
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©2000 Fairchild Semiconductor Corporation
FQA140N10 Rev. C0
FQA140N10 N-Channel MOSFET
Package Dimensions
15.60 ±0.20 4.80 ±0.20
13.60 ±0.20
9.60 ±0.20
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20 1.40 ±0.20
ø3.20 ±0.10
3.80 ±0.20
13.90 ±0.20
3.50 ±0.20
16.50 ±0.30
12.76 ±0.20
19.90 ±0.20
23.40 ±0.20
18.70 ±0.20
1.50 +0.15
–0.05
0.60 +0.15
–0.05
5.45TYP
[5.45 ±0.30]5.45TYP
[5.45 ±0.30]
TO-3P
FQA140N10 N-Channel MOSFET
www.fairchildsemi.com
9
©2000 Fairchild Semiconductor Corporation
FQA140N10 Rev. C0
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™
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Rev. I64
®