Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
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▼ Dynamic dv/dt Rating BVDSS 600/675V
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▼ Repetitive Avalanche Rated RDS(ON) 0.75Ω
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▼ Fast Switching ID9A
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▼ Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
EAR Repetitive Avalanche Energy mJ
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 0.8 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data & specifications subject to change without notice
AP09N70P/R
Rating
600/675
9
40
156
9
5
305
1.25
-55 to 150
Parameter
200218032
Parameter
Linear Derating Factor
- /A
9
Storage Temperature Range -55 to 150
AP09N70 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262
type provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching,ruggedized
design and cost-effectiveness.
The TO-220 and TO-262 package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power supplies
,DC-AC converters and high current high speed switching circuits.
G
D
S
± 30
GDSTO-262(R)
GDSTO-220(P)
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA / - 600 - - V
VGS=0V, ID=1mA / A 675 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4.5A - - 0.75 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=4.5A - 4.5 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=--
nA
QgTotal Gate Charge3ID=9A - 44 - nC
Qgs Gate-Source Charge VDS=480V - 11 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 12 - nC
td(on) Turn-on Delay Time3VDD=300V - 19 - ns
trRise Time ID=9A - 21 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 56 - ns
tfFall Time RD=34Ω-24-ns
Ciss Input Capacitance VGS=0V - 2660 - pF
Coss Output Capacitance VDS=25V - 170 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 9 A
ISM Pulsed Source Current ( Body Diode )1--40
A
VSD Forward On Voltage3Tj=25℃, IS=9A, VGS=0V - - 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=6.8mH , RG=25Ω , IAS=9A.
3.Pulse width <300us , duty cycle <2%.
Ordering Code
AP09N70P(/R)- X : X Denote BVDSS Grade
Blank = BVDSS 600V
A = BVDSS 675V
AP09N70P/R
±100
± 30V
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
AP09N70P/R
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normal ized B VDSS (V)
0
2
4
6
8
10
024681012
VDS , Drain-to-Source Voltage (V)
ID , Drain Curre nt (A)
TC=25oC
VG=6.0V
VG=5.0V
VG=4.5V
VG=4.0V
VG=3.5V
VG=10V
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normal ized RDS(ON)
VG=10V
I
D=4.5A
0
2
4
6
8
10
0 4 8 12 16 20 24
VDS , Drain-to-Source Voltage (V)
ID , Drain Curre nt (A)
TC=150 oC
VG=6.0V
VG=5.0V
VG=4.5V
VG=4.0V
VG=3.5V
VG=10V
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
AP09N70P/R
0
1
2
3
4
5
6
7
8
9
10
25 50 75 100 125 150
Tc , Case Temperature ( C)
ID , Drain Curre nt (A)
0
50
100
150
0 50 100 150
Tc , Case Temperature( oC)
PD (W)
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
0.1
1
10
100
1 10 100 1000 10000
VDS (V)
ID (A)
Tc=25oC
Single Pulse
10us
100us
1ms
10ms
100ms
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
AP09N70P/R
0
1
2
3
4
5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
VGS(th) (V)
0
2
4
6
8
10
12
14
16
0 10203040506070
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
ID=9A
VDS=320V
VDS=400V
VDS=480V
1
100
10000
1 5 9 13 17 21 25 29
VDS (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSD (V)
IS (A)
Tj = 150 oCTj = 25 oC
AP09N70P/
R
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
0.5x RATED VDS
TO THE
OSCILLOSCOPE
-
+10 V
D
G
S
VDS
VGS
RG
RD
0.8 x RATED VDS
TO THE
OSCILLOSCOPE
-
+
D
G
S
VDS
VGS
ID
IG
1~ 3 m
A
