RGF1A THRU RGF1M
SURFACE MOUNT GLASS PASSIVATED JUNCTION
FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ Ideal for surface mount automotive applications
♦ High temperature metallurgically bonded construction
♦ Glass passivated cavity-free junction
♦ Capable of meeting environmental standards of
MIL-S-19500
♦ Built-in strain relief
♦ Easy pick and place
♦ Fast switching for high efficiency
♦ High temperature soldering guaranteed:
450°C/5 seconds at terminals
♦ Complete device submersible temperature of
265°C for 10 seconds in solder bath
MECHANICAL DATA
Case: JEDEC DO-214BA molded plastic over glass body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.0048 ounce, 0.120 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNITS
Device Mar king Code RA RB RD RG RJ RK RM
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum average forward rectified current
at TL=120°C I(AV) 1.0 Amp
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load (JEDEC method) IFSM 30.0 Amps
Maximum instantaneous forward voltage at 1.0A VF1.30 Volts
Maximum full load reverse current,
full cycle average, TA=55°C IR(AV) 50.0 µA
Maximum DC reverse current TA=25°C 5.0
at rated DC blocking voltage TA=125°C IR100 µA
Maximum reverse recover y time (NOTE 1) trr 150 250 500 ns
Typical junction capacitance (NOTE 2) CJ8.5 pF
Typical ther mal resistance (NOTE 3) RΘJA 85.0 °C/W
RΘJL 28.0
Operating junction and storage temperature range TJ, TSTG -65 to +175 °C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied Vr=4.0 Volts
(3) Ther mal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
4/98
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.0105 (0.27)
0.030 (0.76)
0.060 (1.52) 0.006
0.152 TYP.
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.106 (2.69)
0.118 (3.00)
0.040 (1.02)
0.060 (1.52)
0.098 (2.49)
0.108 (2.74)
DO-214BA
MODIFIED J-BEND
®
PATENTED*
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead
forming by Patent No.5,151,846
110100
0
5
10
15
20
25
30
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
10
0.5
100 110 120 130 140 150 160 175
0
1
110100
1
10
100
020406080100
0.01
0.1
1
10
0.01 0.1 1 10 100
0.1
1
10
100
RATINGS AND CHARACTERISTIC CURVES RGF1A THRU RGF1M
FIG. 1 - FORWARD CURRENT DERATING CURVE
LEAD TEMPERATURE, °C
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD VOLTA GE, VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
JUNCTION, CAPACITANCE, pF
TRANSIENT THERMAL IMPEDANCE (°C/W)
REVERSE V OLTAGE, V OLTS
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
MOUNTED ON 0.2 x 0.2” (5 x 7mm)
COPPER PAD AREAS
TJ=25°C
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
TJ=100°C
TJ=125°C
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
t, PULSE DURATION, sec
60 HZ
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED on
0.2 x 0.2” (5.0 x 5.0mm)
COPPER PAD AREAS
