MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# BCW68G Features PNP Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Frequency l Epitaxial Planar Die Construction Signal Transistor 330mW Mechanical Data SOT-23 l Case: SOT-23, Molded Plastic A l Terminals: Solderable per MIL-STD-202, Method 208 D l Marking: DG l Weight: 0.008 grams ( approx.) C B Maximum Ratings @ 25oC Unless Otherwise Specified F Charateristic Symbol VCEO Value Unit -45 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -5 V Collector Current(DC) IC -800 mA Collector-Emitter Voltage ICM -1000 mA Base Current(DC) IB -100 mA Peak Base Current IBM -200 mA Power Dissipation@T s=79oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Soldering Point Pd 330 mW RJA 285(1) Operating & Storage Temperature H G Peak Collector Current RJS E 215 Tj, TSTG -55~150 Notes: o J K DIMENSIONS DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE C/W Suggested Solder Pad Layout o C/W .031 .800 o C .035 .900 .079 2.000 (1) Valid provided that leads are kept at ambient temperature. .037 .950 .037 .950 www.mccsemi.com inches mm MCC BCW68G Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min. TYP. Max. Unit hFE hFE hFE hFE 50 120 160 60 - - 250 - - - 400 - - - - - Collector-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA VCEsat VCEsat - - - - 0.3 0.7 V V Base-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA VBEsat VBEsat - - - - 1.25 2 V V Collector-Emitter Breakdown Voltage at IC = 10mA, IB = 0 V(BR)CEO 45 - - V Collector-Base Breakdown Voltage at IC = 10A, IB = 0 V(BR)CBO 60 - - V Emitter-Base Breakdown Voltage at IE = 10A, at IC = 0 V(BR)EBO 5 - - V ICBO ICBO - - - - 20 20 nA A IEBO - - 20 nA fT - 200 - MHz Collector-Base Capacitance at VCB = 10V, f = 1MHz CCB - 6 - pF Emitter-Base Capacitance at VEB = 0.5V, f = 1MHz CEB - 60 - pF (1) DC Current Gain at VCE = 10V, IC = 100A at VCE = 1V, IC = 10mA at VCE = 1V, IC = 100mA at VCE = 2V, IC = 500mA Collector-Base Cut-off Current at VCB = 45V, IE = 0 at VCB = 45V, IE = 0, TA = 150C Emitter-Base Cut-off Current at VEB = 4V, IC = 0 Gain-Bandwidth Product at VCE = 5V, IC = 50mA, f = 20MHZ Note: (1) Pulse test: t 300s, D = 2% www.mccsemi.com