Microsemi 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 1N914(A)(B) e Low Current Leakage e Metalurgically Bonded Construction Low Cost Maximum Ratings Operating Temperature: -65C to +175C Storage Temperature: -65C to +175C e Maximum Thermal Resistance; 35C/W Junction To Ambient Electrical Characteristics @ 25C Unless Otherwise Specified 500mW 100 Volt Silicon Epitaxial Diode Reverse Voltage Ve 75V Peak Reverse Vam 100V Voltage Average Rectified lo 150mA | Resistive Load Current f > 50Hz Power Dissipation Prot 500mW Junction Ty 200C Temperature Peak Forward Surge legm 500mA | 8.3ms, half sine Current Maximum Instantaneous Ve 1.0V lem = 10mA; Forward Voltage Ty = 25C* Maximum DC VrR=20Volts Reverse Current At ln 25nA T, = 25C Rated DC Blocking 50uA Ty = 150C Voltage Typical Junction Cy 4pF Measured at Capacitance 1.0MHz, Ve=4.0V Reverse Recovery Tyr 4nS tp=10mA Time Va = 6V R.=1000 *Pulse test: Pulse width 300 usec, Duty cycle 2% DO-35 poe a ~ te Cathode Mark aj I i po 5-431N9 Fi T 20 10 6 4 2 MilliAmps 1 6 4 06 .02 .01 igure 1 ypical Forward Characteristics Figure 2 Forward Derating Curve 600 500 400 300 MilliWatts 200 100 oo. CBO~*~S~S~OSCS~SO OS C Admissabie Power Dissipation - MilliWatts versus Ambient Temperature - C 4 G 8 1.0 1.2 1.4 Volts Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts Figure Junction Capacitance 10 6 pF ae A a A 1 2 4 10 20 40 100 200 400 1000 Junction Capacitance - pF versus Reverse Voltage - Volts 5-441N914 Figure 4 Typical Reverse Characteristics 1000 600 400 200 100 60 40 20 10 NanoAmp 6 4 Ta=25C Ta=100C dj 120 140 20 40 60 80 100 Ty Instantaneous Reverse Leakage Current - NanaAmperes versus Junction Temperature - C MilliAmps Figure 5 Paak Forward Surge Current 600 500 400 300 200 100 1 2 4 6 810 20 40 60 100 Cycles Peak Forward Surge Current - Amperes versus Number Of Cycles At 60Hz - Cycles 5-45