BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 A to 50 mA. Sourced from Process 07. Absolute Maximum Ratings* Symbol 3 TA = 25C unless otherwise noted Parameter Value Units V V V V V VCEO Collector-Emitter Voltage VCES Collector-Base Voltage VEBO Emitter-Base Voltage 65 45 80 50 6.0 IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C BC846 series BC847 series BC846 series BC847 series *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation Max Units *BC846 / BC847 325 2.8 357 mW mW/C C/W (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO IC = 10 mA, IB = 0 V(BR)CES Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage ICBO Collector-Cutoff Current IE = 10 A, IC = 0 VCB = 30 V VCB = 30 V, TA = 150C IC = 10 A, IE = 0 846A / B 847A / B 846A / B 847A / B 65 45 80 50 6.0 V V V 15 5.0 nA A 220 450 800 0.25 0.6 0.70 0.77 V V V V ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage IC = 2.0 mA, VCE = 5.0 V 846A / 847A 846B / 847B 847C IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V 110 200 420 0.58 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance NF Noise Figure IC = 10 mA, VCE = 5.0, f = 100 MHz VCB = 10 V, f = 1.0 MHz 100 IC = 0.2 mA, VCE = 5.0, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz MHz 4.5 pF 10 dB Typical Pulsed Current Gain vs Collector Current 1200 1000 V CE = 5.0 V 125 C 800 600 25 C 400 - 40 C 200 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 VCESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 = 10 0.2 125 C 0.15 0.1 0.05 0.1 25 C - 40 C 1 10 I C - COLLECTOR CURRENT (mA) 100 BC846A / BC846B / BC847A / BC847B / BC847C NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current 1 - 40 C 0.8 25 C 0.6 125 C 0.4 = 10 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 VBEON- BASE-EMITTER ON VOLTAGE (V) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) Typical Characteristics Base-Emitter ON Voltage vs Collector Current 1 - 40 C 0.8 25 C 0.6 125 C 0.4 V CE = 5.0 V 0.2 0.1 5 10 f = 1.0 MHz CAPACITANCE (pF) VCB = 45V 1 0.1 25 40 Input and Output Capacitance vs Reverse Bias Voltage 4 3 3 C te 2 C ob 1 0 50 75 100 125 TA - AMBIE NT TEMP ERATURE ( C) 150 0 Normalized Collector-Cutoff Current vs Ambient Temperature 4 8 12 16 REVERSE BIAS VOLTAGE (V) 20 Wideband Noise Frequency vs Source Resistance 1000 5 V CE = 5.0 V NF - NOISE FIGURE (dB) CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C I CBO - COLLE CTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature 1 10 I C - COLLECTOR CURRENT (mA) 100 10 1 25 50 75 100 125 T A - AMBIE NT TEMPERATURE ( C) 150 BC846A / BC846B / BC847A / BC847B / BC847C NPN General Purpose Amplifier 4 BANDWIDTH = 15.7 kHz I C = 100 A 3 I C = 30 A 2 1 0 1,000 I C = 10 A 2,000 5,000 10,000 20,000 R S - SOURCE RESISTANCE ( ) 50,000 100,000 (continued) Typical Characteristics (continued) Contours of Constant Gain Bandwidth Product (f T ) Noise Figure vs Frequency I C = 200 A, R S = 10 k 8 V CE - COLLECTOR VOLTAGE (V) NF - NOISE FIGURE (dB) 10 I C = 100 A, R S = 10 k 6 I C = 1.0 mA, R S = 500 4 I C = 1.0 mA, R S = 5.0 k 2 V CE = 5.0V 0 0.0001 0.001 0.01 0.1 1 f - FREQUENCY (MHz) 10 100 10 175 MHz 7 5 150 MHz 3 2 125 MHz 100 MHz 75 MHz 1 0.1 R S - SOURCE RESISTANCE ( ) R S - SOURCE RESISTANCE ( ) 10,000 3.0 dB 5,000 4.0 dB 2,000 6.0 dB 8.0 dB 500 V CE = 5.0 V 10 dB f = 100 Hz BANDWIDTH = 20 Hz 200 12 dB 14 dB 100 1 10,000 5,000 2.0 dB 2,000 3.0 dB 1,000 4.0 dB 500 V CE = 5.0 V f = 1.0 kHz BANDWIDTH 200 = 200 Hz 1 1,000 10000 1.0 dB 2.0 dB 3.0 dB 1000 4.0 dB 500 V CE = 5.0V f = 10kHz BANDWIDTH = 2.0kHz 200 100 1 8.0 dB 6.0 dB 10 100 I C - COLLECTOR CURRENT ( A) 10 100 I C- COLLECTOR CURRENT ( A) 1,000 Contours of Constant Narrow Band Noise Figure 8.0 dB 1000 R S - SOURCE RESISTANCE ( ) R S - SOURCE RESISTANCE ( ) Contours of Constant Narrow Band Noise Figure 2000 6.0 dB 100 10 100 I C - COLLECTOR CURRENT ( A) 5000 100 Contours of Constant Narrow Band Noise Figure Contours of Constant Narrow Band Noise Figure 1,000 1 10 I C - COLLECTOR CURRENT (mA) 10000 5000 2000 1000 2.0 dB 3.0 dB VCE = 4.0 dB 5.0V f = 1.0 MHz 200 BANDWIDTH 7.0 dB = 200kHz 8.0 dB 100 0.01 0.1 1 I C - COLLECTOR CURRENT ( A) 500 5.0 dB 6.0 dB 10 BC846A / BC846B / BC847A / BC847B / BC847C NPN General Purpose Amplifier (continued) Typical Common Emitter Characteristics h fe 1.3 h ie h oe 1.2 h re 1.1 h oe h re 1 h ie 0.9 0.8 I C = 1.0mA f = 1.0kHz T A = 25C h fe 0 5 10 15 20 V CE - COLLECTOR VOLTAGE (V) 25 Typical Common Emitter Characteristics CHARACTE RI STICS RE LATIV E TO VA LUE (TA =25C) 1.4 1.5 1.4 1.3 1.2 h ie VCE = 5.0V f = 1.0kHz I C = 1.0mA h fe 1.1 1 0.9 0.8 h oe 0.7 h fe 0.6 h re 0.5 -100 h ie -50 0 50 100 T J - JUNCTIO N TEMP ERATURE ( C) 100 f = 1.0kHz h re h oe Typical Common Emitter Characteristics CHARACTERISTICS RELATIVE TO VALUE(I C =1mA) CHAR ACTERISTI CS R ELATI VE TO VALUE(VCE =5V) Typical Common Emitter Characteristics (f = 1.0 kHz) h oe 150 BC846A / BC846B / BC847A / BC847B / BC847C NPN General Purpose Amplifier 10 h ie and h re h re 3 1 h oe h fe h ie 0.1 0.01 0.1 0.2 h fe 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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