To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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April 1st, 2010
Renesas Electronics Corporation
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Rev.3.00 Nov 21, 2005 page 1 of 7
2SK1838(L), 2SK1838(S)
Silicon N Channel MOS FET REJ03G0980-0300
Rev.3.00
Nov 21, 2005
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for sw i t c hi ng regulator, DC-DC con vert er
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK(L)-(1))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
D
G
S
123
4
123
4
2SK1838(L), 2SK1838(S)
Rev.3.00 Nov 21, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 250 V
Gate to source voltage VGSS ±30 V
Drain current ID 1 A
Drain peak current ID(pulse)*1 2 A
Body to drain diode reverse drain current IDR 1 A
Channel dissipation Pch*2 10 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 250 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 50 µA VDS = 200 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V VDS = 10 V, ID = 1 mA
Forward transfer admittance |yfs| 0.3 0.5 — S VDS = 10 V, ID = 0.5 A *3
Static drain to source on state
resistance RDS(on) — 5.5 8.0 Ω I
D = 0.5 A, VGS = 10 V *3
Input capacitance Ciss — 60 — pF
Output capacitance Coss — 30 — pF
Reverse transfer capacitance Crss — 5 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 5 — ns
Rise time tr — 6 — ns
Turn-off delay time td(off) — 10 — ns
Fall time tf — 4.5 — ns
VGS = 10 V, ID = 0.5 A,
RL = 60 Ω
Body to drain diode forward voltage VDF — 0.96 — V IF = 1 A, VGS = 0
Body to drain diode reverse recover y
time trr — 160 — ns
IF = 1 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK1838(L), 2SK1838(S)
Rev.3.00 Nov 21, 2005 page 3 of 7
Main Characteristics
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Drain Current
20
15
10
5
050 100 150 200 1 3 10 30 100 300 100
0
0.1
0.3
1
3
10
100 s
PW = 10 ms (1 shot)
10 s
µ
Operation in this area
is limited by R (on)
DS
1 ms
Ta = 25°C
0.03
0.01
DC Operation (Tc = 25
°
C)
µ
0 246810
0.2
0.4
0.6
0.8
1.0
Pulse Test
8 V
10 V
6 V
4.5 V
4 V
V = 3.5 V
GS
5 V
Tc = 75°C25°C
– 25°C
Pulse Test
V = 10 V
DS
0246810
0.2
0.4
0.6
0.8
1.0
04812
16 20
1
2
3
4
5
Pulse Test
0.5 A
0.2 A
I = 0.1 A
D
0.02 0.05 0.1 0.2 0.5 1 2
0.5
1
2
5
10
20
50
Pulse Test
V = 10 V
GS
2SK1838(L), 2SK1838(S)
Rev.3.00 Nov 21, 2005 page 4 of 7
Case Temperature TC (°C)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Switching Time t (ns)
Switching Characteristics
– 40 0 40 80 120 160
0
5
10
15
20
25
0.2 A
I = 0.5 A
D
Pulse Test
V = 10 V
GS
0.1 A
0.02 0.05 0.1 0.2 0.5 1 2
0.05
0.1
0.2
0.5
1
2
5
Tc = – 25 C
25 C
75 C
Pulse Test
V = 10 V
DS
0.05 0.1 0.2 0.5 1 2 5
10
20
50
100
200
500
1000
di / dt = 100 A / s
V = 0, Ta = 25 C
µ
GS
0 10 20304050
1
10
100
1000
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
048121620
100
200
300
400
500
100 V
50 V
V = 200 V
DD
V
GS
V
DS
I = 0.5 A
D
V = 200 V
DD
100 V
50 V
0
4
8
12
16
20
0.05 0.1 0.2 0.5 1 2 5
1
2
5
10
20
50
100
td (off)
tf
td (on)
tr
V
GS
= 10 V, V
DD
= 30 V
PW = 2 µs, duty ≤ 1 %
2SK1838(L), 2SK1838(S)
Rev.3.00 Nov 21, 2005 page 5 of 7
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
Switching Time Test Circuit Waveforms
0 0.4 0.8 1.2 1.6 2.0
0.2
0.4
0.6
0.8
1.0
Pulse Test
0, – 5 V
V = 10 V
GS
10 100 1 m 10 m 100 m 10
0.01
0.03
0.1
0.3
1.0
3
µµ
D = 1
0.5
0.2
0.1
0.05
0.02
1 shot Pulse
Tc = 25°C
0.01
1
θch – c(t) = s(t) ch – c
ch – c = 12.5°C / W. Tc = 25°C
PD = PW
T
PW
T
DM
γ•
θθ
Vin Monitor
Vout Monitor
R
V 30 V
50
Vin
10 V
D.U.T
DD
L
=
..
Ω
Vin 10 %
90 %
90 %
90 %
10 %
td (on) td (off)
trtf
Vout 10 %
2SK1838(L), 2SK1838(S)
Rev.3.00 Nov 21, 2005 page 6 of 7
Package Dimensions
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
3.1 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
Package Name
PRSS0004ZD-A DPAK(L)-(1) / DPAK(L)-(1)V
MASS[Typ.]
0.42g
RENESAS CodeJEITA Package Code
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
1.0 Max.
(0.1)(0.1)
Package Name
PRSS0004ZD-C DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28gSC-63
RENESAS CodeJEITA Package Code
Unit: mm
2SK1838(L), 2SK1838(S)
Rev.3.00 Nov 21, 2005 page 7 of 7
Ordering Information
Part Name Quantity Shipping Container
2SK1838L-E 3200 pcs Box (Sack)
2SK1838STL-E 3000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
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