GENL INSTR/ POWER SBE DM 3850137 0004970 44? magrc General T-62-1 as yer Semiconductor Industries, Inc. DESCRIPTION This TransZorb TVS chip series is designed for hybrid, smart card and connector applications. High current handling capabilities and fast response time makes these TVS chips excellent for protection against damaging transient voltages caused by lightning, load switching, and electrostatic discharge. This series of silicon transient suppressor chips has a peak pulse rating of 500 watts for one millisecond. FEATURES * Voltage Range: 5V - 100V + 500 watts Peak Pulse Power * Mesa Construction Glass-Passivated + Lot Traceability MAXIMUM RATINGS Power Dissipation @ T, = 25C (10/1000ps): 500 watts - Forward Surge Rating @ 25C Unidirectional only: 70 amps (1/20 sec haif cycle) * Operating and Storage Temperature: -55C to +150C PHYSICAL CHARACTERISTICS DIE CELL Size: .070 inches sq. -100 inches dia. Thickness - Unidirectional: .014 inches max. - Bidirectional: .0155 inches max. .055 inches max. Bond Area: .055 inches sq. max. .100 inches Metallized Surface: Ni-Ni-Au Silver Clad Alum. Disks Polarity: Unidirectional Unidirectional & Bidirectional & Bidirectional TransZors TVS CHIPS 1 esse: em ence. Store l enc} } DIE CELL NOTES 1. Unidirectional die are cath- ode topside orientation 2. A TransZorb TVS ts nor- mally selected according to the Reverse Stand-Off Voltage (VA) which should be equal to or greater than the DC or the Contnuous Peak Operating Voltage 3. The J, limit is doubled for bidirectional devices with Vp equal to or less than 10V ABBREVIATIONS V,, The Stand-Off Voltage the applied reverse voltage to assure a nonconductive condition BY min THe minimum Teakdown Voltage the device will exhibit and is used to assure that con- duction does nat occur Prior to this voltage level at 25C. Vg The maximum peak volt- age appearing across the device when subjected to the peak pulse current ipp Peak Pulse Currant - (see Fig 2) TEST WAVEFORM (Waveform - See Figure 2 7h y ae Non-repetitve) g 100 {> nsec 3 # Poak Valis -Ipp {t= 1000 usec i : 8 Halt-Value - BP 3 ' 2 50 10x 1000 Wavetorm 4 a 88 defined by REA 3 $ ot Y Q 100ns tus 10ps 100us ims 10ms Q : 2 3 a ty Pulse Time -- sec t+ Time -- msec Figure 1 ~ Peak Pulse Powor vs. Pulse Time Figure 2 Pulse Wavatorm 2-4GENL INSTR/ POWER SbE D MM 3890137 0004971 383 ELECTRICAL CHARACTERISTICS @ 25C MEGIc GENERAL MAXIMUM | MAXIMUM | MAXIMUM SEMICONDUCTOR | REVERSE | BREAKDOWN | CLAMPING PEAK REVERSE INDUSTRIES STAND-OFF | VOLTAGE VOLTAGE PULSE LEAKAGE DEVICE NUMBER | VOLTAGE @ Ipp CURRENT @V (NOTE 2) BV VOLTS (FIG 2) (FIG 2) (NOTE. 3) DIE CELL VR @L Vo Ipp 1 VOLTS | MIN mA | VOLTS A uA MDSA5.0 MCSAS5.0 5.0 640 10 9.2 54.0 600 MDSA6.0 MCSA6.0 6.0 6.67 10 10.3 48.5 600 MDSA6.5 =MCSA6.5 65 7.22 10 11.2 447 400 MDSA7.0 | MCSA7.0 7.0 7.78 10 12.0 41.7 150 MDSA7.5 MCSA7.5 7.5 8.33 1 12.9 38.8 50 MDSA8.0 MCSA8.0 8.0 8.89 1 13.6 36.7 25 MDSA8.5 MCSA8.5 8.5 9.44 1 14.4 34.7 10 MDSA9.0 MCSAQ.0 9.0 10.0 1 15.4 32.5 5 MDSA10 = MCSA10 10 14 1 17.0 29.4 3 MDSA11_ MCSA11 11 12.2 1 18.2 27.4 3 MDSA12 MCSA12 12 13.3 1 19.9 25.1 3 MDSA13. MCSA13 13 14.4 1 21.5 23.2 3 MDSA14. - MCSA14 14 15.6 1 25.8 21.5 3 MDSA15 =MCSA15 15 16.7 1 24.4 20.6 3 MDSA16 = MCSA16 16 17.8 1 26.0 19.2 3 MDSA17.- MCSAt7 17 18.9 1 27.6 18.1 3 MDSA18 = MCSA18 18 20.0 1 29.2 17.2 3 MDSA20 MCSA20 20 22.2 1 32.4 15.4 3 MDSA22.- MCSA22 22 24.4 1 35.5 14.1 3 MDSA24 MCSA24 24 26.7 1 38.9 12.8 3 MDSA26 MCSA26 26 28.9 1 42.1 11.9 3 MDSA28 MCSA28 28 31.1 1 45.4 11.0 3 MDSA30_ =-MCSA30 30 33.3 1 48.4 10.3 3 MDSA33. -- MCSA33 33 36.7 1 53.3 9.4 3 MDSA36. - MCSA36 36 40.0 1 58.1 86 3 MDSA40 = MCSA40 40 44.4 1 645 78 3 MDSA43. MCSA43 43 478 1 69.4 7.2 3 MDSA45. MCSA45 45 50.0 1 72.7 6.9 3 MDSA48 = MCSA48 48 53.3 1 774 6.5 3 MDSAS1_ = MCSAS51 51 56.7 1 82.4 6.1 3 MDSA54 =MCSA54 54 60.0 1 87.1 5.7 3 MDSA58 = MCSAS58 58 64.4 1 93.6 5.3 3 MDSA60 =MCSAGO 60 66.7 1 96.8 5.2 3 MDSA64 = MCSA64 64 71.4 1 103.0 49 3 MDSA70 = MCSA70 70 778 1 113.0 4.4 3 MDSA75 =. MCSA75 75 83.3 1 121.0 4.4 3 MDSA78 =MCSA78 78 86.7 1 126.0 4.0 3 MDSA85 =MCSA85 85 94.4 1 137.0 3.6 3 MDSA90 = MCSA90 90 100.0 1 146.0 3.4 3 To specify bidirectional die and cells, add a "C" suffix to device number. Unidirectional cells will have one matted silver disc to indicate cathode. 2-5 Nh rT ee