DS12004 Rev. J-2 1 of 2 BAS19 / BAS20 / BAS21
BAS19 / BAS20 / BAS21
SURFACE MOUNT FAST SWITCHING DIODE
Features
•Case: SOT-23, Molded Plastic
•Terminals: Solderable per MIL-STD-202,
Method 208
•Polarity: See Diagram
•BAS19 Marking: A8, KA8
•BAS20 Marking: A81, KT2
•BAS21 Marking: A82, KT3
•Weight: 0.008 grams (approx.)
Mechanical Data
A
E
JL
TOP VIEW
M
BC
H
G
D
K
SOT-23
Dim Min Max
A0.37 0.51
B1.19 1.40
C2.10 2.50
D0.89 1.05
E0.45 0.61
G1.78 2.05
H2.65 3.05
J0.013 0.15
K0.89 1.10
L0.45 0.61
M0.076 0.178
All Dimensions in mm
Characteristic Symbol BAS19 BAS20 BAS21 Unit
Repetitive Peak Reverse Voltage VRRM 120 200 250 V
Working Peak Reverse Voltage
DC Blocking Voltage VRWM
VR100 150 200 V
RMS Reverse Voltage VR(RMS) 71 106 141 V
Forward Continuous Current (Note 1) IFM 400 mA
Average Rectified Output Current (Note 1) IO200 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
@ t = 1.0s IFSM 2.5
0.5 A
Repetitive Peak Forward Surge Current IFRM 625 mA
Power Dissipation Pd250 mW
Thermal Resistance Junction to Ambient Air (Note 1) RθJA 500 K/W
Operating and Storage Temperature Range Tj,T
STG -65 to +150 °C
Maximum Ratings@ TA= 25°C unless otherwise specified
Note: 1. Valid provided that terminals are kept at ambient temperature.
Characteristic Symbol Min Max Unit Test Condition
Maximum Forward Voltage VFM 1.0
1.25 VIF= 100mA
IF= 200mA
Maximum Peak Reverse Current
@ Rated DC Blocking Voltage IRM 100
15 nA
µATj= 25°C
Tj= 100°C
Junction Capacitance Cj5.0 pF VR= 0, f = 1.0MHz
Reverse Recovery Time trr 50 ns IF= IR= 30mA,
Irr = 0.1 x IR,R
L= 100Ω
Electrical Characteristics @ TA= 25°C unless otherwise specified
•Fast Switching Speed
•Surface Mount Package Ideally Suited for
Automatic Insertion
•For General Purpose Switching Applications
•High Conductance
POWER SEMICONDUCTOR