VS-25TTS..PbF Series, VS-25TTS..-M3 Series www.vishay.com Vishay Semiconductors High Voltage Phase Control Thyristor, 25 A FEATURES 2 (A) * Designed and JEDEC-JESD47 qualified according to * 125 C max. operating junction temperature * Compliant to RoHS Directive 2002/95/EC TO-220AB * Halogen-free according definition (-M3 only) 1 (K) (G) 3 to IEC 61249-2-21 APPLICATIONS PRODUCT SUMMARY Package TO-220AB Diode variation Single SCR IT(AV) 16 A VDRM/VRRM 800 V, 1200 V VTM 1.25 V IGT 45 mA TJ - 40 C to 125 C * Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding, and battery charge. DESCRIPTION The VS-25TTS... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 18 22 A Capacitive input filter TA = 55 C, TJ = 125 C, common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform IRMS 16 25 VRRM/VDRM ITSM VT VALUES 16 A, TJ = 25 C dV/dt dI/dt UNITS A 800/1200 V 300 A 1.25 V 500 V/s 150 A/s - 40 to 125 C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 C mA VS-25TTS08PbF, VS-25TTS08-M3 800 800 VS-25TTS12PbF, VS-25TTS12-M3 1200 1200 TJ VOLTAGE RATINGS PART NUMBER Revision: 10-Nov-11 10 Document Number: 94385 1 For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS..PbF Series, VS-25TTS..-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM TEST CONDITIONS VALUES MAX. TYP. TC = 93 C, 180 conduction half sine wave 16 10 ms sine pulse, rated VRRM applied 300 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated VRRM applied 450 10 ms sine pulse, no voltage reapplied 630 UNITS 25 A Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 6300 A2s Maximum on-state voltage drop VTM 16 A, TJ = 25 C 1.25 V 12.0 m 1.0 V On-state slope resistance Threshold voltage Maximum reverse and direct leakage current rt VT(TO) IRM/IDM TJ = 125 C TJ = 25 C TJ = 125 C 0.5 VR = Rated VRRM/VDRM Holding current IH Anode supply = 6 V, resistive load, initial IT = 1 A Maximum latching current IL Anode supply = 6 V, resistive load A2s 10 100 - mA 200 Maximum rate of rise of off-state voltage dV/dt 500 V/s Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER TEST CONDITIONS SYMBOL VALUES UNITS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum peak gate power Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 10 C 60 Anode supply = 6 V, resistive load, TJ = 25 C 45 Anode supply = 6 V, resistive load, TJ = 125 C 20 Anode supply = 6 V, resistive load, TJ = - 10 C 2.5 Anode supply = 6 V, resistive load, TJ = 25 C 2.0 Anode supply = 6 V, resistive load, TJ = 125 C 1.0 TJ = 125 C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq Revision: 10-Nov-11 TEST CONDITIONS TJ = 25 C TJ = 125 C 0.9 4 s 110 Document Number: 94385 2 For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS..PbF Series, VS-25TTS..-M3 Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS C 1.1 Mounting surface, smooth and greased C/W 0.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf * cm (lbf * in) 25TTS08 Case style TO-220AB 130 25TTS12 25 25TTS.. Series RthJC (DC) = 1.1 C/W Maximum Average On-State Power Loss (W) Maximum Allowable Case Temperature (C) - 40 to 125 62 Marking device 120 O 110 Conduction angle 100 180 90 60 30 180 120 90 60 30 20 15 RMS limit 10 O Conduction angle 5 25TTS.. Series TJ = 125 C 120 0 90 0 5 15 10 0 20 4 8 12 16 20 Average On-State Current (A) Average On-State Current (A) Fig. 1 - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics 35 130 25TTS.. Series RthJC (DC) = 1.1 C/W Maximum Average On-State Power Loss (W) Maximum Allowable Case Temperature (C) UNITS DC operation Approximate weight Mounting torque VALUES 120 O 110 Conduction period 100 30 90 60 120 DC 180 90 80 DC 180 120 90 60 30 30 25 20 RMS limit 15 O 10 Conduction period 5 25TTS.. Series TJ = 125 C 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 Average On-State Current (A) Average On-State Current (A) Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Revision: 10-Nov-11 Document Number: 94385 3 For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS..PbF Series, VS-25TTS..-M3 Series www.vishay.com Vishay Semiconductors 400 350 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. 350 Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 300 Peak Half Sine Wave On-State Current (A) Peak Half Sine Wave On-State Current (A) At any rated load condition and with rated VRRM applied following surge 250 200 Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 300 250 200 150 25TTS.. Series 25TTS.. Series 150 1 10 100 0.01 100 0.1 Number of Equal Amplitude Half Cycle Current Pulses (N) 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current 1000 100 TJ = 25 C TJ = 125 C 10 25TTS.. Series 1 0 1 2 3 4 5 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 10 V, 20 tr = 0.5 s, tp 6 s b) Recommended load line for 30 % rated dI/dt: 10 V, 65 tr = 1 s, tp 6 s VGD IGD 0.1 0.001 (a) (b) TJ = 10 C 1 (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms TJ = 25 C TJ = 125 C Instantaneous Gate Voltage (V) 100 (4) 0.1 (2) (1) Frequency limited by PG(AV) 25TTS.. Series 0.01 (3) 1 10 100 Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics Revision: 10-Nov-11 Document Number: 94385 4 For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS..PbF Series, VS-25TTS..-M3 Series www.vishay.com Vishay Semiconductors ZthJC - Transient Thermal Impedance (C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single pulse 0.01 0.0001 0.001 25TTS.. Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 25 T T S 12 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (25 = 25 A) 3 - Circuit configuration: 4 - T = Single thyristor Package: T = TO-220AB 5 - Type of silicon: S = Standard recovery rectifier 6 - Voltage rating 7 - Environmental digit: 08 = 800 V 12 = 1200 V PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-25TTS08PbF 50 1000 Antistatic plastic tubes VS-25TTS08-M3 50 1000 Antistatic plastic tubes VS-25TTS12PbF 50 1000 Antistatic plastic tubes VS-25TTS12-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 10-Nov-11 www.vishay.com/doc?95222 TO-220AB PbF www.vishay.com/doc?95225 TO-220AB -M3 www.vishay.com/doc?95028 Document Number: 94385 5 For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 OP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 OP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90 to 93 INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90 to 93 NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000