Sep.2000
B
C
F
D
Q
A
S
S
G
K
L
M
E
EH
H
P - DIA. (2 TYP.)
R - M5 THD (3 TYP.)
N
C2E1
JNJJ
C1E2
G1 E1 E2 G2
E1
C1
E2
TAB#110 t=0.5
G1
E2
G2
C2E1
Dimensions Inches Millimeters
A 3.70 94.0
B 3.150±0.01 80.0±0.25
C 1.89 48.0
D 1.18 Max. 30.0 Max.
E 0.90 23.0
F 0.83 21.2
G 0.71 18.0
H 0.67 17.0
J 0.63 16.0
Dimensions Inches Millimeters
K 0.51 13.0
L 0.47 12.0
M 0.30 7.5
N 0.28 7.0
P 0.256 Dia. Dia. 6.5
Q 0.31 8.0
R M5 Metric M5
S 0.16 4.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
er y free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offer ing simplified system as-
sembly and thermal management.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery
Free-Wheel Diode
uHigh Frequency Operation
uIsolated Baseplate for Easy
Heat Sinking
Applications:
uAC Motor Control
uMotion/Ser vo Control
uUPS
uWelding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM150DY-24H
is a 1200V (VCES), 150 Ampere
Dual IGBT Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 150 24
MITSUBISHI IGBT MODULES
CM150DY-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Outline Drawing and Circuit Diagram
Sep.2000
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Symbol Ratings Units
Junction Temper ature Tj–40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (TC = 25°C) IC150 Amperes
Peak Collector Current ICM 300* Amperes
Emitter Current** (TC = 25°C) IE150 Amperes
Peak Emitter Current** IEM 300* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc1100 Watts
Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m
Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m
Weight – 270 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V – 2.5 3.4** Volts
IC = 150A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge QGVCC = 600V, IC = 150A, VGE = 15V – 750 – nC
Emitter-Collector Voltage VEC IE = 150A, VGE = 0V – – 3.5 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 30 nF
Output Capacitance Coes VGE = 0V, VCE = 10V – – 10.5 nF
Re verse Transfer Capacitance Cres – – 6 nF
Resistive Turn-on Delay Time td(on) – – 250 ns
Load Rise Time trVCC = 600V, IC = 150A, – – 350 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 2.1Ω– – 300 ns
Times F all Time tf– – 350 ns
Diode Reverse Recovery Time trr IE = 150A, diE/dt = –300A/µs – – 250 ns
Diode Reverse Recovery Charge Qrr IE = 150A, diE/dt = –300A/µs – 1.11 – µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.11 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.24 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.065 °C/W
MITSUBISHI IGBT MODULES
CM150DY-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Sep.2000
MITSUBISHI IGBT MODULES
CM150DY-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
300
0246810
150
50
0
V
GE
= 20V
15 12
11
8
7
T
j
= 25
o
C
100
200
250
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
300
048121620
200
150
100
50
0
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
250
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 50 100 150 200 300
4
3
2
1
0250
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
048121620
8
6
4
2
0
T
j
= 25°C
I
C
= 60A
I
C
= 300A
I
C
= 150A
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, I
E
, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
1
10
2
10
3
10
2
10
3
t
rr
I
rr
di/dt = -300A/µsec
T
j
= 25°C
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
10
1
10
2
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0 200 400 600 800 1000
16
12
8
4
0
V
CC
= 400V
I
C
= 150A
1200
V
CC
= 600V
COLLECTOR CURRENT, I
C
, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME, (ns)
10
1
10
3
7
5
3
2
1.0 1.5 2.0
10
2
7
5
3
2
2.5 3.0 3.5
T
j
= 25°C
10
1
10
3
7
5
3
2
10
1
23 57
10
2
10
2
7
5
3
2
23 57
10
3
t
d(off)
V
CC
= 600V
V
GE
= ±15V
R
G
= 2.1Ω
T
j
= 125°C
t
d(on)
t
f
t
r
Sep.2000
MITSUBISHI IGBT MODULES
CM150DY-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.11°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.24°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
