MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD (3 TYP.) P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 3.70 94.0 B 3.1500.01 Dimensions Inches Millimeters K 0.51 13.0 80.00.25 L 0.47 12.0 C 1.89 48.0 M 0.30 7.5 D 1.18 Max. 30.0 Max. N 0.28 7.0 E 0.90 23.0 P 0.256 Dia. Dia. 6.5 F 0.83 21.2 Q 0.31 8.0 G 0.71 18.0 R M5 Metric M5 H 0.67 17.0 S 0.16 4.0 J 0.63 16.0 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM150DY-24H is a 1200V (VCES), 150 Ampere Dual IGBT Module. Type Current Rating Amperes VCES Volts (x 50) CM 150 24 Sep.2000 MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Symbol Ratings Units Junction Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 150 Amperes ICM 300* Amperes IE 150 Amperes Peak Emitter Current** IEM 300* Amperes Maximum Collector Dissipation (TC = 25C, Tj 150C) Pc 1100 Watts Mounting Torque, M5 Main Terminal - 1.47 ~ 1.96 N*m Mounting Torque, M6 Mounting - 1.96 ~ 2.94 N*m - 270 Grams Viso 2500 Vrms Collector Current (TC = 25C) Peak Collector Current Emitter Current** (TC = 25C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V - Gate Leakage Current IGES VGE = VGES, VCE = 0V - - 1.0 mA - 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V - 2.5 3.4** Volts IC = 150A, VGE = 15V, Tj = 150C - 2.25 - Volts Total Gate Charge QG VCC = 600V, IC = 150A, VGE = 15V - 750 - nC Emitter-Collector Voltage VEC IE = 150A, VGE = 0V - - 3.5 Volts Test Conditions Min. Typ. Max. Units - - 30 nF VGE = 0V, VCE = 10V - - 10.5 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres - - 6 nF Resistive Turn-on Delay Time td(on) - - 250 ns Load Rise Time Switching Turn-off Delay Time Times Fall Time tr VCC = 600V, IC = 150A, - - 350 ns td(off) VGE1 = VGE2 = 15V, RG = 2.1 - - 300 ns - - 350 ns Diode Reverse Recovery Time trr tf IE = 150A, diE/dt = -300A/s - - 250 ns Diode Reverse Recovery Charge Qrr IE = 150A, diE/dt = -300A/s - 1.11 - C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT - - 0.11 C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi - - 0.24 C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied - - 0.065 C/W Sep.2000 MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE 300 15 VGE = 20V 200 11 150 10 100 9 50 5 12 7 VCE = 10V Tj = 25C Tj = 125C 250 200 150 100 50 8 0 0 0 2 4 6 8 0 10 4 12 16 4 2 IC = 60A 12 16 20 3 2 102 7 5 3 3 2.5 3.0 td(on) tr 102 7 5 VCC = 600V VGE = 15V RG = 2.1 Tj = 125C 3 2 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT, IC, (AMPERES) 100 10-1 10-1 3.5 Cres 100 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 101 di/dt = -300A/sec Tj = 25C 101 101 102 EMITTER CURRENT, IE, (AMPERES) 102 GATE CHARGE, VGE 102 Irr t rr 101 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) tf 2 101 1 10 2.0 103 td(off) Coes EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) REVERSE RECOVERY TIME, t rr, (ns) 7 5 1.5 300 250 101 VGE = 0V GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 200 Cies 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 150 102 Tj = 25C 101 1.0 0 8 7 5 100 CAPACITANCE VS. VCE (TYPICAL) 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 150A 4 50 COLLECTOR-CURRENT, IC, (AMPERES) REVERSE RECOVERY CURRENT, Irr, (AMPERES) IC = 300A 0 1 0 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25C 6 2 0 20 103 10 8 3 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 8 VGE = 15V Tj = 25C Tj = 125C 4 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 300 250 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 150A 16 VCC = 400V VCC = 600V 12 8 4 0 0 200 400 600 800 1000 1200 GATE CHARGE, QG, (nC) Sep.2000 MITSUBISHI IGBT MODULES CM150DY-24H 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.11C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.24C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.2000