March 2013.Version 3.0 MagnaChip Semiconductor Ltd.
1
MPMB50B120RH NPT & Rugged Type 1200V IGBT Module
Absolute Maximum Ratings @Tc = 25oC (Per Leg)
Characteristics
Symbol
Rating
Unit
Collector-Emitter Voltage
1200
V
Gate- Voltage
±20
V
Continuous Collector Current
TC=25oC
IC
75
A
TC=80oC
50
A
Pulsed Collector Current(1)
100
A
Diode Continuous Forward Current
TC=80oC
IF
50
A
Diode Maximum Forward Current
IFM
100
A
Power Dissipation
TC=25oC
PD
416
W
Short Circuit Withstand Time
TSC
10
us
Operating Junction Temperature
Tj
-55~150
oC
Storage Temperature Range
Tstg
-55~125
oC
Isolation Voltage
AC 1minute
Viso
2500
V
Mounting screw Torque : M6
-
4
N.m
Note : (1) Repetitive rating : Pulse width limited by max. junction temperature
MPMB50B120RH
NPT & Rugged Type 1200V IGBT Module
General Description
MagnaChip’s IGBT Module 7DM-1 package
devices are optimized to reduce losses and
switching noise in high frequency power
conditioning electrical systems. These IGBT
Module series are ideally suited for IH, High
Power inverters, Motors drives and other
applications where switching losses are
significant portion of the total losses.
Features
BVCES= 1200V
Low Conduction Loss : VCE(sat) = 2.8V (typ.)
Fast & Soft Anti-Parallel FWD
Short circuit rated : Min. 10us at TC=100℃
Isolation Type Package
Applications
Induction Heating, Motor Drives, High Power Inverters
Welding Machine, UPS
7DM-1
Equivalent Circuit
E301932
March 2013.Version 3.0 MagnaChip Semiconductor Ltd.
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MPMB50B120RH NPT & Rugged Type 1200V IGBT Module
Electrical Characteristics of IGBT @TC =25oC(unless otherwise specified)
Characteristics
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
Collector-Emitter Breakdown Voltage
BVCES
IC = 1mA, VGE = 0V
1200
-
-
V
Gate Threshold Voltage
VGE(th)
VCE = VGE, IC = 2mA
4.5
-
6.5
Collector Cut-Off Current
ICES
VCE = 1200V, VGE = 0V
-
-
1
mA
Gate Leakage Current
IGES
VGE = ±20V, VCE = 0V
-
-
±250
nA
Collector-Emitter saturation voltage
VCE(sat)
VGE = 15V,
IC=50A
TC=25℃
-
2.8
3.2
V
TC=100℃
-
3.4
-
V
Dynamic Characteristics
Total Gate Charge
Qg
VCC = 600V, IC = 50A,
VGE = ±15V
-
220
-
nC
Gate-Emitter Charge
Qge
-
25
-
Gate-Collector Charge
Qgc
-
130
-
Input Capacitance
Cies
VCE = 30V, VGE = 0V,
f = 1.0MHz
-
3400
-
pF
Output Capacitance
Coes
-
370
-
Reverse Transfer Capacitance
Cres
-
125
--
Turn-On Delay Time
td(on)
VCC = 600V, IC = 50A,
VGE =±15V,
RG = 15Ω, Inductive Load
-
135
-
ns
Rise Time
tr
-
60
-
Turn-Off Delay Time
td(off)
-
450
-
Fall Time
tf
-
70
-
Turn on Switching Loss
Eon
-
3.8
-
mJ
Turn off Switching Loss
Eoff
-
3.0
-
mJ
Total Switching Loss
Ets
-
6.8
-
mJ
Short Circuit Withstand Time
Tsc
Vcc = 600V, VGE = ±15V
RG =15 Ω @ Tc = 100℃
10
-
-
us
Electrical Characteristics of FRD @Ta =25oC(unless otherwise specified)
Diode Forward Voltage
VFM
IF=50A
TC=25℃
-
2.9
3.5
V
TC=100℃
-
2.3
-
Diode Reverse Recovery Time
trr
IF =50A,VR=600V
di/dt = -100A/uS
TC=25℃
-
70
-
ns
TC=100℃
150
Diode Peak Reverse
Recovery Current
Irr
TC=25℃
-
3
-
A
TC=100℃
-
10
-
Diode Reverse
Recovery Charge
Qrr
TC=25℃
-
105
-
nC
TC=100℃
-
750
-
March 2013.Version 3.0 MagnaChip Semiconductor Ltd.
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MPMB50B120RH NPT & Rugged Type 1200V IGBT Module
Thermal Characteristics and Weight
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Junction-to-Case(IGBT Part)
RθJC
-
-
0.3
℃/W
Junction-to-Case(DIODE Part)
RθJC
-
-
0.6
℃/W
Case-to-Sink ( Conductive grease applied)
RθCS
0.05
-
-
℃/W
Weight of Module
Weight
-
-
200
g
March 2013.Version 3.0 MagnaChip Semiconductor Ltd.
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MPMB50B120RH NPT & Rugged Type 1200V IGBT Module
Fig.6 Typical turn-off energy = f(RG)
VGE = ±15V, IC = 50A, VCE = 600V
Fig.5 Typical turn-on energy = f(RG)
VGE = ±15V, IC = 50A, VCE = 600V
Fig.1 Typical Output Characteristics
Fig.2 Typical Output Characteristics
Fig.4 Gate Charge Characteristics
Fig.3 Typical Saturation Voltage Characteristics
0 1 2 3 4 5 6
0
50
100
150
Collector Current,IC[A]
TC=25℃
TC=125℃
Collector-Emitter Voltage,VCE[V]
0 1 2 3 4 5 6
0
50
100
150
8V
10V
12V
15V
20V
Common Emitter
Tc=25℃
Collector Current,IC[A]
Collector - Emitter Voltage,VCE[V]
0 1 2 3 4 5 6
0
50
100
150
8V
10V
12V
15V
20V
Common Emitter
TC=125℃
Collector Current,IC[A]
Collector - Emitter Voltage,VCE[V]
0 5 10 15 20 25
1
2
3
4
5
6 Eon(TC=25℃)
Eon(TC=125℃)
Eon[mJ]
RG[Ω ]
0 5 10 15 20 25
1.0
1.5
2.0
2.5
3.0
3.5
4.0 Eoff(TC=25℃)
Eoff(TC=125℃)
Eoff[mJ]
RG[Ω ]
0100 200 300
0
2
4
6
8
10
12
14 VCE=600V,IC=50A
TC=25℃
Gate-Emitter Voltage, VGE[V]
Gate Charge, Qg[nC]
March 2013.Version 3.0 MagnaChip Semiconductor Ltd.
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MPMB50B120RH NPT & Rugged Type 1200V IGBT Module
Fig.7 Rated Current vs. Case Temperature
Fig.8 Power Dissipation
vs. Case Temperature
Fig.9 Transient Thermal Impedance
Fig.10 Forward Characteristics
0 1 2 3 4 5
0
50
100
150
TC=25℃
TC=125℃
Forward Current, IF[A]
Forward Drop Voltage, VF[V]
020 40 60 80 100 120 140 160
0
100
200
300
400 TJ≤ 150℃
PD=f(TC)
Power Dissipation[W]
TC[℃]
020 40 60 80 100 120 140 160
0
20
40
60
80
100
120 TJ = 150℃
VGE ≥ 15V
Collector Current,IC[A]
Case Temperatute, Tc[℃]
1E-5 1E-4 1E-3 0.01 0.1 1 10
1E-3
0.01
0.1
1
TC=25℃
FRD
IGBT
Thermal Response Zthjc[℃/W]
Rectangular Pulse Duration Time[sec]
March 2013.Version 3.0 MagnaChip Semiconductor Ltd.
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MPMB50B120RH NPT & Rugged Type 1200V IGBT Module
Package Dimension
7DM-1
Dimensions are in millimeters, unless otherwise specified
March 2013.Version 3.0 MagnaChip Semiconductor Ltd.
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MPMB50B120RH NPT & Rugged Type 1200V IGBT Module
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.