TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /355
T4-LDS-0202 Rev. 1 (110638) Page 1 of 4
DEVICES LEVELS
2N2919 2N2919L 2N2919U JAN
2N2920 2N2920L 2N2920U JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 70 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 30 mAdc
One
Section 1
Both
Sections 2
Total Power Dissipation @ TA = +25°C PT 200 350 mW
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
NOTES:
1. Derate linearly 1.143mW/°C for TA > +25°C (one section)
2. Derate linearly 2.000mW/°C for TA > +25°C (both sections)
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
Vdc
IC = 10mAdc; Pulsed 60
Collector-Base Cutoff Current
ICBO
ηAdc
μAdc
VCB = 45Vdc
VCB = 70Vdc
2.0
10
Emitter-Base Cutoff Current
IEBO
VEB = 5.0Vdc
VEB = 6.0Vdc
2.0
10
η
Adc
μAdc
TO-78
U - Package
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0202 Rev. 1 (110638) Page 2 of 4
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERTICS
Forward-Current Transfer Ratio
IC = 10
μ
Adc, VCE = 5.0Vdc
IC = 100μAdc, VCE = 5.0Vdc
IC = 1.0mAdc, VCE = 5.0Vdc
2N2919, 2N2919L , 2N2919U hFE 60
100
150
240
325
600
IC = 10
μ
Adc, VCE = 5.0Vdc
IC = 100μAdc, VCE = 5.0Vdc
IC = 1.0mAdc, VCE = 5.0Vdc
2N2920, 2N2920L, 2N2920U hFE
175
235
300
600
800
1000
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 1.0mAdc, IB = 100
μ
Adc 0.3
Base-Emitter Saturation Voltage
VBE(sat)
Vdc
IC = 1.0mAdc, IB = 100
μ
Adc 0.5 1.0
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Current Transfer Ratio, Magnitude
|hfe|
IC = 0.5mAdc, VCE = 5.0Vdc, f = 20MHz 3.0 20
Small-Signal Short Circuit Input Impedance
hje
kΩ
IC = 1.0mAdc, VCE = 5Vdc, f = 1.0kHz 3.0 30
Small-Signal Short Circuit Output Admittance
hoe
μmhos
IC = 1.0mAdc, VCE = 5Vdc, f = 1.0kHz 60
Output Capacitance
VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 5.0 pF
Noise Figure
dB
IC = 10μAdc, VCE = 5Vdc, f = 100Hz, RG = 10kΩ F
1 5.0
IC = 10μAdc, VCE = 5Vdc, f = 1.0kHz, RG = 10kΩ F
2 3.0
IC = 10μAdc, VCE = 5Vdc, f = 10kHz, RG = 10kΩ F
3 3.0
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0202 Rev. 1 (110638) Page 3 of 4
PACKAGE DIMENSIONS
NOTES:
1 Dimensions are in inches.
2 Millimeters are given for general information only.
3 Tab Shown omitted.
4 Lead number 4 and 8 omitted on this variation.
5 Beyond r maximum, TW shall be held to a minimum length of .21 inch (5.33 mm)
6 TL shall be measured from maximum CD.
7 Details of outline in this zone are optional.
8 CD1 shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
9 Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of
true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by
direct methods or by the gauge and gauging procedures described on gauge drawing GS-1.
10 LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
11 For transistor types 2N2919 and 2N2920, LL is .500 inch (12.70 mm) minimum and .750 inch (19.05 mm) maximum.
12 For transistor type 2N2919L and 2N2920L, LL is 1.500 inches (38.10 mm) minimum and 1.750 inches (44.45 mm)
maximum.
13 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions 2N2919, 2N2919L, 2N2920, and 2N2920L (TO-78).
DIMENSIONS
Symbol Inches Millimeters Notes
Min Max Min Max
CD .335 .370 8.51 9.40
CD1 .305 .335 7.75 8.51
CH .140 .260 3.56 6.60
HT .009 .041 0.23 1.04
LC .140 .160 3.56 4.06
LC1 .200 TP 5.08 TP 9
LD .016 .021 .041 0.53 10
LL See notes 10, 11 and 12
LU .016 .019 .041 0.48 10
L1 .050 1.27 10
L2 .250 6.35 10
P .100 2.54 8
Q .050 1.27 7
TL .029 .045 0.74 1.14 5, 6
TW .028 .034 0.71 0.86 4, 5
r .010 0.25
α 45°TP 45°TP 9
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0202 Rev. 1 (110638) Page 4 of 4
Symbol
Dimensions
Inches Millimeters
Min Max Min Max
BL .240 .250 6.10 6.35
BL2 .250 6.35
BW .165 .175 4.19 4.44
BW2 .175 4.44
CH .044 .080 1.12 2.03
LH .026 .039 0.66 0.99
LL1 .060 .070 1.52 1.78
LL2 .082 .098 2.08 2.49
LS1 .095 .105 2.41 2.67
LS2 .045 .055 1.14 1.39
LW .022 .028 0.56 0.71
NOTES:
1 Dimensions are in inches.
2 Millimeters are given for general information only.
3 In accordance with AMSE Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions (2N2919U and 2N2920U) Surface mount.
Pin no. Transistor
1 Collector no. 1
2 Base no. 1
3 Base no. 2
4 Collector no. 2
5 Emitter no. 2
6 Emitter no. 1
