Transistors 2SB0621 (2SB621), 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.00.2 5.10.2 5.00.2 Features 0.70.2 * Low collector-emitter saturation voltage VCE(sat) * High transition frequency fT 12.90.5 0.70.1 Absolute Maximum Ratings Ta = 25C Collector-base voltage (Emitter open) 2SB0621 Symbol Rating Unit VCBO -30 V -60 2SB0621A Collector-emitter voltage 2SB0621 (Base open) 2SB0621A VCEO Emitter-base voltage (Collector open) VEBO 0.45+0.15 -0.1 0.45+0.15 -0.1 2.5+0.6 -0.2 -25 2.5+0.6 -0.2 V 1 -50 -5 2 3 2.30.2 Parameter V Collector current IC -1 A Peak collector current ICP -1.5 A Collector power dissipation PC 750 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package Electrical Characteristics Ta = 25C 3C Parameter Symbol Collector-base voltage (Emitter open) 2SB0621 Collector-emitter voltage (Base open) 2SB0621 Conditions IC = -10 A, IE = 0 VCBO Min Typ Max -30 Unit V -60 2SB0621A IC = -2 mA, IB = 0 VCEO -25 V -50 2SB0621A Emitter-base voltage (Collector open) VEBO IE = -10 A, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = -20 V, IE = 0 Forward current transfer ratio hFE1 * VCE = -10 V, IC = -500 mA 85 VCE = -5 V, IC = -1 A 50 hFE2 -5 V - 0.1 340 A Collector-emitter saturation voltage VCE(sat) IC = -500 mA, IB = -50 mA - 0.2 - 0.4 V Base-emitter saturation voltage VBE(sat) IC = -500 mA, IB = -50 mA - 0.85 -1.2 V Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob VCB = -10 V, IE = 50 mA, f = 200 MHz 200 VCB = -10 V, IE = 0, f = 1 MHz 20 MHz 30 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2003 SJC00044CED 1 2SB0621, 2SB0621A PC Ta IC VCE -9 mA -8 mA -1.00 -7 mA -6 mA - 0.75 0.4 -5 mA -4 mA -3 mA - 0.50 0.2 -2 mA - 0.25 80 120 0 160 -2 0 VCE(sat) IC -1 Ta = 75C 25C -1 25C -10 75C - 0.01 - 0.01 Collector output capacitance C (pF) (Common base, input open circuited) ob Transition frequency fT (MHz) 120 80 40 Emitter current IE (mA) -1 100 50 -12 300 Ta = 75C 200 25C -25C 100 - 0.1 -1 -10 VCER RBE 30 20 10 -100 Collector-base voltage VCB (V) SJC00044CED -10 Collector current IC (A) IE = 0 f = 1 MHz Ta = 25C -10 -8 400 0 - 0.01 -10 40 0 -1 -6 VCE = -10 V Cob VCB 160 10 500 Collector current IC (A) VCB = -10 V Ta = 25C 1 - 0.1 -4 hFE IC Ta = -25C -1 fT I E 0 -2 0 Base current IB (mA) IC / IB = 10 -10 Collector current IC (A) 200 0 -10 - 0.1 -25C - 0.1 -100 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) -10 - 0.01 - 0.01 -8 - 0.2 VBE(sat) IC IC / IB = 10 - 0.1 -6 - 0.4 Collector-emitter voltage VCE (V) Ambient temperature Ta (C) -100 -4 - 0.6 Forward current transfer ratio hFE 40 -1 mA - 0.8 -120 Collector-emitter voltage (V) (Resistor between B and E) VCER 0 VCE = -10 V Ta = 25C -1.0 IB = -10 mA Collector current IC (A) Collector current IC (A) Collector power dissipation PC (W) 0.6 -1.2 Ta = 25C -1.25 0.8 0 2 IC I B -1.50 1.0 IC = -10 mA Ta = 25C -100 -80 -60 2SB0621A -40 2SB0621 -20 0 0.1 1 10 100 Base-emitter resistance RBE (k) 2SB0621, 2SB0621A ICEO Ta 104 Safe operation area -10 VCE = -10 V Single pulse Ta = 25C ICP 102 -1 IC t = 10 ms t=1s - 0.1 - 0.01 2SB0621 10 1 0 40 80 120 Ambient temperature Ta (C) 160 - 0.001 - 0.1 -1 -10 2SB0621A Collector current IC (A) ICEO (Ta) ICEO (Ta = 25C) 103 -100 Collector-emitter voltage VCE (V) SJC00044CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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