Features
l Ideally Suited for Automatic Insertion
l 150oC Junction Temperature
l Low Current, Low Frequency
l Epitaxial Planar Die Construction
Mechanical Data
l Case: SOT-23, Molded Plastic
l Terminals: Solderable per MIL-STD-202, Method 208
l Marking: DG
l Weight: 0.008 grams ( approx.)
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage
VCEO
-45 V
Collector-Base Voltage
VCBO
-60 V
Emitter-Base Voltage
VEBO
-5 V
Collector Current(DC) I
C
-800 mA
Peak Collector Current I
CM
-1000 mA
Base Current(DC) I
B
-100 mA
Peak Base Current I
BM
-200 mA
Power Dissipation@T
s
=79oC P
d
330 mW
Thermal Resistance, Junction to
Ambient Air
285(1) oC/W
Thermal Resistance, Junction to
Soldering Point
215 oC/W
Operating & Storage Temperature Tj, TSTG -55~150 oC
Notes:
(1) Valid provided that leads are kept at
ambient temperature.
BCW68G
PNP Small
Signal Transistor
330mW
RθJA
RθJS
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
A
B
C
D
E
F
G
H
J
SOT-23
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omponents
21201 Itasca Street Chatsworth
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MCC
Electrical Characteristics (TA= 25°C unless otherwise noted)
Symbol Min. TYP. Max. Unit
DC Current Gain(1)
at VCE = 10V, IC = 100µAh
FE 50 –––
at VCE = 1V, IC = 10mA hFE 120 –––
at VCE = 1V, IC = 100mA hFE 160 250 400 –
at VCE = 2V, IC = 500mA hFE 60 –––
Collector-Emitter Saturation Voltage(1)
at IC = 100mA, IB = 10mA VCEsat ––0.3 V
at IC = 500mA, IB = 50mA VCEsat ––0.7 V
Base-Emitter Saturation Voltage(1)
at IC = 100mA, IB = 10mA VBEsat ––1.25 V
at IC = 500mA, IB = 50mA VBEsat ––2V
Collector-Emitter Breakdown Voltage
at IC = 10mA, IB = 0 V(BR)CEO 45 ––V
Collector-Base Breakdown Voltage
at IC = 10µA, IB = 0 V(BR)CBO 60 ––V
Emitter-Base Breakdown Voltage
at IE = 10µA, at IC = 0 V(BR)EBO 5––V
Collector-Base Cut-off Current
at VCB = 45V, IE = 0 ICBO ––20 nA
at VCB = 45V, IE = 0, TA= 150°CI
CBO ––20 µA
Emitter-Base Cut-off Current
at VEB = 4V, IC = 0 IEBO ––20 nA
Gain-Bandwidth Product
at VCE = 5V, IC= 50mA, f = 20MHZ
fT–200 –MHz
Collector-Base Capacitance
at VCB = 10V, f = 1MHz CCB –6–pF
Emitter-Base Capacitance
at VEB = 0.5V, f = 1MHz CEB –60 –pF
Note: (1) Pulse test: t ≤300µs, D = 2%
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MCC
BCW68G
