IRF634B/IRFS634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. * * * * * * 8.1A, 250V, RDS(on) = 0.45 @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G TO-220 G DS GD S IRF Series TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current IRF634B IRFS634B Units V 8.1 8.1 * A 5.1 5.1 * A 32.4 32.4 * A 250 - Continuous (TC = 100C) IDM Drain Current VGSS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 200 mJ IAR Avalanche Current (Note 1) 8.1 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 7.4 5.5 -55 to +150 mJ V/ns W W/C C 300 C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 74 0.59 38 0.3 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case Max. RCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W RJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 C/W (c)2001 Fairchild Semiconductor Corporation IRF634B 1.69 IRFS634B 3.29 Units C/W Rev. A, November 2001 IRF634B/IRFS634B November 2001 Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 250 -- -- V -- 0.27 -- V/C VDS = 250 V, VGS = 0 V -- -- 10 A VDS = 200 V, TC = 125C -- -- 100 A Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.05 A -- 0.345 0.45 gFS Forward Transconductance VDS = 40 V, ID = 4.05 A -- 7.6 -- S -- 780 1000 pF -- 95 125 pF -- 20 25 pF -- 15 40 ns -- 75 160 ns -- 100 210 ns -- 65 140 ns -- 29 38 nC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125 V, ID = 8.1 A, RG = 25 (Note 4, 5) VDS = 200 V, ID = 8.1 A, VGS = 10 V (Note 4, 5) -- 4.2 -- nC -- 14 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8.1 A ISM -- -- 32.4 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 8.1 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 8.1 A, dIF / dt = 100 A/s (Note 4) -- 170 -- ns -- 0.91 -- C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 4.9mH, IAS = 8.1A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.1A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 IRF634B/IRFS634B Electrical Characteristics IRF634B/IRFS634B Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C 0 10 o 25 C o -55 C Notes : 1. VDS = 40V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 -1 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.5 1 10 VGS = 10V IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 2.0 VGS = 20V 1.5 1.0 0.5 0 10 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 -1 0.0 0 6 12 18 24 30 10 0.2 0.4 0.6 0.8 1.2 1.4 1.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 2000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VDS = 50V 10 Ciss Coss 1000 Crss Notes : 1. VGS = 0 V 2. f = 1 MHz 500 VGS, Gate-Source Voltage [V] VDS = 125V 1500 Capacitance [pF] 1.0 ID, Drain Current [A] VDS = 200V 8 6 4 2 Note : ID = 8.1 A 0 0 -1 10 0 10 1 10 0 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 IRF634B/IRFS634B Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 4.05 A 0.5 0.0 -100 200 0 50 100 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 2 10 -50 o o Operation in This Area is Limited by R DS(on) 2 10 Operation in This Area is Limited by R DS(on) 100 s 1 1 10 1 ms 10 ID, Drain Current [A] ID, Drain Current [A] 100 s 1 ms 10 ms DC 0 10 Notes : 10 ms 100 ms DC 0 10 Notes : -1 10 o o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 -2 0 1 10 10 2 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for IRF634B Figure 9-2. Maximum Safe Operating Area for IRFS634B 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [] Figure 10. Maximum Drain Current vs Case Temperature (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 (Continued) 0 D = 0 .5 N o te s : 1 . Z J C (t) = 1 .6 9 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .2 0 .1 10 0 .0 5 -1 PDM 0 .0 2 0 .0 1 JC (t), T h e r m a l R e s p o n s e 10 IRF634B/IRFS634B Typical Characteristics t1 Z s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] D = 0 .5 10 0 0 .2 N o te s : 1 . Z J C (t) = 3 .2 9 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 0 .0 5 10 -1 0 .0 2 JC (t), T h e r m a l R e s p o n s e Figure 11-1. Transient Thermal Response Curve for IRF634B PDM 0 .0 1 Z t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for IRFS634B (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 IRF634B/IRFS634B Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp (c)2001 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A, November 2001 IRF634B/IRFS634B Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 10.08 0.30 (1.00) 13.08 0.20 ) (45 1.27 0.10 +0.10 0.50 -0.05 2.40 0.20 2.54TYP [2.54 0.20] 10.00 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 IRF634B/IRFS634B Package Dimensions (Continued) 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 9.75 0.30 MAX1.47 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 IRF634B/IRFS634B Package Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. H4