FRANSYS MMBT4403 ELECTRONICS LIMITED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401) SOT-28 Ideal for Medium Power Amplification and | joa Dim_| Min | Max Switching [c] a A 0.37 | 0.51 B 1.19 1.40 TOP VIEW [ Cc 2.10 | 2.50 Mechanical Data EF] Fy t D | 089 | 4.05 Case: SOT-23, Molded Plastic =| koe 7 E | 045 | 0.61 Terminals: Solderable per MIL-STD-202, |e G 1.78 | 2.05 Method 208 Wo H 2.65 | 3.05 Terminal Connections: See Diagram ul J 0.013 | 0.15 Marking: K2T, R2T ta aah Ye K 0.89 | 4.10 Weight: 0.008 grams (approx.) J L e L 045 | 061 M 0.076 | 0.178 All Dimensions in mm Maximum Ratings @ Ta= 25 C unless otherwise specified Characteristic Symbol MMBT4403 Unit Collector-Base Voltage VcBo -40 Vv Collector-Emitter Voltage VcEO -40 Vv Emitter-Base Voltage VEBO -5.0 Vv Collector Current - Continuous (Note 1) Ic -600 mA Power Dissipation (Note 1) Pg 350 mw Thermal Resistance, Junction to Ambient (Note 1) R va 357 KW Operating and Storage and Temperature Range Tj, Tste -55 to +150 Cc Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, dutycycle 2%.Electrical Characteristics @ Ta= 25 C unless otherwise specified Characteristic [Symbol | Min | Max | Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V(BR)}CBO -40 Vv Ic =-100 A, le =0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 Vv Ic = -1.0MA, Ip = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 Vv lE=-100 A,Ic=0 Collector Cutoff Current IcEx -100 nA Voce = -35V, VeBorr) = -0.4V Base Cutoff Current IBL -100 nA Voce = -35V, VeBiorr) = -0.4V ON CHARACTERISTICS (Note 2) 30 Io = -100UA, VcE= -1.0V 60 lo = -1.0MA, Voce = -1.0V DC Current Gain Nee 100 Io = -10mA, Vce= -1.0V 100 300 lo =-150mA, VcE= -2.0V 20 Io =-500MA, Voce = -2.0V Collector-Emitter Saturation Voltage Vce(SaT) oe V IC = tooma ie = oma Base- Emitter Saturation Voltage Veesan | 2-75 0 Vv IC = SN ie = ern SMALL SIGNAL CHARACTERISTICS Output Capacitance Cob 8.5 pF Ves = -10V, f = 1.0MHZz, le = 0 Input Capacitance Ceb 30 pF Vep = -0.5V, f = 1.0MHz, Ic = 0 Input Impedance hie 1.5 15 k Voltage Feedback Ratio hre 0.1 8.0 x104 | Voge = -10V, Ic =-1.0mA, Small Signal Current Gain Nte 60 500 f= 1.0kHz Output Admittance Noe 1.0 100 S$ Current Gain-Bandwidth Product fr 200 MHz Vc sone. Ic = -20mA, SWITCHING CHARACTERISTICS Delay Time ta 15 ns Voc = -30V, Ic = -150mA, Rise Time tr 20 ns VBE(otf) = -2.0V, Ip1 = -15mA Storage Time ts 225 ns Voc = -30V, Ic = -150mA, Fall Time ty 30 ns Ii = Ip2 = -15mA Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, dutycycle 2%.