HZM-N Series
Silicon Epitaxial Planar Zener Diode for Stabilizer
ADE-208-130C (Z)
Rev. 3
Jan. 1999
Features
• Wide spectrum from 1.9V through 38V of zener voltage provide flexible application.
• MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HZM-N Series Let to Mark Code MPAK
Outline
1 NC
2 Anode
3 Cathode
(Top View)
21
3
HZM-N Series
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Power dissipation Pd *1200 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. See Fig. 3.
Electrical Characteristics (Ta = 25°C)
Zener Voltage *1Reverse Current Dynamic Resistance
VZ (V) Test
Condition IR (µA) Test
Condition rd (Ω)Test
Condition
Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZM2.0N B 1.90 2.20 5 120 0.5 100 5
HZM2.2N B 2.10 2.40 5 120 0.7 100 5
HZM2.4N B 2.30 2.60 5 120 1.0 100 5
HZM2.7N B 2.50 2.90 5 120 1.0 110 5
B1 2.50 2.75
B2 2.65 2.90
HZM3.0N B 2.80 3.20 5 50 1.0 120 5
B1 2.80 3.05
B2 2.95 3.20
HZM3.3N B 3.10 3.50 5 20 1.0 130 5
B1 3.10 3.35
B2 3.25 3.50
HZM3.6N B 3.40 3.80 5 10 1.0 130 5
B1 3.40 3.65
B2 3.55 3.80
HZM3.9N B 3.70 4.10 5 10 1.0 130 5
B1 3.70 3.97
B2 3.87 4.10
HZM4.3N B 4.01 4.48 5 10 1.0 130 5
B1 4.01 4.21
B2 4.15 4.34
B3 4.28 4.48
Note: 1. Tested with pulse (PW = 40ms)
HZM-N Series
3
Zener Voltage *1Reverse Current Dynamic Resistance
VZ (V) Test
Condition IR (µA) Test
Condition rd (Ω)Test
Condition
Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZM4.7N B 4.42 4.90 5 10 1.0 130 5
B1 4.42 4.61
B2 4.55 4.75
B3 4.69 4.90
HZM5.1N B 4.84 5.37 5 5 1.5 130 5
B1 4.84 5.04
B2 4.98 5.20
B3 5.14 5.37
HZM5.6N B 5.31 5.92 5 5 2.5 80 5
B1 5.31 5.55
B2 5.49 5.73
B3 5.67 5.92
HZM6.2N B 5.86 6.53 5 2 3.0 50 5
B1 5.86 6.12
B2 6.06 6.33
B3 6.26 6.53
HZM6.8N B 6.47 7.14 5 2 3.5 30 5
B1 6.47 6.73
B2 6.65 6.93
B3 6.86 7.14
HZM7.5N B 7.06 7.84 5 2 4.0 30 5
B1 7.06 7.36
B2 7.28 7.60
B3 7.52 7.84
HZM8.2N B 7.76 8.64 5 2 5.0 30 5
B1 7.76 8.10
B2 8.02 8.36
B3 8.28 8.64
HZM9.1N B 8.56 9.55 5 2 6.0 30 5
B1 8.56 8.93
B2 8.85 9.23
B3 9.15 9.55
Note: 1. Tested with pulse (PW = 40ms)
HZM-N Series
4
Zener Voltage *1Reverse Current Dynamic Resistance
VZ (V) Test
Condition IR (µA) Test
Condition rd (Ω)Test
Condition
Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZM10N B 9.45 10.55 5 2 7.0 30 5
B1 9.45 9.87
B2 9.77 10.21
B3 10.11 10.55
HZM11N B 10.44 11.56 5 2 8.0 30 5
B1 10.44 10.88
B2 10.76 11.22
B3 11.10 11.56
HZM12N B 11.42 12.60 5 2 9.0 35 5
B1 11.42 11.90
B2 11.74 12.24
B3 12.08 12.60
HZM13N B 12.47 13.96 5 2 10.0 35 5
B1 12.47 13.03
B2 12.91 13.49
B3 13.37 13.96
HZM15N B 13.84 15.52 5 2 11.0 40 5
B1 13.84 14.46
B2 14.34 14.98
B3 14.85 15.52
HZM16N B 15.37 17.09 5 2 12.0 40 5
B1 15.37 16.01
B2 15.85 16.51
B3 16.35 17.09
HZM18N B 16.94 19.03 5 2 13.0 45 5
B1 16.94 17.70
B2 17.56 18.35
B3 18.21 19.03
HZM20N B 18.86 21.08 5 2 15.0 50 5
B1 18.86 19.70
B2 19.52 20.39
B3 20.21 21.08
Note: 1. Tested with pulse (PW = 40ms)
HZM-N Series
5
Zener Voltage *1Reverse Current Dynamic Resistance
VZ (V) Test
Condition IR (µA) Test
Condition rd (Ω)Test
Condition
Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZM22N B 20.88 23.17 5 2 17.0 55 5
B1 20.88 21.77
B2 21.54 22.47
B3 22.23 23.17
HZM24N B 22.93 25.57 5 2 19.0 60 5
B1 22.93 23.96
B2 23.72 24.78
B3 24.54 25.57
HZM27N B 25.10 28.90 2 2 21.0 70 2
HZM30N B 28.00 32.00 2 2 23.0 80 2
HZM33N B 31.00 35.00 2 2 25.0 80 2
HZM36N B 34.00 38.00 2 2 27.0 90 2
Note: 1. Tested with pulse (PW = 40ms)
HZM-N Series
6
Mark Code
Type Grade MARK No. Type Grade MARK No. Type Grade MARK No.
HZM2.0N B 2 0 – HZM7.5N B1 7 5 1 HZM20N B1 2 0 1
HZM2.2N B 2 2 – B2 7 5 2 B2 2 0 2
HZM2.4N B 2 4 – B3 7 5 3 B3 2 0 3
HZM2.7N B1 2 7 1 HZM8.2N B1 8 2 1 HZM22N B1 2 2 1
B2 2 7 2 B2 8 2 2 B2 2 2 2
HZM3.0N B1 3 0 1 B3 8 2 3 B3 2 2 3
B2 3 0 2 HZM9.1N B1 9 1 1 HZM24N B1 2 4 1
HZM3.3N B1 3 3 1 B2 9 1 2 B2 2 4 2
B2 3 3 2 B3 9 1 3 B3 2 4 3
HZM3.6N B1 3 6 1 HZM10N B1 1 0 1 HZM27N B 2 7 –
B2 3 6 2 B2 1 0 2 HZM30N B 3 0 –
HZM3.9N B1 3 9 1 B3 1 0 3 HZM33N B 3 3 –
B2 3 9 2 HZM11N B1 1 1 1 HZM36N B 3 6 –
HZM4.3N B1 4 3 1 B2 1 1 2
B2 4 3 2 B3 1 1 3
B3 4 3 3 HZM12N B1 1 2 1
HZM4.7N B1 4 7 1 B2 1 2 2
B2 4 7 2 B3 1 2 3
B3 4 7 3 HZM13N B1 1 3 1
HZM5.1N B1 5 1 1 B2 1 3 2
B2 5 1 2 B3 1 3 3
B3 5 1 3 HZM15N B1 1 5 1
HZM5.6N B1 5 6 1 B2 1 5 2
B2 5 6 2 B3 1 5 3
B3 5 6 3 HZM16N B1 1 6 1
HZM6.2N B1 6 2 1 B2 1 6 2
B2 6 2 2 B3 1 6 3
B3 6 2 3 HZM18N B1 1 8 1
HZM6.8N B1 6 8 1 B2 1 8 2
B2 6 8 2 B3 1 8 3
B3 6 8 3
HZM-N Series
7
Example of Marking
2. Two grade type (B1, B2)
HZM3.0NB2
302301
HZM3.0NB1
3. Three grade type (B1, B2, B3)
HZM4.3NB2
432431
HZM4.3NB1 HZM4.3NB3
433
Notes:1.
2.
3.
The grade B type includes from B1 min. to B3 (or B2) max.
B grade is standard and has better delivery, These are marked one of B1, B2, B3.
Ordering P/N HZM-N series are delivered taped (TL/TR).
Choose one taping code and adhere to parts No.
Example: HZM2.0NBTL (or TR), HZM2.2NBTL (or TR), HZM36NBTL (or TR).
(Grade B type)
HZM2.7NB1TL (or TR), HZM2.7NB2TL (or TR) •• HZM24NB3TL (or TR).
(Grade B1, B2, B3 type)
1. One grade type (grade type B)
HZM30NB
30 -
-
Underline
20 -
HZM2.0NB
HZM-N Series
8
Main Characteristic
Fig.1 Zener current Vs. Zener voltage
Fig.3 Power Dissipation Vs. Ambient Temperature
10
8
6
4
2
04812 16 20
Zener Current I (mA)
Z
Zener Voltage V (V)
Z
24 28 32 4036
HZM6.8N
HZM12N
HZM15N
HZM18N
HZM2.0N
HZM20N
HZM22N
HZM33N
HZM36N
HZM30N
HZM2.4N
HZM3.0N
HZM3.6N
HZM4.3N
HZM5.1N
HZM6.2N
HZM7.5N
HZM8.2N
HZM9.1N
HZM10N
HZM11N
HZM13N
HZM16N
HZM24N
HZM27N
05
10 15 20 25
Zener Voltage
Temperature Coefficient (%/°C)
γ
–0.06
Zener Voltage
Temperature Coefficient (mV/°C)
z
γ
30 35 40 45
–0.05
–0.04
–0.03
–0.02
–0.01
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
–25
–20
–15
–10
–5
0
5
10
15
20
25
30
35
40
Z
Zener Voltage V (V)
%/°C
mV/°C
z
250
200
150
100
50
200
150100
50
0
Ambient Temperature Ta ( °C)
Power Dissipation P (mW)
d
0
Printed circuit board
25 62 1.6t mm
Material:
Glass Epoxy Resin + Cu Foil
××
Cu Foil
1.0mm
0.8mm
Fig.2 Temperature Coefficient Vs. Zener voltage
HZM-N Series
9
Package Dimensions
Unit : mm
0.16
0 – 0.10
+ 0.10
– 0.06
0.4 + 0.10
– 0.05
0.95 0.95
1.9
2.8 + 0.3
– 0.1
2.8 + 0.2
– 0.6
0.65+ 0.1
– 0.3
1.5
0.65+ 0.1
– 0.3
1.1+ 0.2
– 0.1
0.3
Laser Mark
21
3
HITACHI Code
JEDEC Code
EIAJ Code
Weight (g)
MPAK(1)
—
SC-59A
0.011
1
2
3
NC
Anode
Cathode
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
