© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 1 1Publication Order Number:
NVTFS4C08N/D
NVTFS4C08N
Power MOSFET
30 V, 5.9 mW, 55 A, Single N−Channel,
m8FL
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•NVTFS4C08NWF − Wettable Flanks Product
•NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJA
(Notes 1, 2, 4)
Steady
State
TA = 25°CID17 A
TA = 100°C 12
Power Dissipation RqJA
(Note 1, 2, 4) TA = 25°CPD3.1 W
TA = 100°C 1.6
Continuous Drain
Current RqJC (Note 1,
3, 4)
TA = 25°CID55
TA = 100°C 39 A
Power Dissipation
RqJC (Note 1, 3, 4) TA = 25°CPD31 W
TA = 100°C 15
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 253 A
Operating Junction and Storage Temperature TJ,
Tstg −55 to
+175 °C
Source Current (Body Diode) IS28 A
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, IL = 20 Apk, L = 0.1 mH) EAS 20 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State (Drain)
(Notes 1 and 4) RqJC 4.9
°C/W
Junction−to−Ambient – Steady State
(Notes 1 and 2) RqJA 48
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm2 2 oz. Cu pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
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V(BR)DSS RDS(on) MAX ID MAX
30 V 5.9 mW @ 10 V 55 A
N−Channel MOSFET
D (5−8)
S (1,2,3)
G (4)
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
9.0 mW @ 4.5 V
(Note: Microdot may be in either location)
11
XXXX
AYWWG
G
D
D
D
D
S
S
S
G
See detailed ordering and shipping information on page 5 o
f
this data sheet.
ORDERING INFORMATION
4C08 = Specific Device Code for
NVMTS4C08N
08WF = Specific Device Code of
NVTFS4C08NWF
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
NVTFS4C08N
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ13.8 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V TJ = 25°C 1.0 mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.3 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ5.0 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 4.7 5.9 mW
VGS = 4.5 V ID = 18 A 7.2 9.0
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 42 S
Gate Resistance RGTA = 25°C 1.0 W
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
1113
pF
Output Capacitance COSS 702
Reverse Transfer Capacitance CRSS 39
Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.035
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
8.4
nC
Threshold Gate Charge QG(TH) 1.8
Gate−to−Source Charge QGS 3.5
Gate−to−Drain Charge QGD 3.3
Gate Plateau Voltage VGP 3.4 V
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 18.2 nC
SWITCHING CHARACTERISTICS (Note 6)
T urn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
9.0
ns
Rise Time tr33
T urn−Off Delay Time td(OFF) 15
Fall Time tf4.0
T urn−On Delay Time td(ON)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
7.0
ns
Rise Time tr26
T urn−Off Delay Time td(OFF) 19
Fall Time tf3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 A TJ = 25°C 0.79 1.1 V
TJ = 125°C 0.66
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
28.3
ns
Charge Time ta14.5
Discharge Time tb13.8
Reverse Recovery Charge QRR 15.3 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NVTFS4C08N
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3
TYPICAL CHARACTERISTICS
10
100
1000
10000
5 1015202530
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.010
10 20 30 40 50 60 70
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
0
10
20
30
40
50
60
70
80
00.511.522.533.544.55
0 0.5 1 1.5 2 2.5 3
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 5. On−Resistance Variation with
Temperature Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
IDSS, LEAKAGE (nA)
3.8 V
3.2 V
3.0 V
2.8 V
TJ = 25°C
VDS = 3 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
ID = 30 A
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
ID = 30 A
VGS = 10 V VGS = 0 V
TJ = 85°C
TJ = 150°C
TJ = 125°C
3.6 V
3.4 V
4 V
4.2 V
4.5 V
5.5 V −
10 V
0
10
20
30
40
50
60
70
80
90
100
0.60
0.80
1.00
1.20
1.40
1.60
1.80
−50 −25 0 25 50 75 100 125 150 175
NVTFS4C08N
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4
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.1 1 10 100
0
2
4
6
8
10
12
14
16
18
20
0.4 0.5 0.6 0.7 0.8 0.9
1.0
1
10
100
1000
1 10 100
0
2
4
6
8
10
024681012141618
20
0
200
400
600
800
1000
1200
1400
1600
1800
0 5 10 15 20 25 30
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
VDD = 15 V
ID = 15 A
VGS = 10 V
td(off)
td(on)
tr
tfTJ = 25°C
TJ = 125°C
VGS = 0 V
100 ms
10 ms
1 ms
dc
10 ms
Qgs
QT
Qgd TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
VGS = 10 V
TC = 25°C
650 mm2 2 oz Cu Pad
RDS(on) Limit
Thermal Limit
Package Limit
NVTFS4C08N
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5
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 12. Thermal Response
PULSE TIME (sec)
RqJA(t) (°C/W)
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
Figure 13. GFS vs. ID
ID (A)
GFS (S)
Figure 14. Avalanche Characteristics
TAV, TIME IN AVALANCHE (s)
IPEAK, DRAIN CURRENT (A)
1
10
100
1.E−031.0E−06 1.0E−05 1.0E−04
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
TJ(initial) = 25°C
TJ(initial) = 125°C
ORDERING INFORMATION
Device Package Shipping†
NVTFS4C08NTAG WDFN8
(Pb−Free) 1500 / Tape & Reel
NVTFS4C08NWFTAG WDFN8
(Pb−Free) 1500 / Tape & Reel
NVTFS4C08NTWG WDFN8
(Pb−Free) 5000 / Tape & Reel
NVTFS4C08NWFTWG WDFN8
(Pb−Free) 5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVTFS4C08N
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6
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
M1.40 1.50
q0 −−−
_
1.60
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994
.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
B
A
0.20 C
0.20 C
2X
2X
DIM MIN NOM
MILLIMETERS
A0.70 0.75
A1 0.00 −−−
b0.23 0.30
c0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
e0.65 BSC
G0.30 0.41
K0.65 0.80
L0.30 0.43
L1 0.06 0.13
A
0.10 C
0.10 C
DETAIL A
14
8L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
M
*For additional information on our Pb−Free strategy and solderin
g
details, please download the ON Semiconductor Soldering an
d
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75 2.30
3.46
PACKAGE
8X
0.055 0.059
0 −−−
_
0.063
12
_
0.028 0.030
0.000 −−−
0.009 0.012
0.006 0.008
0.116 0.120
0.078 0.083
0.116 0.120
0.058 0.063
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
MIN NOM
INCHES MAX
78
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40 0.009 0.012 0.016
E3
4X
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
NVTFS4C08N/D
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