PBSS5130T,215 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet 2003 Dec 12

DISCRETE SEMICONDUCTORS

PBSS5130T

30 V, 1 A

PNP low VCEsat (BISS) transistor

ook, halfpage

M3D088

2003 Dec 12 2

NXP Semiconductors Product data sheet

30 V, 1 A

PNP low VCEsat (BISS) transistor PBSS5130T

FEATURES

•Low collector-emitter saturation volt age VCEsat

•High collector current capability: IC and ICM

•Higher efficiency leading to less heat generation

•Reduced printed-circuit bo ard requirements

•Cost effective alternative to MOSFETS in specific

applications.

APPLICATIONS

•Power management

– DC/DC converters

– Supply line switching

– Battery charger

– LCD backlighting.

•Peripheral drivers

– Driver in low su pply voltage applications (e.g. lamps

and LEDs)

– Inductive load driver (e.g. relays ,

buzzers and motors).

DESCRIPTION

PNP low VCEsat transistor in a SOT23 plastic package.

MARKING

Note

1. * = p : made in Hong Kong

* = t : made in Malaysia

* = W : made in China.

TYPE NUMBER MARKING CODE(1)

PBSS5130T *3E

PINNING

PIN DESCRIPTION

1base

2emitter

3collector

handbook, halfpage

MAM256

Top view

Fig.1 Simplified outline (SOT23 ) and symbo l .

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage −30 V

ICcollector current (DC) −1 A

ICRP repetitive peak collector

current −1.5 A

RCEsat equivalent on-resistance 220 mΩ

2003 Dec 12 3

NXP Semiconductors Pr oduct data shee t

30 V, 1 A

PNP low VCEsat (BISS) transistor PBSS5130T

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Max imum Rating System (IEC 60134).

Notes

1. Device mounted o n an FR4 printed-circuit board , single-side d copper, tinplated, s tandard footprint.

2. Device mounted on an FR4 printed-circuit board, single sided-copper, tinplated, mounting pad for collector 1 cm2.

THERMAL CHARACTE RISTICS

Notes

1. Device mounted o n an FR4 printed-circuit board , single-side d copper, tinplated and standard footp rint.

2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm2.

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PBSS5130T −plastic surface mounted package; 3 leads SOT23

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter − −30 V

VCEO collector-emitter voltage open base − −30 V

VEBO emitter-base voltage open collector − −5 V

ICcollector current (DC) − −1 A

ICM peak collector current − −3 A

IBM peak base current − −300 mA

Ptot total power dissipation Tamb ≤ 25 °C

note 1 −300 mW

note 2 −480 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient in free air

note 1 417 K/W

note 2 260 K/W

2003 Dec 12 4

NXP Semiconductors Pr oduct data shee t

30 V, 1 A

PNP low VCEsat (BISS) transistor PBSS5130T

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = −30 V; IE = 0 − − −100 nA

VCB = −30 V; IE = 0; Tj = 150 °C− − −50 μA

IEBO emitter-base cut-off current VEB = −4 V; IC = 0 − − −100 nA

hFE DC current gain VCE = −2 V; IC = −100 mA 300 450 −

VCE = −2 V; IC = −500 mA 260 350 −

VCE = −2 V; IC = −1 A 210 290 −

VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −1 mA − − −100 mV

IC = −1 A; IB = −50 mA − − −225 mV

RCEsat equivalent on-re sistance IC = −500 mA; IB = −50 mA; note 1 − − 220 mΩ

VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA − − −0.75 V

fTtransition frequency IC = −100 mA; VCE = −10 V;

f = 100 MHz 100 200 −MHz

Cccollector ca pacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 28 pF

2003 Dec 12 5

NXP Semiconductors Pr oduct data shee t

30 V, 1 A

PNP low VCEsat (BISS) transistor PBSS5130T

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

2003 Dec 12 6

NXP Semiconductors Pr oduct data shee t

30 V, 1 A

PNP low VCEsat (BISS) transistor PBSS5130T

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or co mpleting a design.

2. The product s ta tus of device(s) described in this do cument may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t s pecification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tio n.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

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case of any incons istency or conflict between information

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described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the tech nical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/01/pp7 Date of release: 2003 Dec 12 Document orde r number: 9397 750 11901